Cree® UltraThin™ LED Data Sheet CxxxUT200-Sxxxx Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES APPLICATIONS • Small Chip – 200 x 200 x 85 μm • Mobile Phone Keypads • UT LED Performance • Audio Product Display Lighting – • Mobile Appliance Keypads • Automotive Applications • 5.5 mW min. (455–475 nm) Blue Low Forward Voltage – 2.9 V Typical at 5 mA • Single Wire Bond Structure • Class 2 ESD Rating CxxxUT200-Sxxxx Chip Diagram .CPR3DE Rev Data Sheet: Top View Bottom View G•SiC LED Chip 200 x 200 μm Die Cross Section SiC Substrate Bottom Surface 115 x 115 μm Mesa (junction) 150 x 150 μm Gold Bond Pad 90 μm Diameter InGaN Anode (+) SiC Substrate h = 85 μm Backside Metallization 80 x 80 μm Subject to change without notice. www.cree.com Cathode (-) Maximum Ratings at TA = 25°C Notes 1&3 CxxxUT200-Sxxxx DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range Electrostatic Discharge Threshold (HBM) -40°C to +100°C 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C460UT200-Sxxxx 2.7 2.9 3.1 2 21 C470UT200-Sxxxx 2.7 2.9 3.1 2 22 Mechanical Specifications Description CxxxUT200-Sxxxx Dimension Tolerance P-N Junction Area (μm) 150 x 150 ± 25 Top Area (μm) 200 x 200 ± 25 Bottom Area (Substrate) (μm) 115 x 115 ± 25 85 ± 10 Au Bond Pad Diameter (μm) 90 -5, +15 Au Bond Pad Thickness (μm) 1.2 ± 0.5 80 x 80 ± 25 Chip Thickness (μm) Back Contact Metal Area (μm) Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific application. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3DE Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxUT200-Sxxxx LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT200-Sxxxx) orders may be filled with any or all bins (CxxxUT200-xxxx) contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If = 5 mA. UT-5.5 Radiant Flux Radiant Flux C460UT200-S0550 8.0 mW 8.0 mW C460UT200-0201 5.5 mW 455 nm C460UT200-0202 457.5 nm C460UT200-0203 460 nm Dominant Wavelength C460UT200-0204 462.5 nm 465 nm C470UT200-S0550 C470UT200-0201 5.5 mW 465 nm C470UT200-0202 467.5 nm C470UT200-0203 470 nm Dominant Wavelength C470UT200-0204 472.5 nm 475 nm UT-8.0 Radiant Flux C460UT200-S0800 C460UT200-0205 8.0 mW 455 nm C460UT200-0206 457.5 nm C460UT200-0207 460 nm Dominant Wavelength C460UT200-0208 462.5 nm 465 nm Radiant Flux C470UT200-S0800 C470UT200-0205 8.0 mW 465 nm C470UT200-0206 467.5 nm C470UT200-0207 470 nm Dominant Wavelength C470UT200-0208 472.5 nm Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3DE Rev. - 475 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the UT200 product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current Forward Current vs Forward Voltage 8.0 30 25 4.0 Shift (nm) If (mA) 20 15 10 0.0 -4.0 5 0 0.0 1.0 2.0 3.0 4.0 -8.0 5.0 0 5 10 15 Vf (V) Relative Intensity vs Forward Current 30 100% Relative Intensity (%) 400 % Relative Intensity 25 Relative Intensity vs. Peak Wavelength 450 350 300 250 200 150 100 50 0 80% 60% 40% 20% 0% 0 5 10 15 20 25 30 320 360 400 440 If (mA) Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 20 If (mA) CPR3DE Rev. - 480 520 560 600 640 680 Wavelength (nm) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3DE Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com