AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® POWER MOSFET
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon are. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
Package Type
AUIRFN7107
PQFN 5mm x 6mm
VDSS
75V
RDS(on) max
(@VGS = 10V)
8.5m
QG (typical)
51nC
ID
(@TC (Bottom) = 25°C)
75A
PQFN 5X6 mm
Applications
Injection
Heavy Loads
DC-DC Converter
Base Part Number
AUIRFN7107
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tape and Reel
4000
Complete Part Number
AUIRFN7107TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
VGS
EAS
IAR
TJ
TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Operating Junction and
Storage Temperature Range
Max.
75
14
12
75
53
300
4.4
125
0.029
± 20
123
45
-55 to + 175
Units
V
A
W
W/°C
V
mJ
A
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFN7107
Thermal Resistance
Symbol
Parameter
RJC (Bottom)
Junction-to-Case
Typ.
–––
Max.
1.2
RJC (Top)
Junction-to-Case
–––
27
RJA
Junction-to-Ambient
–––
34
RJA (<10s)
Junction-to-Ambient
–––
22
Units
°C/W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V VGS = 0V, ID = 250µA
––– 0.074 ––– V/°C Reference to 25°C, ID = 1.0mA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
6.9
8.5
RDS(on)
Static Drain-to-Source On-Resistance
m VGS = 10V, ID = 45A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V VDS = VGS, ID = 100µA
Internal Gate Resistance
––– 0.82 –––
RG
gfs
Forward Transconductance
73
–––
–––
S VDS = 25V, ID = 45A
–––
–––
20
VDS = 75V, VGS = 0V
Drain-to-Source Leakage Current
µA
IDSS
–––
–––
250
VDS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
nA
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
–––
51
77
ID = 45A
VDS = 38V
Gate-to-Source Charge
–––
15
–––
Qgs
nC
VGS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
14
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
37
–––
ID = 45A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
–––
8.0
–––
VDD = 75V
ID = 45A
Rise Time
–––
12
–––
tr
ns
td(off)
Turn-Off Delay Time
–––
19
–––
RG = 1.8
VGS = 10V
Fall Time
–––
7.0
–––
tf
Ciss
Input Capacitance
––– 3001 –––
VGS = 0V
Output Capacitance
–––
371
–––
Coss
pF VDS = 25V
ƒ = 1.0 MHz
Crss
Reverse Transfer Capacitance
–––
151
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
MOSFET symbol
–––
–––
75
A
IS
(Body Diode)
showing the
integral reverse
Pulsed Source Current
–––
–––
A
300
ISM
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
––– 0.85
1.3
V TJ = 25°C, IS = 45A, VGS = 0V
–––
28
–––
trr
Reverse Recovery Time
ns TJ = 25°C, IF = 45A, VDD = 38V
–––
145
–––
Qrr
Reverse Recovery Charge
nC di/dt = 500A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L =0.12mH, RG = 50, IAS = 45A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
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AUIRFN7107
1000
1000
100
BOTTOM
100
10
1
VGS
15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
4.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
5.5V
4.8V
4.5V
4.3V
4.0V
4.0V
60µs PULSE WIDTH
BOTTOM
4.0V
10
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig. 2 Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
60µs PULSE WIDTH
ID = 75A
V GS = 10V
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
8
TJ , Junction Temperature (°C)
V GS, Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
100000
14.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
V GS, Gate-to-Source Voltage (V)
ID= 45A
Coss = Cds + Cgd
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
10000
Ciss
Coss
1000
Crss
12.0
V DS= 60V
V DS= 38V
10.0
V DS= 15V
8.0
6.0
4.0
2.0
0.0
100
1
10
100
0
10
20
30
40
50
60
70
V DS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFN7107
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
TJ = 175°C
10
TJ = 25°C
1
100µsec
100
1msec
10
10msec
1
0.1
V GS = 0V
0.1
OPERATION IN THIS AREA
LIMITED BY RDS(on)
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
V SD, Source-to-Drain Voltage (V)
10
100
V DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
80
4.5
V GS(th) , Gate threshold Voltage (V)
70
60
ID, Drain Current (A)
1
50
40
30
20
10
0
4.0
3.5
3.0
2.5
ID = 100µA
ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
1.5
1.0
25
50
75
100
125
150
175
-75 -50 -25
TC , Case Temperature (°C)
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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20
500
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m )
AUIRFN7107
ID = 45A
18
16
TJ = 125°C
14
12
10
TJ = 25°C
8
6
400
300
200
100
0
4
6
8
10
12
14
16
18
20
V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
Fig 14a. Unclamped Inductive Test Circuit
Fig 15a. Switching Time Test Circuit
5
ID
TOP
6.5A
14A
BOTTOM 45A
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
2015-10-12
AUIRFN7107
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 17a. Gate Charge Test Circuit
6
Fig 17b. Gate Charge Waveform
2015-10-12
AUIRFN7107
PQFN 5x6 Outline "E" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application
note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFN7107
PQFN 5x6 Outline "E" Tape and Reel
NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFN7107
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
Human Body Model
PQFN 5x6
MSL1
Class H1C (+/- 2000V)†
AEC-Q101-001
ESD
Charged Device Model
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
RoHS Compliant
† Highest passing voltage.
Revision History
Date
10/12/2015
Comments
Updated datasheet with corporate template
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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