JDS EPM605-250 C-band, l-band, pass band low leakage pin photodiode Datasheet

COMMUNICATIONS COMPONENTS
C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes
EPM 6xx Series
Key Features
• Electro-optical
- Low back reflection
- High responsivity in L-band at 1625 nm (EPM 606)
• Packaging
- Single mode 900 µm fiber with or without a connector
- Single mode 250 µm fiber without a connector
- Small form factor (SFF) package available
Applications
• C- and L-Band monitoring
• High sensitivity monitoring
• EDFA and DWDM
• 40 and 10 Gb/s line monitoring
• 980 forward pump
• 1310 and 1550 PONs
The JDSU EPM 6xx Series PIN photodiodes are designed for optical network
monitoring applications. The photodiode die is fabricated with a proprietary
InGaAs process in our wafer fab and assembled into an hermetically-sealed
package with antireflective-coated lens. A stainless steel bushing is used to actively
couple the fiber to the package.
The fiber is reinforced with a rubber boot, which relieves fiber bending stresses.
EPM 6xx Series photodiodes can be produced with or without a variety of
industry standard connectors. They are also available with mounting brackets,
allowing both vertical panel and horizontal flush-to-board mounting.
Low leakage versions (EPM 605LL and EPM 606LL) of the EPM 605 and EPM 606
are available with the same features, connectors, and brackets.
Besides, we also offer the small form factor (SFF) packages (EPM635 and
EPM635-75) that are designed for the SFF applications.
NORTH AMERICA : 800 498-JDSU (5378)
WORLDWIDE : +800 5378-JDSU
WEBSITE : www.jdsu.com
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
2
Application Preference
Application/Product
C-band
C-band, high sensitivity
L-band
L-band, low sensitivity
1310 band
EDFA
DWDM
40 Gb and 10 Gb line monitors
980 forward pump
1310/1550 PON networks
1480 pump monitors
••
•
Strong Preference
EPM 605
EPM 605LL
EPM 606
EPM 606LL
••
••
••
•
•
•
••
••
••
•
••
••
••
•
•
•
•
••
••
••
•
•
•
EPM 613
EPM 650
•
••
••
••
••
•
•
•
••
••
••
•
•
•
••
•
•
•
••
••
•
•
Preference
Typical Spectral Response (23°C)
Dark Current vs. Reverse Bias
1E-07
1.0
1E-08
Dark Current (A)
Responsivity (A/W)
0.8
0.6
0.4
1E-09
85˚C
1E-10
65˚C
0.2
45˚C
25˚C
0.0
1E-11
800
1000
1200
1400
Wavelength (nm)
1600
1800
0
5
10
15
Reverse Voltage (V)
20
25
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
3
Capacitance vs. Reverse Bias (23 °C) (EPM 605/606)
1.4
6%
1.2
4%
2%
Nonlinearity (%)
1.0
Capacitance (pF)
Optical Response Nonlinearity (Typical, -5 V bias)
0.8
0.6
0%
-2%
-4%
0.4
-6%
0.2
-8%
-10%
0.0
0
2
4
6
8
10
0.1
0.01
12
100
10
Responsivity vs. Temperature (EPM 613)
PDL vs. Temperature (EPM 613)
0.12
0.7
0.1
0.66
Responsivity (A/W)
PDL (dB)
1
Input Optical Power (mW)
Reverse Voltage (V)
0.08
0.06
EPM 613
0.58
EPM 613 Device 1
Power = 1 mW
0.54
EPM 613
0.04
0.62
λ = 980 nm
Bias = -5V
EPM 613 Device 2
λ = 980 nm
EPM 613 Device 3
0.5
0.02
20
25
30
35
40
45
50
0
65
60
55
10
20
30
40
50
60
70
90
80
Temperature (˚C)
Temperature (˚C)
Responsivity vs. Temperature (EPM 606)
PDL vs. Temperature (EPM 606)
1.2
0.08
1
Responsivity (A/W)
PDL (mdB)
p
0.1
0.06
0.04
Sample 1
Sample 2
0.02
0.8
Sample 1
0.6
Sample 2
Sample 3
0.4
λ = 1620 nm
Sample 4
λ = 1620 nm, Vb = -5V, Pin = 0.5 mW
0
0.2
0
10
20
30
40
Temperature (˚C)
50
60
70
-40
-20
0
20
40
Temperature (˚C)
60
80
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
4
Responsivity vs. Wavelength, Temperature (EPM 605)
PDL vs. Wavelength, Temperature (EPM 605)
1
0.1
0.99
0.09
0.97
PDL (dB)
Responsivity (A/W)
0.095
0.98
0.96
0.95
0.085
0.08
15˚C
0.94
0.075
15˚C
23˚C
0.07
23˚C
65˚C
0.93
65˚C
0.065
0.92
1525
1530
1535
1540
1545
1550
1555
1560
0.06
1565
1535
1540
1545
Wavelength (nm)
1550
1555
1560
1565
Wavelength (nm)
Responsivity vs. Temperature (EPM 605)
PDL vs. Temperature (EPM 605)
0.08
1
0.07
0.96
Responsivity (A/W)
PDL (dB)
0.06
0.05
0.04
0.03
EPM 605 (1310 nm)
0.02
λ = 1550 nm
EPM 605 (1310 nm)
λ = 1310 nm
EPM 605 (1550 nm)
0.92
Sample 5
0.88
Sample 6
Sample 7
0.84
EPM 605 (1550 nm)
0.01
λ = 1550 nm, Vb = -5V, Pin = 0.5 mW
0.8
0
20
25
30
35
40
45
50
55
60
65
70
-40
-20
0
Temperature (˚C)
20
40
60
80
Temperature (˚C)
Optical Power Linearity (EPM 650)
Optical Power Linearity (EPM 605)
1.10
1.10
λop = 1550 nm
1.06
1.00
Responsivity (A/W)
Responsivity (A/W)
1.02
0.98
0.94
0.90
0.86
Bias = -5.0V
0.82
Bias = -3.3V
0.78
λop = 1550 nm
0.90
0.80
0.70
Bias = -5.0V
0.60
Bias = -3.3V
Bias = 0.0V
Bias = 0.0V
0.50
Responsivity = 1.02 A/W
0.74
Responsivity = 1.02 A/W
0.40
0.70
0
2
4
6
8
10
12
14
Optical Power (mW)
16
18
20
0
2
4
6
8
Optical Power (mW)
10
12
14
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
5
Equivalent Circuit for EPM 6xx Series
Rs
1.5 nH
5 nH
0.50 pF
Cp
CASE
0.13 pF
0.50 pF
1 nH
Dimensions Diagram
EPM 6xx with Dual Mount Bracket
5 nH
Model
Rs
Cp
EPM 605
EPM 606
EPM 613
EPM 650
EPM 635
EPM 635-75
5Ω
5Ω
5Ω
6Ω
5Ω
5Ω
0.55 pF
0.55 pF
0.75 pF
1.00 pF
6.00 pF
0.90 pF
(Specifications in mm unless otherwise noted.)
EPM 6xx without Dual Mount Bracket
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
6
Dimensions Diagram
(Specifications in mm unless otherwise noted.)
EPM 635
Specifications
EPM 635-75
(Temperature = 25°C, V PD = -5 V and wavelength = 1550 nm, unless otherwise noted.)
Parameter
Active diameter
Responsivity
Back reflection
Dark current
Capacitance1
Bandwidth1,2
Maximum Ratings
Forward current
Reverse current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Typical
Minimum
Minimum
Maximum
Typical
Maximum
Typical
Maximum
Maximum
Maximum
Maximum
1. Measured with leads trimmed or referenced to 3 mm length maximum.
2. -3 dB point into a 50 Ω load.
EPM 635
EPM 635-75
300 µm
0.85 A/W
-40 dB
0.6 nA
6.0 pF
7.0 pF
300 MHz
75 µm
0.85 A/W
-40 dB
0.08 nA
0.9 pF
1.4 pF
2000 MHz
10 mA
10 mA
25 V
100 mW
-40 to 85 °C
-40 to 85 °C
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
7
Specifications
Parameter
Active diameter
Responsivity
λ = 980 nm
λ = 1310 nm
λ = 1550 nm
λ = 1625 nm
Back reflection
λ = 980 nm
λ = 1310 nm
λ = 1550 nm
λ = 1625 nm
Dark current
Standard leakage
Low leakage
Capacitance1
Bandwidth2
PDL
λ = 980 nm
λ = 1310 nm
λ = 1550 nm
λ = 1625 nm
Isolation between bands
1310 and 1550 nm
980 and 1550 nm
Maximum Ratings
Forward current3
Reverse current4
Reverse voltage
Power dissipation
Operating case temperature
Soldering temperature
Storage temperature
EPM 605
EPM 606
EPM 613
EPM 650
Typical
75 µm
75 µm
75 µm
100 µm
Minimum
Minimum
Minimum
Minimum
0.80 A/W
0.85 A/W
-
0.85 A/W
0.80 A/W
0.30 A/W
0.85 A/W
0.0004 A/W
-
0.80 A/W
0.85 A/W
-
Minimum
Minimum
Minimum
Minimum
-40 dB
-
-40 dB
-30 dB
-40 dB
-
-27 dB
-
Maximum
Maximum
Maximum
Typical
0.6 nA
0.08 nA
0.75 pF
2.0 GHz
0.6 nA
0.08 nA
0.75 pF
2.0 GHz
1.0 nA
0.9 pF
1.5 GHz
1.0 nA
1.25 pF
1.5 GHz
Typical
Typical
Typical
Typical
0.1 dB
0.1 dB
-
0.1 dB
0.1 dB
0.2 dB
-
0.1 dB
-
Typical
Typical
-
-
33 dB
29 dB
-
Maximum
Maximum
Maximum
Maximum
Maximum
1. Measured with case grounded.
2. -3 dB point into a 50 Ω load.
3. Under forward bias, current at which device may be damaged.
4. Under reverse bias, current at which device may be damaged.
10 mA
10 mA
25 V
100 mW
-40 to 85 °C
250 °C
-40 to 85 °C
C-BAND, L-BAND, PASS BAND
LOW LEAKAGE PIN PHOTODIODES
Ordering Information
For more information on this or other products and their availability, please contact your local JDSU account manager or
JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at
[email protected]
Sample: EPM 606LL-250
+
EPM 6 +
Code
05
05LL
06
06LL
13
50
35
35-75
Model
Low back reflection, C-band PIN photodiode
Low back reflection, low leakage, C-band PIN photodiode
Low back reflection, L-band PIN photodiode
Low back reflection, low leakage, L-band PIN photodiode
Low back reflection, Pass-band PIN photodiode
General purpose, high responsivity PIN photodiode
SFF package with 300 µm detection window
SFF package with 75 µm detection window
Code
-250
+
Buffer
250 µm buffer
900 µm buffer
+
Code
W/DM BKT
Bracket
No bracket
With dual mount bracket
Code
Connector
No connector
FC/APC FC/APC connector
FC/SPC FC/SPC connector
SC/SPC SC/SPC connector
Precautions for Use
Electrostatic discharge protection is imperative. Use of grounding straps, anti-static mats, and other standard ESD protective
equipment is required when handling or testing an InGaAs PIN or any other junction photodiode. The flexible 250 µm fiber
coating can be mechanically stripped and provides protection for the optical fiber, under normal handling characteristics.
Soldering temperature of the leads should not exceed 260 °C for more than 10 seconds. Fiber pigtails should be handled with
less than 10 N pull and with a bending radius greater than 1 inch.
All statements, technical information and recommendations related to the products herein are based upon information believed to be
reliable or accurate. However, the accuracy or completeness thereof is not guaranteed, and no responsibility is assumed for any
inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. JDSU reserves
the right to change at any time without notice the design, specifications, function, fit or form of its products described herein, including
withdrawal at any time of a product offered for sale herein. JDSU makes no representations that the products
herein are free from any intellectual property claims of others. Please contact JDSU for more information. JDSU and the JDSU logo are
trademarks of JDS Uniphase Corporation. Other trademarks are the property of their respective holders. ©2006 JDS Uniphase
Corporation. All rights reserved. 10143020 Rev. 004 03/06 EPM6XX.DS.CC.AE
NORTH AMERICA : 800 498-JDSU (5378)
WORLDWIDE : +800 5378-JDSU
WEBSITE : www.jdsu.com
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