MOSFET SMD Type P-Channel MOSFET AO3401A-HF (KO3401A-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 ● ID =-4 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) =-30V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● RDS(ON) ＜ 60mΩ (VGS =-4.5V) +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● RDS(ON) ＜ 85mΩ (VGS =-2.5V) Pb−Free Lead Finish 0-0.1 D +0.1 0.38 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA Unit V -4 -3.2 A -27 1.4 0.9 W 90 125 RthJL 80 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO3401A-HF (KO3401A-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage Test Conditions ID=-250μA, VGS=0V Min Typ VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS ID=-250μA On state drain current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=-10V, ID=-4A -0.5 VGS=-2.5V, ID=-2.5A 85 VGS=-10V, VDS=-5V -27 VDS=-5V, ID=-4A VGS=0V, VDS=-15V, f=1MHz 4 12 VGS=-10V, VDS=-15V, ID=-4A 7 6.5 Turn-Off DelayTime td(off) VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω Marking X1** F www.kexin.com.cn 3.5 ns 41 9 IF=-4A, dI/dt=100A/μs IS=-1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking nC 1.5 tr VSD Ω 14 td(on) IS pF 55 VGS=0V, VDS=0V, f=1MHz Turn-On Rise Time Qrr S 80 Turn-On DelayTime Diode Forward Voltage 2 17 645 2.5 Maximum Body-Diode Continuous Current mΩ A Qgd Body Diode Reverse Recovery Charge V 60 Gate Drain Charge trr nA -1.3 VGS=-4.5V, ID=-3.5A Qgs Body Diode Reverse Recovery Time ±100 75 TJ=125℃ Gate Source Charge tf uA 50 Qg Turn-Off Fall Time Unit V VGS=-10V, ID=-4A Static Drain-Source On-Resistance Max -30 11 3.5 nC -2 A -1 V MOSFET SMD Type P-Channel MOSFET AO3401A-HF (KO3401A-HF) ■ Typical Characterisitics 25 20 10V VDS=-5V 4.5V 15 15 -ID(A) -ID (A) 20 -2.5V 10 10 5 5 VGS=-2.0V 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 100 Normalized On-Resistance 1.8 80 RDS(ON) (mΩ ) 25°C 125°C VGS=-2.5V 60 VGS=-4.5V 40 VGS=-10V VGS=-10V ID=-4A 1.6 1.4 VGS=-4.5V 17 ID=-3.5A 5 1.2 VGS=-2.5V ID=-2.5A 1 0.8 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 150 1.0E+01 130 1.0E+00 110 1.0E-01 90 IS (A) RDS(ON) (mΩ ) ID=-4A 125°C 1.0E-02 125°C 1.0E-03 70 50 25°C 1.0E-04 25°C 1.0E-05 30 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO3401A-HF (KO3401A-HF) ■ Typical Characterisitic 10 800 Capacitance (pF) 8 -VGS (Volts) 1000 VDS=-15V ID=-4A 6 4 600 400 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 15 Coss Crss 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 10µs -ID (Amps) RDS(ON) limited 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 1000 Power (W) 10.0 10 10s DC 0.0 0.01 0.1 1 10 1 100 0.00001 -VDS (Volts) . Figure 9: Maximum Forward Biased Safe Operating Area Zθ JA Normalized Transient Thermal Resistance 10 1 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 www.kexin.com.cn 10 100 1000