polyfet rf devices F1007 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 20 Watts Gemini Package Style AK TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 100 Watts 1.75 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 4 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 20WATTS OUTPUT ) MAX 13 60 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz % Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz Relative Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER Bvdss Drain Breakdown Voltag Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat MIN TYP MAX 65 1 UNITS TEST CONDITIONS V Ids = 0.05 A, Vgs = 0V 1 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.1 A, Vgs = Vds 0.8 Mho Vds = 10V, Vgs = 5V 1 Ohm Vgs = 20V, Ids = 4 A Saturation Curren 5.5 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 33 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 4 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1007 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1007 POUT vs PIN Idq=0.4A F=400 Mhz Vds=28v F1B 1 DIE Capacitance vs Vds 45 14.5 40 14 35 13.5 30 13 25 12.5 20 12 100 Coss 15 Ciss 10 11.5 Crss Efficiency = 50% 10 11 5 10.5 0 10 0 0.5 1 1.5 2 2.5 3 3.5 4 1 Pin in Watts 0 POUT 5 10 PIN 15 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1B 1DIE IV CURVE F1B 1 DIE GM & ID vs VG 6 10 Id 5 4 1 3 2 Gm 0.1 1 0 0 2 4 6 8 10 12 14 16 18 20 0.01 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com