AUTOMOTIVE GRADE
PD - 97718A
AUIRLS3036
HEXFET® Power MOSFET
Features
●
●
●
●
●
●
●
●
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
D
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
60V
1.9m
2.4m
270A
195A
c
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
D
S
D2Pak
AUIRLS3036
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
Max.
270
190
195
1100
380
2.5
±16
290
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
d
f
l
e
A
W
See Fig. 14, 15, 22a, 22b
8.0
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
dv/dt
TJ
TSTG
Units
c
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
W/°C
V
mJ
A
mJ
V/ns
-55 to + 175
°C
300
Thermal Resistance
Symbol
RJC
RJA
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
–––
–––
0.40
40
°C/W
k
11
j
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/05/11
AUIRLS3036
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
RG(int)
IDSS
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60
–––
–––
–––
1.0
340
–––
–––
–––
–––
–––
Conditions
––– –––
V VGS = 0V, ID = 250μA
0.061 ––– V/°C Reference to 25°C, ID = 5mA
1.9
2.4
VGS = 10V, ID = 165A
m
VGS = 4.5V, ID = 140A
2.2
2.8
–––
2.5
V VDS = VGS, ID = 250μA
––– –––
S VDS = 10V, ID = 165A
2.0
–––
–––
20
VDS = 60V, VGS = 0V
μA
––– 250
VDS = 60V, VGS = 0V, TJ = 125°C
V
––– 100
GS = 16V
nA
––– -100
VGS = -16V
g
g
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
91
140
–––
31
–––
–––
51
–––
–––
40
–––
–––
66
–––
––– 220 –––
––– 110 –––
––– 110 –––
––– 11210 –––
––– 1020 –––
––– 500 –––
––– 1430 –––
––– 1880 –––
Conditions
ID = 165A
VDS = 30V
nC
VGS = 4.5V
ID = 165A, VDS =0V, VGS = 4.5V
VDD = 39V
ID = 165A
ns
RG = 2.1
VGS = 4.5V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
VGS = 0V, VDS = 0V to 48V
g
g
i
h
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
e
Min. Typ. Max. Units
–––
–––
–––
–––
270
c
1100
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 165A, VGS = 0V
TJ = 25°C
VR = 51V,
TJ = 125°C
IF = 165A
di/dt = 100A/μs
TJ = 25°C
g
S
––– –––
1.3
V
–––
62
–––
ns
–––
66
–––
––– 310 –––
nC
TJ = 125°C
––– 360 –––
–––
4.4
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.021mH
RG = 25, IAS = 165A, VGS =10V. Part not recommended for use
above this value .
ISD 165A, di/dt 430A/μs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400μs; duty cycle 2%.
2
Coss eff. (TR) is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
R is measured at TJ approximately 90°C.
Limited by TJmax, see Fig. 14, 15, 22a, 22b for typical repetitive
avalanche performance.
R JC value shown is at time zero.
11
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AUIRLS3036
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
D2Pak
MSL1
Class M4 (+/- 800V)†††
AEC-Q101-002
ESD
Human Body Model
Class H3A (+/- 6000V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRLS3036
1000
1000
100
BOTTOM
BOTTOM
100
10
2.7V
1
2.7V
60μs PULSE WIDTH
60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
0.1
0.1
1
10
100
0.1
1000
Fig 1. Typical Output Characteristics
100
1000
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
100
10
T J = 25°C
1
VDS = 25V
60μs PULSE WIDTH
0.1
ID = 165A
VGS = 10V
2.0
1.5
1.0
0.5
1
2
3
4
5
6
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
5.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 165A
C oss = C ds + C gd
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Ciss
10000
Coss
1000
Crss
4.0
VDS= 48V
VDS= 30V
3.0
2.0
1.0
0.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRLS3036
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
1msec
100
Limited by
package
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
0.1
0.0
0.5
1.0
1.5
2.0
0
2.5
Limited By Package
ID, Drain Current (A)
200
150
100
50
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
300
25
10
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
250
1
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
75
Id = 5mA
70
65
60
55
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
3.0
EAS , Single Pulse Avalanche Energy (mJ)
1200
2.5
ID
27A
50A
BOTTOM 165A
TOP
1000
2.0
Energy (μJ)
DC
1.5
1.0
0.5
0.0
800
600
400
200
0
-10
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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70
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRLS3036
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
J
0.05
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
4
4
Ci= iRi
Ci iRi
0.01
1E-005
0.01115
0.000009
0.08360
0.000080
0.18950
0.001295
0.11519
0.006726
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W) i (sec)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
300
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 165A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRLS3036
14
2.5
2.0
ID = 250μA
ID = 1.0mA
1.5
12
IF = 110A
V R = 51V
10
TJ = 25°C
TJ = 125°C
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
3.0
8
ID = 1.0A
6
1.0
4
0.5
2
-75 -50 -25 0
25 50 75 100 125 150 175 200
0
100
T J , Temperature ( °C )
300
400
500
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
900
12
IF = 165A
V R = 51V
10
IF = 110A
V R = 51V
800
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
700
600
8
QRR (A)
IRRM (A)
200
diF /dt (A/μs)
6
500
400
300
4
200
2
100
0
100
200
300
400
500
0
100
200
300
400
500
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
600
IF = 165A
V R = 51V
TJ = 25°C
TJ = 125°C
QRR (A)
500
400
300
200
0
100
200
300
400
500
diF /dt (A/μs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRLS3036
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- VDD
V10V
GS
10%
VGS
Pulse Width µs
Duty Factor
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50K
12V
tf
.2F
.3F
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRLS3036
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AULS3036
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
AUIRLS3036
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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AUIRLS3036
Ordering Information
Base part number
AUIRLS3036
www.irf.com
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
800
800
AUIRLS3036
AUIRLS3036TRL
AUIRLS3036TRR
11
AUIRLS3036
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
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any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
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12
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