MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE CM1400DU-24NF ● IC ................................................................ 1400A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N 150 137.5±0.25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 34.6 +1.0 –0.5 4 E1 PPS 10.5 E2 E2 18 15.7 5.5 C1 L A B E L 34.6 +1.0 –0.5 E2 G2 1.9 ±0.2 14 14 14 14 14 14 42 42 25.1 9-M6 NUTS 12 C2 C2E1 E2 C1 C1 G1 E1 8-f6.5 MOUNTING HOLES G1 G2 B 129.5 166 C1 C2E1 C2 A 21 11 19 38±0.25 42.5±0.25 38±0.25 74±0.25 74±0.25 15.7 Tc measured point (The side of Cu base plate) CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature*4 Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC’ = 94°C*1 Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 1400 2800 1400 2800 3900 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions VCE = VCES, VGE = 0V ICES Collector cutoff current VGE(th) Gate-emitter threshold voltage IC = 140mA, VCE = 10V IGES Gate leakage current VCE(sat) (chip) Collector-emitter saturation voltage (without lead resistance) R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge VEC(Note 1) (chip) Emitter-collector voltage (without lead resistance) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Thermal resistance*3 Contact thermal resistance*2 Thermal resistance*1 ±VGE = VGES, VCE = 0V IC = 1400A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C Ic = 1400A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 1400A, VGE = 15V VCC = 600V, IC = 1400A VGE = ±15V RG = 0.22Ω, Inductive load IE = 1400A IE = 1400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under the chips (IGBT part) Case temperature measured point is just under the chips (FWDi part) External gate resistance Min. — Limits Typ. — Max. 1 6 7 8 V — — — — — — — — — — — — — — — 1.8 2.0 0.286 — — — 7200 — — — — — 90 1.5 2.5 — — 220 25 4.7 — 800 300 1000 300 700 — µA — — 3.2 — — — — — 0.22 — — 0.016 — — — 0.032 0.053 — 0.014 0.023 2.2 Unit mA V mΩ nF nC ns ns µC V K/W Ω Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *4 : The operation temperature is restrained by the permission temperature of female connector. Feb. 2009 2 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES VGE = 20V 12V 1500 11V 1000 10V 500 8V 0 2 VCE = 10V 2500 2000 0 4 6 2000 1500 1000 500 Tj = 25°C Tj = 125°C 9V 8 0 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 10 VGE = 15V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C 13V 15V COLLECTOR CURRENT (A) 2500 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 104 500 1000 1500 2000 2500 2800 6 IC = 1400A 4 IC = 2800A 2 IC = 560A 0 6 8 10 12 14 16 18 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 3 2 103 7 5 3 2 Tj = 25°C Tj = 125°C 0 8 GATE-EMITTER VOLTAGE VGE (V) 7 5 102 Tj = 25°C COLLECTOR CURRENT IC (A) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 2800 EMITTER CURRENT IE (A) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1 2 3 4 7 5 3 2 20 Cies 102 7 5 3 2 Coes 101 7 5 3 2 Cres VGE = 0V 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) 104 7 5 3 2 103 td(off) td(on) 7 5 3 2 tf Conditions: VCC = 600V VGE = ±15V RG = 0.22Ω Tj = 125°C Inductive load 102 7 5 3 tr 2 101 2 10 2 3 5 7 103 2 3 5 7 104 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 Irr 7 5 trr 3 2 102 7 5 3 2 101 2 10 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 3 2 10–1 7 5 3 2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 TC measured 3 point is just 2 under the chips 7 5 3 2 5 7 104 3 16 VCC = 400V VCC = 600V 12 8 4 0 2000 4000 6000 8000 TIME (s) GATE CHARGE QG (nC) IC-ESW (TYPICAL) RG-ESW (TYPICAL) 10000 103 7 5 7 5 3 2 Eon, Eoff, Err (mJ/pulse) Eon, Eoff, Err (mJ/pulse) 2 IC = 1400A 0 103 102 7 5 5 7 103 20 7 5 3 2 7 5 3 2 3 GATE CHARGE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 10–1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) Single Pulse IGBT part: Per unit base = Rth(j–c’) = 0.014K/ W FWDi part: Per unit base = Rth(j–c’) = 0.023K/ W 100 7 5 3 2 Conditions: VCC = 600V VGE = ±15V RG = 0.22Ω Tj = 125°C Inductive load Err 3 2 Eoff Eon Conditions: VCC = 600V VGE = ±15V Tj = 125°C RG = 0.22Ω Inductive load 101 7 5 3 2 100 2 10 2 3 5 7 103 2 3 Eon 3 2 Eoff 102 Err 7 5 Conditions: VCC = 600V VGE = ±15V Tj = 125°C IC = 1400A Inductive load 3 2 101 5 7 104 0 0.5 1 1.5 2 2.5 RG (Ω) IC (A) Feb. 2009 4