MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HG-130H ● IC .................................................................. 600 A ● VCES ...................................................... 6500 V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 190 ±0.5 57 ±0.25 5-M8 NUTS 57 ±0.25 17 ±0.1 57 ±0.25 5 3 1 G (2) C C E (5) E (3) E (1) G E 9 ±0.1 E (4) C C 140 ±0.5 2 124 ±0.25 4 44 ±0.3 6 (6) C CIRCUIT DIAGRAM 8-φ7 MOUNTING HOLES screwing depth min. 16.5 41 ±0.5 22 ±0.3 LABEL +1.0 0 5 ±0.15 18 ±0.3 40.4 ±0.3 61.2 ±0.5 12 ±0.3 38 61.2 ±0.5 screwing depth min. 7.7 59.2 ±0.5 +1.0 0 14 ±0.3 48 3-M4 NUTS HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 1 MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item Tj = –40°C Tj = +25°C Tj = +125°C VCES Collector-emitter voltage VGE = 0V VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Gate-emitter voltage VCE = 0V, Tj = 25°C DC, Tc = 80°C Pulse DC Pulse Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Collector current Emitter current Ratings 5800 6300 6500 ± 20 600 1200 600 1200 8900 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 10 Conditions (Note 2) (Note 1) (Note 1) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC = 4500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C Unit V V A A A A W V V °C °C °C µs ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres Qg Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) VCE = 10 V, IC = 60 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE(sat) td(on) tr Eon(10%) td(off) tf tf2 Eoff(10%) VEC trr trr2 Qrr Erec(10%) VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C VCC = 3600 V, IC = 600 A, VGE = ±15 V, Tj = 25°C IC = 600 A (Note 4) Tj = 25°C VGE = 15 V Tj = 125°C VCC = 3600 V, IC = 600 A, VGE = ±15 V RG(on) = 10 Ω, Tj = 125°C, Ls = 150 nH t(IGBT_off) = 60 µs(Note 6), Inductive load VCC = 3600 V, IC = 600 A, VGE = ±15 V RG(off) = 33 Ω, Tj = 125°C, Ls = 150 nH Inductive load IE = 600 A VGE = 0 V (Note 4) VCC = 3600 V, IE = 600 A, VGE = ±15 V RG(on) = 10 Ω, Tj = 125°C, Ls = 150 nH t(IGBT_off) = 60 µs(Note 6), Inductive load Tj = 25°C Tj = 125°C Min — — 5.0 –0.5 — — — — — — — — Limits Typ — 30 6.0 — 124 7.6 2.2 9.9 4.50 4.60 1.20 0.35 Max 10 90 7.0 0.5 — — — — — — — — — 4.50 — J/P — — 8.20 0.50 3.10 — — — µs µs µs — 4.30 — J/P — — 4.00 3.60 — — V — 1.00 — µs 2.40 — µs — 1100 — µC — 2.00 — J/P Unit mA V µA nF nF nF µC V µs µs HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 2 MITSUBISHI HVIGBT MODULES CM600HG-130H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm Min — — — Limits Typ — — 6.0 Max 14.0 22.0 — Min 7.0 3.0 1.0 — 600 26 56 — — Limits Typ — — — 1.35 — — — 17 0.14 Max 15.0 6.0 3.0 — — — — — — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Tc = 25°C Unit N·m N·m N·m kg — mm mm nH mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. t(IGBT_off) definition is shown as follows. Ic time t(IGBT_off) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 3 MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 90%VGE VGE 10%VGE 0 VCC IC 90%IC 90%IC di 10%VCE 10%IC 50%IC 10%IC 10%VCE VCE dt 0 td(on) tr ∫ Eon = ton t1 td(off) t2 tf2 ∫ ic·vce dt t4 Eoff = t1 t2 t3 t4 ic·vce dt t3 tf = (0.9ic–0.1ic)/(di/dt) toff = td(off)+tf Fig. 1 – Definitions of switching times & energies of IGBT part Qrr = – IE(IF) di/dt ∫ VEC(VR) trr di 0 Irr 10%IE Erec = – t6 ∫ ie dt 0 t6 ie·vec dt t5 dt 0 10%VEC trr2 0 t5 t6 Fig. 2 – Definitions of reverse recovery charge & energy of FWDi part HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 4 MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 1200 1200 VCE = 20V Tj = 125°C 1000 VGE = 20V COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) 1000 VGE = 15V 800 VGE = 10V VGE = 12V 600 VGE = 8V 400 200 800 600 400 200 Tj = 25°C Tj = 125°C 0 0 2 4 6 0 8 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 12 1200 1200 VGE = 15V 1000 EMITTER CURRENT (A) COLLECTOR CURRENT (A) 1000 800 600 400 800 600 400 200 200 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 0 0 2 4 6 0 8 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 2 4 6 8 EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 5 MITSUBISHI HVIGBT MODULES CM600HG-130H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 7 5 VCE = 3600V, IC = 600A Tj = 25°C 3 2 15 GATE-EMITTER VOLTAGE (V) Cies CAPACITANCE (nF) 102 7 5 3 2 101 7 5 3 2 Coes 100 Cres 7 5 3 2 2 3 5 7 100 2 3 5 7 101 2 3 5 0 -5 -15 5 7 102 0 5 10 15 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 12 10 VCC = 3600V, VGE = ±15V RG(on) = 10Ω, RG(off) = 33Ω Tj = 125°C, Inductive load Eon 8 6 4 Erec 2 VCC = 3600V, IC = 600A VGE = ±15V, Tj = 125°C Inductive load 10 Eoff SWITCHING ENERGIES (J/P) SWITCHING ENERGIES (J/P) 10 -10 VGE = 0V, Tj = 25°C f = 100kHz 10-1 -1 10 0 HIGH POWER SWITCHING USE INSULATED TYPE 8 Eon 6 Eoff 4 2 0 500 1000 0 1500 Erec 0 20 40 60 80 GATE RESISTOR (Ω) COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 6 MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 102 VCC = 3600V, VGE = ±15V RG(on) = 10Ω, RG(off) = 33Ω Tj = 125°C, Inductive load 7 5 REVERSE RECOVERY TIME (µs) 3 SWITCHING TIMES (µs) 2 101 td(off) 7 5 3 2 tf td(on) 100 104 VCC = 3600V, VGE = ±15V RG(on) = 10Ω, RG(off) = 33Ω Tj = 125°C, Inductive load 7 5 3 3 2 2 lrr 101 103 7 5 7 5 3 3 2 2 trr 100 102 7 5 7 5 3 3 3 2 2 2 7 5 tr 10-1 1 10 2 3 4 5 7 102 2 3 4 5 7 103 10-1 1 10 2 3 4 5 7 104 2 3 4 5 7 102 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 2 3 4 5 7 103 2 3 4 5 7 104 EMITTER CURRENT (A) COLLECTOR CURRENT (A) 1.2 Rth(j–c)Q = 14K/kW Rth(j–c)R = 22K/kW 1.0 n Z th( j –c ) ( t ) = 0.8 0.6 Σ R 1–exp i NORMALIZED TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS – t ti i=1 1 2 3 4 Ri [K/kW] 0.0059 0.0978 0.6571 0.2392 τ i [sec] 0.0002 0.0074 0.0732 0.4488 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 7 MITSUBISHI HVIGBT MODULES CM600HG-130H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1500 15000 VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) ≥ 33Ω COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) ≥ 33Ω 1000 500 0 HIGH POWER SWITCHING USE INSULATED TYPE 0 2000 4000 6000 10000 5000 0 8000 COLLECTOR-EMITTER VOLTAGE (V) 0 2000 4000 6000 8000 COLLECTOR-EMITTER VOLTAGE (V) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) REVERSE RECOVERY CURRENT (A) 1500 VCC ≤ 4500V, di/dt ≤ 3000A/µs Tj = 125°C 1000 500 0 0 2000 4000 6000 8000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 8