Mitsubishi CM800HA-66H High power switching use insulated type Datasheet

MITSUBISHI HVIGBT MODULES
ARY
LIMIN
.
ation
nge.
pecific to cha
final s subject
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it
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Notice parame
Som
CM800HA-66H
PRE
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800HA-66H
● IC ................................................................... 800A
● VCES ....................................................... 3300V
● Insulated Type
● 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
4 - M8 NUTS
57±0.25
20
57±0.25
E
C
E
CM
E
C
3 - M4 NUTS
C
140
124±0.25
E
40
C
G
C
E
CIRCUIT DIAGRAM
G
10.35
6 - φ 7 MOUNTING HOLES
10.65
48.8
15
61.5
40
18
LABEL
30
28
5
38
5.2
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998
MITSUBISHI HVIGBT MODULES
ARY
LIMIN
.
ation
nge.
pecific to cha
final s subject
a
t
o
n
are
is
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it
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m
e: Th
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Notice parame
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PRE
CM800HA-66H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
3300
±20
800
1600
800
1600
6940
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 8.24
2.84 ~ 3.43
0.88 ~ 1.08
1.5
(Note 2)
(Note 2)
Main terminal to Base, AC for 1 minute
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC (Note 1)
trr (Note 1)
Qrr (Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Note 1.
2.
3.
4.
Parameter
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
Limits
Typ
—
IC = 80mA, VCE = 10V
4.5
6.0
7.5
V
VGE = VGES, VCE = 0V
Tj = 25°C
IC = 800A, VGE = 15V
Tj = 125°C
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.40
4.80
86
5
2
6.7
—
—
—
—
3.30
—
200
—
—
0.008
0.5
5.72
—
—
—
—
—
1.60
2.00
2.50
1.00
4.29
1.20
—
0.018
0.036
—
µA
VCE = 10V
VGE = 0V
VCC = 1650V, IC = 800A, VGE = 15V
VCC = 1650V, IC = 800A
VGE1 = VGE2 = 15V
RG = 3.75Ω
Resistive load switching operation
IE = 800A, VGE = 0V
IE = 800A
die / dt = –1600A / µs
IGBT part
FWDi part
Case to fin, conductive grease applied
(Note 4)
Max
10
Unit
VCE = VCES, VGE = 0V
Min
—
mA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
°C/W
°C/W
°C/W
IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating.
Junction temperature (Tj) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Aug.1998
MITSUBISHI HVIGBT MODULES
ARY
LIMIN
.
ation
nge.
pecific to cha
final s subject
a
t
o
n
are
is
s
it
is
m
e: Th
tric li
Notice parame
Som
PRE
CM800HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
1600
1600
VCE=10V
1400
VGE=12V
VGE=11V
VGE=13V
VGE=14V
1200
VGE=15V
1000
VGE=20V
800
VGE=10V
600
VGE=9V
400
200
0
0
1
2
3
4
5
6
VGE=8V
VGE=7V
7 8 9 10
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
Tj=25°C
1400
1200
1000
800
600
400
200
0
Tj = 25°C
Tj = 125°C
0
2
4
6
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
VGE=15V
EMITTER CURRENT IE (A)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
6
4
2
Tj = 25°C
Tj = 125°C
0
0
400
800
1200
1600
COLLECTOR CURRENT IC (A)
2000
104
7
5
3
2
Tj=25°C
103
7
5
3
2
102
7
5
3
2
101
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
Aug.1998
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