BZX85-Series Vishay Semiconductors Zener Diodes Features • Silicon Planar Power Zener Diodes • For use in stabilizing and clipping circuits e2 with high power rating • The Zener voltages are graded according to the international E 24 standard. Replace suffix "C" with "B" for ± 2 % tolerance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17173 Applications • Voltage stabilization Mechanical Data Case: DO41 Glass case Weight: approx. 310 mg Cathode Band Color: black Packaging Codes/Options: TR/5 k per 13" reel (52 mm tape), 25 k/box TAP/5 k per ammo pack (52 mm tape), 25 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Ptot 1.31) W Zener current (see Table "Electrical Characteristics") Power dissipation 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Symbol Value Unit RthJA 1101) K/W Junction temperature Tj 175 °C Storage temperature Tstg - 55 to + 175 °C Thermal resistance junction to ambient air 1) Test condition Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Document Number 85607 Rev. 1.8, 31-May-07 www.vishay.com 1 BZX85-Series Vishay Semiconductors Electrical Characteristics Partnumber Zener Voltage Dynamic Resistance Temperature Coefficient of Zener Voltage Range 1) VZ at IZT rZT3) at IZT rZK3) at IZK αVZ at IZ = IZT at IR at VR IZ V Ω mA Ω mA %/°C µA V mA min max min max BZX85C2V7 2.5 2.9 < 20 80 < 400 1 - 0.08 - 0.05 < 150 1 360 BZX85C3V0 2.8 3.2 < 20 80 < 400 1 - 0.08 - 0.05 < 100 1 330 BZX85C3V3 3.1 3.5 < 20 80 < 400 1 - 0.08 - 0.05 < 40 1 300 BZX85C3V6 3.4 3.8 < 20 60 < 500 1 - 0.08 - 0.05 < 20 1 290 BZX85C3V9 3.7 4.1 < 15 60 < 500 1 - 0.07 - 0.02 < 10 1 280 BZX85C4V3 4 4.6 < 13 50 < 500 1 - 0.05 0.01 <3 1 250 BZX85C4V7 4.4 5 < 13 45 < 600 1 - 0.03 0.04 <3 1 215 BZX85C5V1 4.8 5.4 < 10 45 < 500 1 - 0.01 0.04 <1 1.5 200 BZX85C5V6 5.2 6 <7 45 < 400 1 0 0.045 <1 2 190 BZX85C6V2 5.8 6.6 <4 35 < 300 1 0.01 0.055 <1 3 170 BZX85C6V8 6.4 7.2 < 3.5 35 < 300 1 0.015 0.06 <1 4 155 BZX85C7V5 7 7.9 <3 35 < 200 0.5 0.02 0.065 <1 4.5 140 BZX85C8V2 7.7 8.7 <5 25 < 200 0.5 0.03 0.07 <1 6.2 130 BZX85C9V1 8.5 9.6 <5 25 < 200 0.5 0.035 0.075 <1 6.8 120 BZX85C10 9.4 10.6 <7 25 < 200 0.5 0.04 0.08 < 0.5 7.5 105 BZX85C11 10.4 11.6 <8 20 < 300 0.5 0.045 0.08 < 0.5 8.2 97 BZX85C12 11.4 12.7 <9 20 < 350 0.5 0.045 0.085 < 0.5 9.1 88 BZX85C13 12.4 14.1 < 10 20 < 400 0.5 0.05 0.085 < 0.5 10 79 BZX85C15 13.8 15.6 < 15 15 < 500 0.5 0.055 0.09 < 0.5 11 71 BZX85C16 15.3 17.1 < 15 15 < 500 0.5 0.055 0.09 < 0.5 12 66 BZX85C18 16.8 19.1 < 20 15 < 500 0.5 0.06 0.09 < 0.5 13 62 BZX85C20 18.8 21.2 < 24 10 < 600 0.5 0.06 0.09 < 0.5 15 56 BZX85C22 20.8 23.3 < 25 10 < 600 0.5 0.06 0.095 < 0.5 16 52 BZX85C24 22.8 25.6 < 25 10 < 600 0.5 0.06 0.095 < 0.5 18 47 BZX85C27 25.1 28.9 < 30 8 < 750 0.25 0.06 0.095 < 0.5 20 41 BZX85C30 28 32 < 30 8 < 1000 0.25 0.06 0.095 < 0.5 22 36 BZX85C33 31 35 < 35 8 < 1000 0.25 0.06 0.095 < 0.5 24 33 BZX85C36 34 38 < 40 8 < 1000 0.25 0.06 0.095 < 0.5 27 30 BZX85C39 37 41 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 30 28 BZX85C43 40 46 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 33 26 BZX85C47 44 50 < 90 4 < 1500 0.25 0.06 0.095 < 0.5 36 23 BZX85C51 48 54 < 115 4 < 1500 0.25 0.06 0.095 < 0.5 39 21 BZX85C56 52 60 < 120 4 < 2000 0.25 0.06 0.095 < 0.5 43 19 BZX85C62 58 66 < 125 4 < 2000 0.25 0.06 0.095 < 0.5 47 16 BZX85C68 64 72 < 130 4 < 2000 0.25 0.055 0.095 < 0.5 51 15 BZX85C75 70 80 < 135 4 < 2000 0.25 0.055 0.095 < 0.5 56 14 BZX85C82 77 87 < 200 2.7 < 3000 0.25 0.055 0.095 < 0.5 62 12 BZX85C91 85 96 < 250 2.7 < 3000 0.25 0.055 0.095 < 0.5 68 10 BZX85C100 96 106 < 350 2.7 < 3000 0.25 0.055 0.095 < 0.5 75 9.4 1) Measured with pulses tp = 5 ms 2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case 3) Measured with f = 1 kHz www.vishay.com 2 Reverse Leakage Admissible Zener Current Current2) Document Number 85607 Rev. 1.8, 31-May-07 BZX85-Series Vishay Semiconductors Electrical Characteristics Partnumber Zener Voltage Dynamic Resistance Temperature Coefficient of Zener Voltage Range1) Reverse Leakage Admissible Zener Current Current2) VZ at IZT rZT3) at IZT rZK3) at IZK αVZ at IZ = IZT at IR at VR IZ V Ω mA Ω mA %/°C µA V mA 360 min max min max BZX85B2V7 2.64 2.76 < 20 80 < 400 1 - 0.08 - 0.05 < 150 1 BZX85B3V0 2.94 3.06 < 20 80 < 400 1 - 0.08 - 0.05 < 100 1 330 BZX85B3V3 2.24 3.36 < 20 80 < 400 1 - 0.08 - 0.05 < 40 1 300 BZX85B3V6 3.53 3.67 < 20 60 < 500 1 - 0.08 - 0.05 < 20 1 290 BZX85B3V9 3.82 3.98 < 15 60 < 500 1 - 0.07 - 0.02 < 10 1 280 BZX85B4V3 4.21 4.39 < 13 50 < 500 1 - 0.05 0.01 <3 1 250 BZX85B4V7 4.61 4.79 < 13 45 < 600 1 - 0.03 0.04 <3 1 215 BZX85B5V1 5 5.2 < 10 45 < 500 1 - 0.01 0.04 <1 1.5 200 BZX85B5V6 5.49 5.71 <7 45 < 400 1 0 0.045 <1 2 190 BZX85B6V2 6.08 6.32 <4 35 < 300 1 0.01 0.055 <1 3 170 BZX85B6V8 6.66 6.94 < 3.5 35 < 300 1 0.015 0.06 <1 4 155 BZX85B7V5 7.35 7.65 <3 35 < 200 0.5 0.02 0.065 <1 4.5 140 BZX85B8V2 8.04 8.36 <5 25 < 200 0.5 0.03 0.07 <1 6.2 130 BZX85B9V1 8.92 9.28 <5 25 < 200 0.5 0.035 0.075 <1 6.8 120 BZX85B10 9.8 10.2 <7 25 < 200 0.5 0.04 0.08 < 0.5 7.5 105 BZX85B11 10.8 11.2 <8 20 < 300 0.5 0.045 0.08 < 0.5 8.2 97 BZX85B12 11.8 12.2 <9 20 < 350 0.5 0.045 0.085 < 0.5 9.1 88 BZX85B13 12.7 13.3 < 10 20 < 400 0.5 0.05 0.085 < 0.5 10 79 BZX85B15 14.7 15.3 < 15 15 < 500 0.5 0.055 0.09 < 0.5 11 71 BZX85B16 15.7 16.3 < 15 15 < 500 0.5 0.055 0.09 < 0.5 12 66 BZX85B18 17.6 18.4 < 20 15 < 500 0.5 0.06 0.09 < 0.5 13 62 BZX85B20 19.6 20.4 < 24 10 < 600 0.5 0.06 0.09 < 0.5 15 56 BZX85B22 21.6 22.4 < 25 10 < 600 0.5 0.06 0.095 < 0.5 16 52 BZX85B24 23.5 24.5 < 25 10 < 600 0.5 0.06 0.095 < 0.5 18 47 BZX85B27 26.5 27.5 < 30 8 < 750 0.25 0.06 0.095 < 0.5 20 41 BZX85B30 29.4 30.6 < 30 8 < 1000 0.25 0.06 0.095 < 0.5 22 36 BZX85B33 32.3 33.7 < 35 8 < 1000 0.25 0.06 0.095 < 0.5 24 33 BZX85B36 35.3 36.7 < 40 8 < 1000 0.25 0.06 0.095 < 0.5 27 30 BZX85B39 38.2 39.8 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 30 28 BZX85B43 42.1 43.9 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 33 26 BZX85B47 46.1 47.9 < 90 4 < 1500 0.25 0.06 0.095 < 0.5 36 23 BZX85B51 50 52 < 115 4 < 1500 0.25 0.06 0.095 < 0.5 39 21 BZX85B56 54.9 57.1 < 120 4 < 2000 0.25 0.06 0.095 < 0.5 43 19 BZX85B62 60.8 63.2 < 125 4 < 2000 0.25 0.06 0.095 < 0.5 47 16 BZX85B68 66.6 69.4 < 130 4 < 2000 0.25 0.055 0.095 < 0.5 51 15 BZX85B75 73.5 76.5 < 135 4 < 2000 0.25 0.055 0.095 < 0.5 56 14 BZX85B82 80.4 83.6 < 200 2.7 < 3000 0.25 0.055 0.095 < 0.5 62 12 BZX85B91 89.2 92.8 < 250 2.7 < 3000 0.25 0.055 0.095 < 0.5 68 10 BZX85B100 98 102 < 350 2.7 < 3000 0.25 0.055 0.095 < 0.5 75 9.4 1) Measured with pulses tp = 5 ms 2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case 3) Measured with f = 1 kHz Document Number 85607 Rev. 1.8, 31-May-07 www.vishay.com 3 BZX85-Series Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified °C/W 103 rthA °C/W 200 5 4 3 2 RthA 102 5 4 3 2 10 5 4 3 2 0.5 100 max. 0.2 typ. 0.1 0.05 tP 0.02 0.01 1 10-5 tP v = ___ T T PI 0 10-4 10-3 10-2 10-1 1 tP 10 s 0 Figure 1. Pulse Thermal Resistance vs. Pulse Duration 30 mm 20 10 lead length 18458 18461 Figure 4. Thermal Resistance vs. Lead Length W 2 Ω 103 7 5 4 rzj Ptot 3 2 56 102 1 43 7 5 4 3 2 10 0.1 0 2 3 4 5 1 2 IZ 0 10 mA 3 4 5 Tamb 18459 Figure 2. Dynamic Resistance vs. Zener Current Ω 103 7 5 4 rzj 3 2 43 36 30 24 22 18 10 7 5 4 3 2 1 1 3 4 5 10 2 3 4 5 100 mA 18460 Figure 3. Dynamic Resistance vs. Zener Current 4 5 4 3 2 5V1 102 4V3 5 4 3 2 18 12 10 5 4 3 2 10 6V2 7V5 1 2 IZ www.vishay.com 18462 Figure 5. Admissible Power Dissipation vs. Ambient Temperature Ω 100 rzj 200 °C 100 1 2 3 4 5 7 10 2 IZ 3 4 5 7 100 mA 18463 Figure 6. Dynamic Resistance vs. Zener Current Document Number 85607 Rev. 1.8, 31-May-07 BZX85-Series Vishay Semiconductors mA 240 200 IZ Tj = 25 °C 4V7 3V9 5V6 6V8 160 8V2 10 120 12 80 40 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 V VZ 18456 Figure 7. Breakdown Characteristics mA 60 15 22 50 IZ Tj = 25 °C 18 27 40 33 39 30 47 20 10 0 0 5 10 15 20 25 30 35 VZ 40 45 50 V 18457 Figure 8. Breakdown Characteristics Package Dimensions in millimeters (inches) 94 9368 Document Number 85607 Rev. 1.8, 31-May-07 www.vishay.com 5 BZX85-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85607 Rev. 1.8, 31-May-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1