Vishay BZX85B82 Zener diode Datasheet

BZX85-Series
Vishay Semiconductors
Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• For use in stabilizing and clipping circuits
e2
with high power rating
• The Zener voltages are graded according to the
international E 24 standard. Replace suffix "C"
with "B" for ± 2 % tolerance
• Lead (Pb)-free component
• Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
17173
Applications
• Voltage stabilization
Mechanical Data
Case: DO41 Glass case
Weight: approx. 310 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/5 k per 13" reel (52 mm tape), 25 k/box
TAP/5 k per ammo pack (52 mm tape), 25 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Ptot
1.31)
W
Zener current
(see Table "Electrical Characteristics")
Power dissipation
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
RthJA
1101)
K/W
Junction temperature
Tj
175
°C
Storage temperature
Tstg
- 55 to + 175
°C
Thermal resistance junction to ambient air
1)
Test condition
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Document Number 85607
Rev. 1.8, 31-May-07
www.vishay.com
1
BZX85-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Zener Voltage
Dynamic Resistance
Temperature
Coefficient
of
Zener Voltage
Range 1)
VZ at IZT
rZT3)
at IZT
rZK3)
at IZK
αVZ at IZ = IZT
at IR
at VR
IZ
V
Ω
mA
Ω
mA
%/°C
µA
V
mA
min
max
min
max
BZX85C2V7
2.5
2.9
< 20
80
< 400
1
- 0.08
- 0.05
< 150
1
360
BZX85C3V0
2.8
3.2
< 20
80
< 400
1
- 0.08
- 0.05
< 100
1
330
BZX85C3V3
3.1
3.5
< 20
80
< 400
1
- 0.08
- 0.05
< 40
1
300
BZX85C3V6
3.4
3.8
< 20
60
< 500
1
- 0.08
- 0.05
< 20
1
290
BZX85C3V9
3.7
4.1
< 15
60
< 500
1
- 0.07
- 0.02
< 10
1
280
BZX85C4V3
4
4.6
< 13
50
< 500
1
- 0.05
0.01
<3
1
250
BZX85C4V7
4.4
5
< 13
45
< 600
1
- 0.03
0.04
<3
1
215
BZX85C5V1
4.8
5.4
< 10
45
< 500
1
- 0.01
0.04
<1
1.5
200
BZX85C5V6
5.2
6
<7
45
< 400
1
0
0.045
<1
2
190
BZX85C6V2
5.8
6.6
<4
35
< 300
1
0.01
0.055
<1
3
170
BZX85C6V8
6.4
7.2
< 3.5
35
< 300
1
0.015
0.06
<1
4
155
BZX85C7V5
7
7.9
<3
35
< 200
0.5
0.02
0.065
<1
4.5
140
BZX85C8V2
7.7
8.7
<5
25
< 200
0.5
0.03
0.07
<1
6.2
130
BZX85C9V1
8.5
9.6
<5
25
< 200
0.5
0.035
0.075
<1
6.8
120
BZX85C10
9.4
10.6
<7
25
< 200
0.5
0.04
0.08
< 0.5
7.5
105
BZX85C11
10.4
11.6
<8
20
< 300
0.5
0.045
0.08
< 0.5
8.2
97
BZX85C12
11.4
12.7
<9
20
< 350
0.5
0.045
0.085
< 0.5
9.1
88
BZX85C13
12.4
14.1
< 10
20
< 400
0.5
0.05
0.085
< 0.5
10
79
BZX85C15
13.8
15.6
< 15
15
< 500
0.5
0.055
0.09
< 0.5
11
71
BZX85C16
15.3
17.1
< 15
15
< 500
0.5
0.055
0.09
< 0.5
12
66
BZX85C18
16.8
19.1
< 20
15
< 500
0.5
0.06
0.09
< 0.5
13
62
BZX85C20
18.8
21.2
< 24
10
< 600
0.5
0.06
0.09
< 0.5
15
56
BZX85C22
20.8
23.3
< 25
10
< 600
0.5
0.06
0.095
< 0.5
16
52
BZX85C24
22.8
25.6
< 25
10
< 600
0.5
0.06
0.095
< 0.5
18
47
BZX85C27
25.1
28.9
< 30
8
< 750
0.25
0.06
0.095
< 0.5
20
41
BZX85C30
28
32
< 30
8
< 1000
0.25
0.06
0.095
< 0.5
22
36
BZX85C33
31
35
< 35
8
< 1000
0.25
0.06
0.095
< 0.5
24
33
BZX85C36
34
38
< 40
8
< 1000
0.25
0.06
0.095
< 0.5
27
30
BZX85C39
37
41
< 50
6
< 1000
0.25
0.06
0.095
< 0.5
30
28
BZX85C43
40
46
< 50
6
< 1000
0.25
0.06
0.095
< 0.5
33
26
BZX85C47
44
50
< 90
4
< 1500
0.25
0.06
0.095
< 0.5
36
23
BZX85C51
48
54
< 115
4
< 1500
0.25
0.06
0.095
< 0.5
39
21
BZX85C56
52
60
< 120
4
< 2000
0.25
0.06
0.095
< 0.5
43
19
BZX85C62
58
66
< 125
4
< 2000
0.25
0.06
0.095
< 0.5
47
16
BZX85C68
64
72
< 130
4
< 2000
0.25
0.055
0.095
< 0.5
51
15
BZX85C75
70
80
< 135
4
< 2000
0.25
0.055
0.095
< 0.5
56
14
BZX85C82
77
87
< 200
2.7
< 3000
0.25
0.055
0.095
< 0.5
62
12
BZX85C91
85
96
< 250
2.7
< 3000
0.25
0.055
0.095
< 0.5
68
10
BZX85C100
96
106
< 350
2.7
< 3000
0.25
0.055
0.095
< 0.5
75
9.4
1)
Measured with pulses tp = 5 ms
2)
Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
3)
Measured with f = 1 kHz
www.vishay.com
2
Reverse Leakage Admissible Zener
Current
Current2)
Document Number 85607
Rev. 1.8, 31-May-07
BZX85-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Zener Voltage
Dynamic Resistance
Temperature
Coefficient
of
Zener Voltage
Range1)
Reverse Leakage Admissible Zener
Current
Current2)
VZ at IZT
rZT3)
at IZT
rZK3)
at IZK
αVZ at IZ = IZT
at IR
at VR
IZ
V
Ω
mA
Ω
mA
%/°C
µA
V
mA
360
min
max
min
max
BZX85B2V7
2.64
2.76
< 20
80
< 400
1
- 0.08
- 0.05
< 150
1
BZX85B3V0
2.94
3.06
< 20
80
< 400
1
- 0.08
- 0.05
< 100
1
330
BZX85B3V3
2.24
3.36
< 20
80
< 400
1
- 0.08
- 0.05
< 40
1
300
BZX85B3V6
3.53
3.67
< 20
60
< 500
1
- 0.08
- 0.05
< 20
1
290
BZX85B3V9
3.82
3.98
< 15
60
< 500
1
- 0.07
- 0.02
< 10
1
280
BZX85B4V3
4.21
4.39
< 13
50
< 500
1
- 0.05
0.01
<3
1
250
BZX85B4V7
4.61
4.79
< 13
45
< 600
1
- 0.03
0.04
<3
1
215
BZX85B5V1
5
5.2
< 10
45
< 500
1
- 0.01
0.04
<1
1.5
200
BZX85B5V6
5.49
5.71
<7
45
< 400
1
0
0.045
<1
2
190
BZX85B6V2
6.08
6.32
<4
35
< 300
1
0.01
0.055
<1
3
170
BZX85B6V8
6.66
6.94
< 3.5
35
< 300
1
0.015
0.06
<1
4
155
BZX85B7V5
7.35
7.65
<3
35
< 200
0.5
0.02
0.065
<1
4.5
140
BZX85B8V2
8.04
8.36
<5
25
< 200
0.5
0.03
0.07
<1
6.2
130
BZX85B9V1
8.92
9.28
<5
25
< 200
0.5
0.035
0.075
<1
6.8
120
BZX85B10
9.8
10.2
<7
25
< 200
0.5
0.04
0.08
< 0.5
7.5
105
BZX85B11
10.8
11.2
<8
20
< 300
0.5
0.045
0.08
< 0.5
8.2
97
BZX85B12
11.8
12.2
<9
20
< 350
0.5
0.045
0.085
< 0.5
9.1
88
BZX85B13
12.7
13.3
< 10
20
< 400
0.5
0.05
0.085
< 0.5
10
79
BZX85B15
14.7
15.3
< 15
15
< 500
0.5
0.055
0.09
< 0.5
11
71
BZX85B16
15.7
16.3
< 15
15
< 500
0.5
0.055
0.09
< 0.5
12
66
BZX85B18
17.6
18.4
< 20
15
< 500
0.5
0.06
0.09
< 0.5
13
62
BZX85B20
19.6
20.4
< 24
10
< 600
0.5
0.06
0.09
< 0.5
15
56
BZX85B22
21.6
22.4
< 25
10
< 600
0.5
0.06
0.095
< 0.5
16
52
BZX85B24
23.5
24.5
< 25
10
< 600
0.5
0.06
0.095
< 0.5
18
47
BZX85B27
26.5
27.5
< 30
8
< 750
0.25
0.06
0.095
< 0.5
20
41
BZX85B30
29.4
30.6
< 30
8
< 1000
0.25
0.06
0.095
< 0.5
22
36
BZX85B33
32.3
33.7
< 35
8
< 1000
0.25
0.06
0.095
< 0.5
24
33
BZX85B36
35.3
36.7
< 40
8
< 1000
0.25
0.06
0.095
< 0.5
27
30
BZX85B39
38.2
39.8
< 50
6
< 1000
0.25
0.06
0.095
< 0.5
30
28
BZX85B43
42.1
43.9
< 50
6
< 1000
0.25
0.06
0.095
< 0.5
33
26
BZX85B47
46.1
47.9
< 90
4
< 1500
0.25
0.06
0.095
< 0.5
36
23
BZX85B51
50
52
< 115
4
< 1500
0.25
0.06
0.095
< 0.5
39
21
BZX85B56
54.9
57.1
< 120
4
< 2000
0.25
0.06
0.095
< 0.5
43
19
BZX85B62
60.8
63.2
< 125
4
< 2000
0.25
0.06
0.095
< 0.5
47
16
BZX85B68
66.6
69.4
< 130
4
< 2000
0.25
0.055
0.095
< 0.5
51
15
BZX85B75
73.5
76.5
< 135
4
< 2000
0.25
0.055
0.095
< 0.5
56
14
BZX85B82
80.4
83.6
< 200
2.7
< 3000
0.25
0.055
0.095
< 0.5
62
12
BZX85B91
89.2
92.8
< 250
2.7
< 3000
0.25
0.055
0.095
< 0.5
68
10
BZX85B100
98
102
< 350
2.7
< 3000
0.25
0.055
0.095
< 0.5
75
9.4
1)
Measured with pulses tp = 5 ms
2)
Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
3)
Measured with f = 1 kHz
Document Number 85607
Rev. 1.8, 31-May-07
www.vishay.com
3
BZX85-Series
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
°C/W
103
rthA
°C/W
200
5
4
3
2
RthA
102
5
4
3
2
10
5
4
3
2
0.5
100
max.
0.2
typ.
0.1
0.05
tP
0.02
0.01
1
10-5
tP
v = ___
T
T
PI
0
10-4 10-3 10-2
10-1
1
tP
10 s
0
Figure 1. Pulse Thermal Resistance vs. Pulse Duration
30 mm
20
10
lead length
18458
18461
Figure 4. Thermal Resistance vs. Lead Length
W
2
Ω
103
7
5
4
rzj
Ptot
3
2
56
102
1
43
7
5
4
3
2
10
0.1
0
2
3 4 5
1
2
IZ
0
10 mA
3 4 5
Tamb
18459
Figure 2. Dynamic Resistance vs. Zener Current
Ω
103
7
5
4
rzj
3
2
43
36
30
24
22
18
10
7
5
4
3
2
1
1
3 4 5
10
2
3 4 5
100 mA
18460
Figure 3. Dynamic Resistance vs. Zener Current
4
5
4
3
2
5V1
102
4V3
5
4
3
2
18
12
10
5
4
3
2
10
6V2
7V5
1
2
IZ
www.vishay.com
18462
Figure 5. Admissible Power Dissipation vs. Ambient Temperature
Ω
100
rzj
200 °C
100
1
2
3 4 5 7
10
2
IZ
3 4 5
7
100 mA
18463
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85607
Rev. 1.8, 31-May-07
BZX85-Series
Vishay Semiconductors
mA
240
200
IZ
Tj = 25 °C
4V7
3V9
5V6
6V8
160
8V2
10
120
12
80
40
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 V
VZ
18456
Figure 7. Breakdown Characteristics
mA
60
15
22
50
IZ
Tj = 25 °C
18
27
40
33
39
30
47
20
10
0
0
5
10
15
20
25
30
35
VZ
40
45 50 V
18457
Figure 8. Breakdown Characteristics
Package Dimensions in millimeters (inches)
94 9368
Document Number 85607
Rev. 1.8, 31-May-07
www.vishay.com
5
BZX85-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 85607
Rev. 1.8, 31-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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