Renesas CR6CM Mitsubishi semiconductor thyristor Datasheet

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
CR6CM
Dimensions
in mm
3.2±0.2
4.5
1.3
4
7.0
16 MAX
10.5 MAX
∗
TYPE
NAME
VOLTAGE
CLASS
φ3.6±0.2
12.5 MIN
3.8 MAX
1.0
0.8
2.5
0.5
2.6
4.5
2.5
∗
123
24
3
• IT (AV) ........................................................................... 6A
• VDRM ..............................................................400V/600V
• IGT ..........................................................................10mA
1
1
2
3
4
Measurement point of
case temperature
CATHODE
ANODE
GATE
ANODE
TO-220
APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
8
12
Unit
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
720
V
VR (DC)
DC reverse voltage
320
480
V
VDRM
Repetitive peak off-state voltage
400
600
V
VD (DC)
DC off-state voltage
320
480
V
Symbol
Conditions
Parameter
Unit
A
6
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive
90
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
34
A2s
RMS on-state current
IT (AV)
Average on-state current
Commercial frequency, sine half wave, 180° conduction, Tc =88°C
ITSM
Surge on-state current
I2t
I2t
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
for fusing
Ratings
9.4
IT (RMS)
5
W
0.5
W
Peak gate forward voltage
6
V
VRGM
Peak gate reverse voltage
10
V
IFGM
Peak gate forward current
2
Tj
Junction temperature
Storage temperature
Tstg
—
Weight
Typical value
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=125°C, V RRM applied
—
—
2.0
mA
IDRM
Repetitive peak off-state current
Tj=125°C, V DRM applied
—
—
2.0
mA
VTM
On-state voltage
Tc=25°C, ITM =20A, instantaneous value
—
—
1.7
V
VGT
Gate trigger voltage
Tj=25°C, VD=6V, IT=1A
—
—
1.0
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
0.2
—
—
V
IGT
Gate trigger current
Tj=25°C, VD=6V, IT=1A
—
—
10
mA
IH
Holding current
Tj=25°C, VD=12V
—
15
—
mA
R th (j-c)
Thermal resistance
Junction to case ✽1
—
—
3.0
°C/W
✽1. The contact thermal resistance R th (c-f) is 1.0°C/W with greased.
MAXIMUM ON-STATE CHARACTERISTICS
103
7 Tc = 125°C
5
3
2
102
7
5
3
2
101
7
5
3
2
100
0
1
2
3
4
ON-STATE VOLTAGE (V)
5
RATED SURGE ON-STATE CURRENT
200
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
PERFORMANCE CURVES
180
160
140
120
100
80
60
40
20
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
VFGM = 6V
101
7
5
3
2
PGM = 5W
PG(AV)
= 0.5W
VGT = 1V
100
7
5
3
2
IGT = 10mA
VGD = 0.2V
IFGM = 2A
10–1
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5
103
7
5
3
2
TYPICAL EXAMPLE
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
1.0
GATE TRIGGER VOLTAGE (V)
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
102
7
5
3
2
DISTRIBUTION
0.9
TYPICAL
EXAMPLE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 –20
0
20
40
60
80 100 120
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE VOLTAGE (V)
GATE CHARACTERISTICS
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
10–3 2 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
16
θ = 30°
14
180°
120°
90°
60°
12
10
8
6
θ
4
360°
2
0
0
2
4
6
8
RESISTIVE,
INDUCTIVE
LOADS
10 12 14 16
AVERAGE ON-STATE CURRENT (A)
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
JUNCTION TEMPERATURE (°C)
140
θ
120
360°
100
RESISTIVE,
INDUCTIVE
LOADS
80
60
40
θ = 30° 60° 90° 120°
20
0
0
1
2
3
4
5
180°
6
7
8
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6CM
MEDIUM POWER USE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
16
θ = 30°
14
180°
120°
90°
60°
12
10
8
6
4
θ
2
360°
0
0
2
4
6
θ
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
RESISTIVE LOADS
8 10 12 14 16
140
θ
120
360°
80
60
6
θ
4
360°
2
0
0
2
4
6
8
RESISTIVE,
INDUCTIVE
LOADS
10 12 14 16
60°
BREAKOVER VOLTAGE (T j = t°C)
BREAKOVER VOLTAGE (T j = 25°C )
120
TYPICAL EXAMPLE
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
2
4
6
8
10
140
12
14
16
θ
360°
120
RESISTIVE,
INDUCTIVE
LOADS
100
80
60
θ = 30° 90° 180°
40
DC
60° 120° 270°
20
0
0
2
4
6
8
10
12
14
16
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE (dv/dt = vV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
80
0
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
140
100
120°
AVERAGE ON-STATE CURRENT (A)
100 (%)
100 (%)
160
90° 180°
20
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
θ = 30°
40
0
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
8
RESISTIVE LOADS
100
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
16
θ = 30°
DC
14
60°
270°
180°
12
120°
90°
10
θ
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
Tj = 125°C
TYPICAL
140
EXAMPLE
120
IGT (25°C)
# 1 4.7mA
100
# 2 7.2mA
80
#2
60
40
#1
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
50
45
DISTRIBUTION
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
TYPICAL EXAMPLE
HOLDING CURRENT (mA)
HOLDING CURRENT (mA)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
15
10
0
0
2
4
6
8 10 12 14 16 18 20
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
VD = 100V
RL = 16Ω
Ta = 25°C
TYPICAL
EXAMPLE
IGT (25°C)
# 5.2mA
4.0
3.5
3.0
2.5
#
1.5
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
80
TYPICAL
EXAMPLE
70
TURN-OFF TIME (µs)
TURN-ON TIME (µs)
20
TURN-ON TIME VS. GATE CURRENT
1.0
60
50
40
30
DISTRIBUTION
20
10
0.5
0
0 10 20 30 40 50 60 70 80 90 100
0
20
IT = 6A, –di/dt = 5A/µs,
VD = 300V, dv/dt = 20V/µs
VR = 50V
40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
120
100 (%)
GATE CURRENT (mA)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
25
GATE TRIGGER CURRENT (mA)
4.5
REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C)
30
JUNCTION TEMPERATURE (°C)
5.0
0
35
5
100
–40 –20 0 20 40 60 80 100 120 140 160
2.0
40
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
104
7 TYPICAL EXAMPLE
5
3
2
tw
0.1s
103
7
5
3
2
102
7
5
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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