CEP09N7A/CEB09N7A CEF09N7A N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS(ON) ID @VGS CEP09N7A Type 700V 1.2Ω 8A 10V CEB09N7A 700V 1.2Ω 8A 10V CEF09N7A 700V 1.2Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Drain Current-Continuous Drain Current-Pulsed ID a IDM Maximum Power Dissipation @ TC = 25 C 8 f PD - Derate above 25 C TO-220F Units V V 8 e e A A 30 30 167 50 W 1.33 0.4 W/ C TJ,Tstg -55 to 150 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 0.75 2.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 1. 2006.Oct http://www.cetsemi.com Details are subject to change without notice . 1 CEP09N7A/CEB09N7A CEF09N7A Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 700 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 700V, VGS = 0V 50 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 1.2 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 5A gFS VDS = 5V, ID = 8A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 2 8 S 1800 pF 160 pF 17 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 8A, VGS = 10V, RGEN = 10Ω 20 40 ns 7 14 ns 38 76 ns Turn-Off Fall Time tf 7 14 ns Total Gate Charge Qg 32 42.5 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 8A, VGS = 10V 10 nC 9 nC Drain-Source Diode Characteristics and Maximun Ratings IS g Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 8A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 4.3A . 2 8 A 1.6 V 4 CEP09N7A/CEB09N7A CEF09N7A 12 10 ID, Drain Current (A) ID, Drain Current (A) 12 VGS=10,9,8,7V 8 VGS=6V 6 4 VGS=5V 2 10 8 6 4 25 C 2 TJ=125C -55 C 0 0 0 3 6 9 12 1 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 6 Figure 2. Transfer Characteristics 1600 1200 800 Coss 400 Crss 0 0 5 10 15 20 25 3.0 2.5 ID=8A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 5 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 VGS, Gate-to-Source Voltage (V) 2000 1.2 3 VDS, Drain-to-Source Voltage (V) 2400 1.3 2 -25 0 25 50 75 100 125 VGS=0V 10 10 1 0 10-1 0.4 150 0.7 1.0 1.3 1.7 2.0 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=8A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP09N7A/CEB09N7A CEF09N7A 6 4 2 0 0 8 16 24 10 100µs 1ms 1 10ms DC 10 10 32 4 RDS(ON)Limit 0 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 0.1 -1 0.05 0.02 0.01 10 10 PDM t1 Single Pulse -2 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC= P* RθJC (t) 4. Duty Cycle, D=t1/t2 -3 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3