D40D1 D40D2 D40D3 D40D4 D40D5 D40D11 D40D7 D40D13 D40D8 D40D14 D40D10 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D40D series types are NPN silicon power transistors designed for amplifier and switching applications. The PNP complementary types are the D41D series. NPN SILICON POWER TRANSISTOR MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICES IEBO BVCEO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE D40D1 D40D2 SYMBOL D40D3 VCES 45 VCEO 30 VEBO IC ICM PD TJ, Tstg ΘJC D40D4 D40D5 60 45 D40D7 D40D8 75 60 5.0 1.0 1.5 6.25 -65 to +150 20 CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=Rated VCES VEB=5.0V lC=10mA (D40D1, 2, 3) 30 lC=10mA (D40D4, 5) 45 lC=10mA (D40D7, 8) 60 lC=10mA (D40D10, 11, 13, 14) 75 lC=500mA, IB=50mA (D40D1, 2, 4, 5) lC=500mA, IB=50mA (D40D7, 8, 10, 11, 13, 14) lC=500mA, IB=50mA VCE=2.0V, IC=100mA VCE=2.0V, IC=1.0A (Except D40D13, 14) D40D1 D40D4 D40D7 D40D10 D40D13 MIN MAX 50 150 10 - D40D2 MIN MAX 120 360 20 D40D10 D40D11 D40D13 D40D14 90 75 - UNITS V V V A A W °C °C/W MAX 100 100 UNITS nA nA V V V V V V V 0.5 1.0 1.5 D40D3 MIN MAX 290 10 - D40D5 D40D8 D40D11 D40D14 MIN MAX 120 360 10 - R1 (23-January 2012) D40D1 D40D2 D40D3 D40D4 D40D5 D40D11 D40D7 D40D13 D40D8 D40D14 D40D10 NPN SILICON POWER TRANSISTOR TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER R1 (23-January 2012) w w w. c e n t r a l s e m i . c o m