SuperFET FCD4N60 TM 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8nC) • Low effective output capacitance (typ. Coss.eff = 32pF) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • 100% avalanche tested D D G S G D-PAK FCD Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR (Note 1) FCD4N60 Unit 600 V 3.9 2.5 A A 11.7 A ± 30 V Single Pulsed Avalanche Energy (Note 2) 128 mJ Avalanche Current (Note 1) 3.9 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 50 0.4 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics FCD4N60 Unit RθJC Symbol Thermal Resistance, Junction-to-Case Parameter 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 83 °C/W ©2006 Fairchild Semiconductor Corporation FCD4N60 Rev. B 1 www.fairchildsemi.com FCD4N60 600V N-Channel MOSFET October 2006 Device Marking Device Package Reel Size Tape Width Quantity FCD4N60 FCD4N60TM D-PAK 380mm 16mm 2500 FCD4N60 FCD4N60TF D-PAK 380mm 16mm 2000 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 3.9A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 1.0 1.2 Ω -- 3.2 -- S -- 415 540 pF -- 210 275 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 2.0A gFS Forward Transconductance VDS = 40V, ID = 2.0A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss Reverse Transfer Capacitance -- 19.5 -- pF Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 12 16 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 32 -- pF VDD = 300V, ID = 3.9A RG = 25Ω -- 16 45 ns -- 45 100 ns -- 36 85 ns -- 30 70 ns -- 12.8 16.6 nC -- 2.4 -- nC -- 7.1 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 3.9A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3.9 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.7 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 3.9A -- -- 1.4 V trr Reverse Recovery Time -- 277 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 3.9A dIF/dt =100A/μs -- 2.07 -- μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3.9A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCD4N60 Rev. B 2 www.fairchildsemi.com FCD4N60 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 1 10 Top : 15.0 V 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID , Drain Current [A] ID, Drain Current [A] 10 Figure 2. Transfer Characteristics 1 * Notes : 1. 250μs Pulse Test o 150 C 0 10 o 25 C o -55 C * Note 1. VDS = 40V o 2. TC = 25 C 0.1 2. 250μs Pulse Test -1 0.1 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 4 3 VGS = 10V 2 VGS = 20V 1 1 10 0 10 o 150 C o 25 C * Notes : 1. VGS = 0V o 2. 250μs Pulse Test * Note : TJ = 25 C 0 0.0 -1 2.5 5.0 7.5 10.0 10 12.5 0.2 ID, Drain Current [A] 1200 0.4 0.6 VDS = 120V VGS, Gate-Source Voltage [V] Crss = Cgd * Notes : 1. VGS = 0 V Coss 2. f = 1 MHz Ciss 400 200 Crss 0 0 10 10 VDS = 300V 10 VDS = 480V 8 6 4 2 * Note : ID = 3.9A 0 1 0 5 10 15 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FCD4N60 Rev. B 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) 800 600 1.0 Figure 6. Gate Charge Characteristics Coss = Cds + Cgd 1000 0.8 VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics Capacitance [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] RDS(ON) [Ω],Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] 3 www.fairchildsemi.com FCD4N60 600V N-Channel MOSFET Typical Performance Characteristics FCD4N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 *Notes : 1. VGS = 0 V 0.9 2. ID = 250μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 *Notes : 1. VGS = 10 V 0.5 2. ID = 2.0 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 ο TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 4 Operation in This Area is Limited by R DS(on) 10 us ID, Drain Current [A] 3 ID, Drain Current [A] 1 10 100 us 1 ms 10 ms 0 10 DC * Notes : o 1. TC = 25 C 2 1 o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 o TC, Case Temperature [ C] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response Figure 11-1. Transient Thermal Response Curve 10 D = 0 .5 0 0 .2 * N o te s : o 1 . Z θ J C (t) = 2 .5 C /W M a x. 0 .1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 10 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 2 0 .0 1 -1 PDM t1 sin g le p u lse 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ] FCD4N60 Rev. B 4 www.fairchildsemi.com FCD4N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCD4N60 Rev. B 5 www.fairchildsemi.com FCD4N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCD4N60 Rev. B 6 www.fairchildsemi.com FCD4N60 600V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FCD4N60 Rev. B 7 www.fairchildsemi.com FCD4N60 600V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 8 FCD4N60 Rev. B www.fairchildsemi.com