CMXT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2907A type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for small signal general purpose and switching applications. MARKING CODE: X2F SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W 60 60 5.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 10 ICBO VCB=50V, TA=125°C 10 ICEV VCE=30V, VBE=0.5V 50 BVCBO IC=10µA 60 BVCEO IC=10mA 60 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=500mA, IB=50mA 1.6 VBE(SAT) IC=150mA, IB=15mA 1.3 VBE(SAT) IC=500mA, IB=50mA 2.6 hFE VCE=10V, IC=0.1mA 75 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 50 fT VCE=20V, IC=50mA, f=100MHz 200 Cob VCB=10V, IE=0, f=1.0MHz 8.0 Cib VBE=2.0V, IC=0, f=1.0MHz 30 ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 45 ns td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 40 ns toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ts VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 UNITS nA µA nA V V V V V V V MHz pF pF ns ns ns R3 (12-February 2010) CMXT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTORS SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: X2F R3 (12-February 2010) w w w. c e n t r a l s e m i . c o m