MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE A B H J F K Q - THD (2 TYP.) C D J P - DIA. M R - THD (4 TYP.) L (2 TYP.) E G N E C E G Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.21 107.0 J 0.79 20.0 B 3.661±0.01 93.0±0.25 K 0.69 17.5 C 2.44 62.0 L 0.63 16.0 D 1.89±0.01 48.0±0.25 M 0.35 9.0 E F G H 1.42+0.04/-0.02 36.0+1.0/-0.5 1.14 29.0 1.02+0.04/-0.2 25.8+1.0/-0.5 0.94 24.0 N 0.28 7.0 P 0.26 Dia. Dia. 6.5 Q M6 Metric M6 R M4 Metric M4 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA-28H is a 1400V (VCES), 400 Ampere Single IGBT Module. Type CM Current Rating Amperes VCES Volts (x 50) 400 28 Sep.1998 MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400HA-28H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes Collector Current (TC =25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (TC =25°C) IE 400 Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (TC =25°C) Pc 2800 Watts Mounting Torque, M6 Terminal – 1.96 ~ 2.94 N·m Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N·m Mounting Torque, M4 Terminal – 0.98 ~ 1.47 N·m – 400 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V – 3.1 4.2** Volts IC = 400A, VGE = 15V, Tj = 150°C – 2.95 – Volts Total Gate Charge QG VCC = 800V, IC = 400A, VGE = 15V – 2040 – nC Emitter-Collector Voltage VEC IE = 400A, VGE = 0V – – 3.8 Volts Min. Typ. Max. Units – – 80 nF – – 28 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V Reverse Transfer Capacitance Cres – – 16 nF Resistive Turn-on Delay Time td(on) – – 300 ns Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 800V, IC = 400A, – – 500 ns td(off) VGE1 = VGE2 = 15V, RG = 0.78Ω – – 350 ns – – 500 ns Diode Reverse Recovery Time trr tf IE = 400A, diE/dt = –800A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 400A, diE/dt = –800A/µs – 4.0 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.045 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.09 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.040 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE 800 640 5 12 13 11 480 320 10 9 160 7 VCE = 10V Tj = 25°C Tj = 125°C 640 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) 480 320 160 0 0 2 4 6 8 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 160 320 6 4 2 IC = 160A 8 12 16 Cies 102 101 1.0 1.5 2.0 2.5 3.0 3.5 Coes Cres 100 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 REVERSE RECOVERY TIME, t rr, (ns) t d(on) tr VCC = 800V VGE = ±15V RG = 0.78Ω Tj = 125°C 103 Irr t rr 101 di/dt = -800A/µsec Tj = 25°C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) tf t d(off) 10-1 10-1 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 101 VGE = 0V 20 102 800 CAPACITANCE VS. VCE (TYPICAL) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 640 480 COLLECTOR-CURRENT, IC, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) IC = 800A IC = 400A 0 SWITCHING TIME, (ns) 1 Tj = 25°C 8 101 101 2 102 Tj = 25°C 4 3 20 103 10 0 4 0 0 10 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 VGE = 15V Tj = 25°C Tj = 125°C 8 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 400A 16 VCC = 600V VCC = 800V 12 8 4 0 0 800 1600 2400 3200 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM400HA-28H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.045°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.09°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998