Mitsubishi CM400HA-28H High power switching use insulated type Datasheet

MITSUBISHI IGBT MODULES
CM400HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
H
J
F
K
Q - THD
(2 TYP.)
C
D
J
P - DIA.
M
R - THD
(4 TYP.)
L
(2 TYP.)
E
G
N
E
C
E
G
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.21
107.0
J
0.79
20.0
B
3.661±0.01
93.0±0.25
K
0.69
17.5
C
2.44
62.0
L
0.63
16.0
D
1.89±0.01
48.0±0.25
M
0.35
9.0
E
F
G
H
1.42+0.04/-0.02 36.0+1.0/-0.5
1.14
29.0
1.02+0.04/-0.2 25.8+1.0/-0.5
0.94
24.0
N
0.28
7.0
P
0.26 Dia.
Dia. 6.5
Q
M6 Metric
M6
R
M4 Metric
M4
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one
IGBT in a single configuration with
a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-28H
is a 1400V (VCES), 400 Ampere
Single IGBT Module.
Type
CM
Current Rating
Amperes
VCES
Volts (x 50)
400
28
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM400HA-28H
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1400
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
400
Amperes
ICM
800*
Amperes
Collector Current (TC =25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (TC =25°C)
IE
400
Amperes
Peak Emitter Current**
IEM
800*
Amperes
Maximum Collector Dissipation (TC =25°C)
Pc
2800
Watts
Mounting Torque, M6 Terminal
–
1.96 ~ 2.94
N·m
Mounting Torque, M6 Mounting
–
1.96 ~ 2.94
N·m
Mounting Torque, M4 Terminal
–
0.98 ~ 1.47
N·m
–
400
Grams
Viso
2500
Vrms
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
2.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
5.0
6.5
8.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 400A, VGE = 15V
–
3.1
4.2**
Volts
IC = 400A, VGE = 15V, Tj = 150°C
–
2.95
–
Volts
Total Gate Charge
QG
VCC = 800V, IC = 400A, VGE = 15V
–
2040
–
nC
Emitter-Collector Voltage
VEC
IE = 400A, VGE = 0V
–
–
3.8
Volts
Min.
Typ.
Max.
Units
–
–
80
nF
–
–
28
nF
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Test Conditions
VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
Cres
–
–
16
nF
Resistive
Turn-on Delay Time
td(on)
–
–
300
ns
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
tr
VCC = 800V, IC = 400A,
–
–
500
ns
td(off)
VGE1 = VGE2 = 15V, RG = 0.78Ω
–
–
350
ns
–
–
500
ns
Diode Reverse Recovery Time
trr
tf
IE = 400A, diE/dt = –800A/µs
–
–
300
ns
Diode Reverse Recovery Charge
Qrr
IE = 400A, diE/dt = –800A/µs
–
4.0
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
0.045
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
0.09
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.040
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
800
640
5
12
13
11
480
320
10
9
160
7
VCE = 10V
Tj = 25°C
Tj = 125°C
640
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
15
Tj = 25oC
VGE = 20V
COLLECTOR CURRENT, IC, (AMPERES)
480
320
160
0
0
2
4
6
8
4
8
12
16
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
0
160
320
6
4
2
IC = 160A
8
12
16
Cies
102
101
1.0
1.5
2.0
2.5
3.0
3.5
Coes
Cres
100
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
REVERSE RECOVERY TIME, t rr, (ns)
t d(on)
tr
VCC = 800V
VGE = ±15V
RG = 0.78Ω
Tj = 125°C
103
Irr
t rr
101
di/dt = -800A/µsec
Tj = 25°C
101
101
102
EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
102
102
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
tf
t d(off)
10-1
10-1
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
101
VGE = 0V
20
102
800
CAPACITANCE VS. VCE
(TYPICAL)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
102
640
480
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
IC = 800A
IC = 400A
0
SWITCHING TIME, (ns)
1
Tj = 25°C
8
101
101
2
102
Tj = 25°C
4
3
20
103
10
0
4
0
0
10
100
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0
VGE = 15V
Tj = 25°C
Tj = 125°C
8
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
800
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
IC = 400A
16
VCC = 600V
VCC = 800V
12
8
4
0
0
800
1600
2400
3200
GATE CHARGE, QG, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-28H
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
10-2
10-1
100
101
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.045°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
10-2
10-1
100
101
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.09°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Sep.1998
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