ISC BUK453-100B High speed switching Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
BUK453-100A/B
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·use in Switched Mode Power Supplies (SMPS),
motor control,welding, And in general purpose switching
resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±30
V
ID
Ptot
Tj
Tstg
Drain
Current-continuou
[email protected] TC=37℃
BUK453-100A
14
BUK453-100B
13
A
Total [email protected]=25℃
75
W
Max. Operating Junction Temperature
175
℃
Storage Temperature Range
175
℃
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.0
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
60
℃/W
isc website:www.iscsemi.cn
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isc & iscsemi is registered trademark
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isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
BUK453-100A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
100
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
2.1
RDS(ON)
Drain-Source On-stage Resistance
VGS= 10V;
ID= 5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VSD
Diode Forward Voltage
isc website:www.iscsemi.cn
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MAX
UNIT
V
4
BUK453-100A
0.16
BUK453-100B
0.2
V
Ω
±100
nA
VDS= 100V;VGS= 0
10
uA
IF= 14A;VGS= 0
1.5
V
2
isc & iscsemi is registered trademark
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