CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features Frequency band: 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm Vctrl TTL Circuit Vc Vc Biasing Circuit IN OUT Biasing Circuit TTL Circuit TI Vc Vctrl Vc TO Vc 44 Pout & PAE@3dBc , Linear Gain The CHA7012 chip is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: -the backside of the chip is both RF and DC grounded -bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermo compression bonding process. TO PAE@3dBc (%) 40 Pout@3dBc(dBm 36 32 28 Linear Gain (Pin=0dBm) 24 20 16 9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 Frequency ( GHz) Pout & PAE @3dBc and Linear Gain @ 25°C Main Characteristics Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20% Symbol Parameter Min Typ Unit 10.4 GHz Fop Operating frequency range Psat Saturated output power @ 25°C 9 W P_3dBc Output power @ 3dBc @ 25°C 7 W G Small signal gain @ 25°C Operating temperature range 20 dB °C Top 9.2 Max -40 +80 ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHA70129082- 23 March 09 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 X-band High Power Amplifier CHA7012 Electrical Characteristics Tamb = 20°C, Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Operating frequency 9.2 10.4 GHz G Small signal gain 17.5 20 23 dB G_T Small signal gain variation versus -0.025 dB/°C temperature RLin Input Return Loss 8 10 dB RLout Output Return Loss 8 12 dB Psat Saturated output power 39.5 dBm Psat_T Saturated output power variation versus -0.01 dB/°C temperature P_3dBc Output power @ 3dBc (3) 38 38.5 dBm PAE_3dBc Power Added Efficiency @ 3dBc 34 38 % Vc Power supply voltage (3) 7.5 8 V Ic Power supply quiescent current (1) 1.9 A TI TTL input voltage 0 5 V I_TI TTL input current 1 mA Vctrl Collector control voltage 5 V Zctr Vctrl input port impedance (2) 350 Ohm Top Operating temperature range -40 +80 °C (1) Parameter tunable by Vctrl when control biasing circuit used. (2) This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18) (3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on robustness see Maximum ratings) Fop Absolute Maximum Ratings (1) Tamb = 20°C Symbol Cmp Vc Ic Ic_sat Vctrl Tj Tstg Parameter Compression level (2) Power supply voltage with RF Power supply quiescent current Power supply current in saturation Collector current control voltage Maximum junction temperature Storage temperature range Values 6 8 2.8 3.5 6.5 175 -55 to +125 Unit dBc V A A V °C °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vc using the rate 0.5 V / dBc Equivalent Thermal resistance to Backside: 6°C/W Ref. : DSCHA70129082- 23 March 09 2/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7012 Typical measured characteristics Measurements on Jig Vc=7.5V, VTTL=5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20% 30 28 Linear gain (dB) 26 24 22 20 18 16 +20°C +80°C -40°C 14 12 10 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 Frequency (GHz) Linear gain versus frequency and temperature 42 41 40 Pout (dBm) 39 38 37 +20°C +80°C -40°C 36 35 34 33 32 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 Frequency (GHz) Output Power @ 3dBc versus frequency and temperature Ref. : DSCHA70129082- 23 March 09 3/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7012 50 45 PAE (%) 40 35 30 +20°C +80°C -40°C 25 20 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 Frequency (GHz) PAE @ 3dBc versus frequency and temperature 3 2.9 2.8 2.7 Ic (A) 2.6 2.5 2.4 +20°C +80°C -40°C 2.3 2.2 2.1 2 8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1 Frequency (GHz) Ic @ 3dBc versus frequency and temperature Ref. : DSCHA70129082- 23 March 09 4/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7012 40 38 Pout (dB) 36 34 9.2GHz 9.4GHz 9.6GHz 9.8GHz 10GHz 10.2GHz 10.4GHz 32 30 28 26 -1 0 1 2 3 4 5 6 7 8 Compression (dB) Output Power @ 25°C versus compression and frequenc y 50 45 40 PAE (%) 35 30 9.2GHz 9.4GHz 9.6GHz 9.8GHz 10GHz 10.2GHz 10.4GHz 25 20 15 10 5 0 -1 0 1 2 3 4 5 6 7 8 Compression (dB) PAE @ 25°C versus compression and frequency Ref. : DSCHA70129082- 23 March 09 5/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7012 3 2.9 2.8 2.7 Ic (A) 2.6 2.5 9.2GHz 9.4GHz 9.6GHz 9.8GHz 10GHz 10.2GHz 10.4GHz 2.4 2.3 2.2 2.1 2 -1 0 1 2 3 4 5 6 7 8 Compression (dB) Ic (A) Collector current @ 25°C versus compression and fr equency Temperatures: -40°C; 20°C; +80°C Vc=7.5V Pul se= 100µs, Duty cycle 20% 3.0 2.8 Vctrl 2.6 2.4 TTL Input Voltage 2.2 2.0 +80 °C 1.8 20 °C 1.6 20 °C 1.4 1.2 +80 °C -40 °C 1.0 -40 °C 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 TI/Vctrl (V) Collector quiescent current versus TI & Vctrl and temperature Ref. : DSCHA70129082- 23 March 09 6/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7012 Temperatures: -40°C; 20°C;+80°C Vc=7.5V Pulse= 100µs, Duty cycle 20% 40 35 ICTRL (mA) 30 25 20 +80°C 15 +20°C -40°C 10 5 0 0 1 2 3 4 5 6 Collector current control versus VCTRL (V) control voltage & temperature Collector current control versus control voltage and temperature Temperatures: -40°C; 20°C; +80°C Vc=7.5V Pulse= 100µs, Duty cycle20% 1.2 TTL input current versus TTL voltage and temperature 1 I TTL (mA) 0.8 0.6 +80°C +80°C +20°C 0.4 +20°C -40°C -40°C 0.2 0 0 1 2 3 4 5 6 V TTL( V) TTL input current versus TTL voltage and temperature Ref. : DSCHA70129082- 23 March 09 7/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7012 Chip Mechanical Data and Pin references 2 3 4 22 21 20 5 6 7 19 18 17 8 9 10 11 16 15 14 13 Chip thickness = 100µm +/- 10 µm RF pads (1, 12) = 96 x 196µm² DC pads (2, 3, 4, 5, 9,15, 19, 20, 21, 22) = 96 x 96µm² DC pads (7, 17) = 192 x 96µm² DC pads (11, 13) = 288 x 96µm² Pin number 1 8, 16 5, 9, 15, 19 2, 22 4, 20 6, 10, 14, 18 3, 7, 11, 13, 17, 21 12 Ref. : DSCHA70129082- 23 March 09 Pin name IN Vctrl TI TO GND V,Vc1,Vc2 OUT Description Input RF NC Collector current control voltage TTL input TTL output Ground (NC) Power supply voltage Output RF 8/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7012 Bonding recommendations For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF, DC and modulation port inter-connections should be done according to the following table: Port Connection IN (1) Inductance (Lbonding) = 0.3nH 400µm length with wire diameter of 25 µm OUT (12) Inductance (Lbonding) = 0.3nH 400µm length with wire diameter of 25 µm DC pads to 1st decoupling level for double bonding DC pads to 1st decoupling level for single bonding st 1 decoupling level to 2nd decoupling level for double bonding 1st decoupling level to 2nd decoupling level for single bonding Inductance (Lbonding) =0.7nH Two 1.2mm length wires with a diameter of 25 µm Inductance (Lbonding) =1nH One 1.2mm length wires with a diameter of 25 µm Inductance (Lbonding) =0.7nH Two 1.2mm length wires with a diameter of 25 µm Inductance (Lbonding) =1nH One 1.2mm length wires with a diameter of 25 µm Assembly recommendations in test fixture (using TTL circuits) Vc* TI* IN 100pF OUT Non capacitive pad 10nF 1µF TI* Vc* 100µF * Performances obtained with the same accesses connected to the same supply Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred. Ref. : DSCHA70129082- 23 March 09 9/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice X-band High Power Amplifier CHA7012 Assembly recommendations in test fixture (using analog biasing circuits) Vc Vctrl IN OUT 100pF 10nF 1µF Vctrl 100µF Vc Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred. Ordering Information Chip form : CHA7012-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA70129082- 23 March 09 10/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice