UMS CHA7012-99F X-band hbt high power amplifier Datasheet

CHA7012
RoHS COMPLIANT
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
TI Vc
Main Features
Frequency band: 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing circuit
Chip size: 5.00 x 3.68 x 0.1mm
Vctrl
TTL
Circuit
Vc Vc
Biasing
Circuit
IN
OUT
Biasing
Circuit
TTL
Circuit
TI Vc
Vctrl Vc
TO
Vc
44
Pout & [email protected] , Linear Gain
The CHA7012 chip is a monolithic two-stage
GaAs high power amplifier designed for X band
applications.
This device is manufactured using a GaInP
HBT process, including, via holes through the
substrate and air bridge. A nitride layer protects
the transistors and the passive components.
Special
heat
removal
techniques
are
implemented to guarantee high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and DC
grounded
-bond pads and back side are gold plated for
compatibility with eutectic die attach method
and thermosonic or thermo compression
bonding process.
TO
[email protected] (%)
40
[email protected](dBm
36
32
28
Linear Gain (Pin=0dBm)
24
20
16
9
9.2
9.4
9.6
9.8
10
10.2
10.4
10.6
Frequency ( GHz)
Pout & PAE @3dBc and Linear Gain @ 25°C
Main Characteristics
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Unit
10.4
GHz
Fop
Operating frequency range
Psat
Saturated output power @ 25°C
9
W
P_3dBc
Output power @ 3dBc @ 25°C
7
W
G
Small signal gain @ 25°C
Operating temperature range
20
dB
°C
Top
9.2
Max
-40
+80
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70129082- 23 March 09
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA7012
Electrical Characteristics
Tamb = 20°C, Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Max
Unit
Operating frequency
9.2
10.4
GHz
G
Small signal gain
17.5
20
23
dB
G_T
Small signal gain variation versus
-0.025
dB/°C
temperature
RLin
Input Return Loss
8
10
dB
RLout
Output Return Loss
8
12
dB
Psat
Saturated output power
39.5
dBm
Psat_T
Saturated output power variation versus
-0.01
dB/°C
temperature
P_3dBc
Output power @ 3dBc (3)
38
38.5
dBm
PAE_3dBc
Power Added Efficiency @ 3dBc
34
38
%
Vc
Power supply voltage (3)
7.5
8
V
Ic
Power supply quiescent current (1)
1.9
A
TI
TTL input voltage
0
5
V
I_TI
TTL input current
1
mA
Vctrl
Collector control voltage
5
V
Zctr
Vctrl input port impedance (2)
350
Ohm
Top
Operating temperature range
-40
+80
°C
(1) Parameter tunable by Vctrl when control biasing circuit used.
(2) This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18)
(3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Fop
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vc
Ic
Ic_sat
Vctrl
Tj
Tstg
Parameter
Compression level (2)
Power supply voltage with RF
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Maximum junction temperature
Storage temperature range
Values
6
8
2.8
3.5
6.5
175
-55 to +125
Unit
dBc
V
A
A
V
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) For higher compression the level limit can be increased by decreasing the voltage Vc using
the rate 0.5 V / dBc
Equivalent Thermal resistance to Backside: 6°C/W
Ref. : DSCHA70129082- 23 March 09
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7012
Typical measured characteristics
Measurements on Jig
Vc=7.5V, VTTL=5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
30
28
Linear gain (dB)
26
24
22
20
18
16
+20°C
+80°C
-40°C
14
12
10
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Linear gain versus frequency and temperature
42
41
40
Pout (dBm)
39
38
37
+20°C
+80°C
-40°C
36
35
34
33
32
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Output Power @ 3dBc versus frequency and temperature
Ref. : DSCHA70129082- 23 March 09
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7012
50
45
PAE (%)
40
35
30
+20°C
+80°C
-40°C
25
20
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9 10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
PAE @ 3dBc versus frequency and temperature
3
2.9
2.8
2.7
Ic (A)
2.6
2.5
2.4
+20°C
+80°C
-40°C
2.3
2.2
2.1
2
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9 10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Ic @ 3dBc versus frequency and temperature
Ref. : DSCHA70129082- 23 March 09
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Specifications subject to change without notice
X-band High Power Amplifier
CHA7012
40
38
Pout (dB)
36
34
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
32
30
28
26
-1
0
1
2
3
4
5
6
7
8
Compression (dB)
Output Power @ 25°C versus compression and frequenc y
50
45
40
PAE (%)
35
30
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
25
20
15
10
5
0
-1
0
1
2
3
4
5
6
7
8
Compression (dB)
PAE @ 25°C versus compression and frequency
Ref. : DSCHA70129082- 23 March 09
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7012
3
2.9
2.8
2.7
Ic (A)
2.6
2.5
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
2.4
2.3
2.2
2.1
2
-1
0
1
2
3
4
5
6
7
8
Compression (dB)
Ic (A)
Collector current @ 25°C versus compression and fr equency
Temperatures: -40°C; 20°C; +80°C Vc=7.5V Pul se= 100µs, Duty cycle 20%
3.0
2.8
Vctrl
2.6
2.4
TTL Input Voltage
2.2
2.0
+80 °C
1.8
20 °C
1.6
20 °C
1.4
1.2
+80 °C
-40 °C
1.0
-40 °C
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
TI/Vctrl (V)
Collector quiescent current versus TI & Vctrl and temperature
Ref. : DSCHA70129082- 23 March 09
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7012
Temperatures: -40°C; 20°C;+80°C
Vc=7.5V Pulse= 100µs, Duty cycle 20%
40
35
ICTRL (mA)
30
25
20
+80°C
15
+20°C
-40°C
10
5
0
0
1
2
3
4
5
6
Collector current control
versus
VCTRL
(V) control voltage & temperature
Collector current control versus control voltage and temperature
Temperatures: -40°C; 20°C; +80°C
Vc=7.5V Pulse= 100µs, Duty cycle20%
1.2
TTL input current versus TTL voltage and temperature
1
I TTL (mA)
0.8
0.6
+80°C
+80°C
+20°C
0.4
+20°C
-40°C
-40°C
0.2
0
0
1
2
3
4
5
6
V TTL( V)
TTL input current versus TTL voltage and temperature
Ref. : DSCHA70129082- 23 March 09
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Specifications subject to change without notice
X-band High Power Amplifier
CHA7012
Chip Mechanical Data and Pin references
2 3 4
22 21 20
5
6
7
19 18
17
8
9 10
11
16 15 14
13
Chip thickness = 100µm +/- 10 µm
RF pads (1, 12) = 96 x 196µm²
DC pads (2, 3, 4, 5, 9,15, 19, 20, 21, 22) = 96 x 96µm²
DC pads (7, 17) = 192 x 96µm²
DC pads (11, 13) = 288 x 96µm²
Pin number
1
8, 16
5, 9, 15, 19
2, 22
4, 20
6, 10, 14, 18
3, 7, 11, 13, 17, 21
12
Ref. : DSCHA70129082- 23 March 09
Pin name
IN
Vctrl
TI
TO
GND
V,Vc1,Vc2
OUT
Description
Input RF
NC
Collector current control voltage
TTL input
TTL output
Ground (NC)
Power supply voltage
Output RF
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7012
Bonding recommendations
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF, DC and modulation port inter-connections should be done according to the following
table:
Port
Connection
IN (1)
Inductance (Lbonding) = 0.3nH
400µm length with wire diameter of 25 µm
OUT (12)
Inductance (Lbonding) = 0.3nH
400µm length with wire diameter of 25 µm
DC pads to 1st decoupling level
for double bonding
DC pads to 1st decoupling level
for single bonding
st
1 decoupling level to 2nd
decoupling level for double
bonding
1st decoupling level to 2nd
decoupling level for single
bonding
Inductance (Lbonding) =0.7nH
Two 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =1nH
One 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =0.7nH
Two 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =1nH
One 1.2mm length wires with a diameter of 25 µm
Assembly recommendations in test fixture (using TTL circuits)
Vc*
TI*
IN
100pF
OUT
Non capacitive pad
10nF
1µF
TI*
Vc*
100µF
* Performances obtained with the same accesses connected to the same supply
Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred.
Ref. : DSCHA70129082- 23 March 09
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA7012
Assembly recommendations in test fixture
(using analog biasing circuits)
Vc
Vctrl
IN
OUT
100pF
10nF
1µF
Vctrl
100µF
Vc
Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred.
Ordering Information
Chip form
:
CHA7012-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S.
assumes no responsibility for the consequences of use of such information nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied.
United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life
support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA70129082- 23 March 09
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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