MA-COM AM42-0007-DIE Gaas mmic power amplifier, 2 w 14.0 - 14.5 ghz Datasheet

AM42-0007-DIE
GaAs MMIC Power Amplifier, 2.0 W
14.0 - 14.5 GHz
Functional Schematic
Features
•
•
•
•
•
•
•
Rev. V6
High Linear Gain: 22 dB Typical.
High Saturated Output Power: +33 dBm Typical
High Power Added Efficiency: 22% Typical
High P1dB: +32 dBm Typical
50 Ω Input / Output Broadband Matched
Integrated Output Power Detector
High Performance Ceramic Bolt Down Package
Description
The AM42-0007-DIE is a three stage MMIC linear
power amplifier fabricated on a mature 0.5 micron
MBE based GaAs process. The AM42-0007-DIE
employs a fully matched chip with integral bias
networks and output power detector.
This GaAs MMIC power amplifier is ideally suited for
used as an output stage or driver in applications for
VSAT applications.
Typical Bias Configuration 3,4
Ordering Information
Part Number
Package
AM42-0007-DIE
DIE
Absolute Maximum Ratings 1,2
Parameter
Absolute Maximum
VDD
+12 Volts
VGG
-10 Volts
Power Dissipation
17.9 W
RF Input Power
+23 dBm
ChannelTemperature
+150 °C
Storage Temperature
-65 °C to +150 °C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. Back of die temperature (TB) = +25°C.
3. Nominal bias is obtained by first connecting –5 volts to pin VGG
(resistor network used) followed by connecting +9 volts to pin
VDD. Note sequence.
4. It is recommended that the die be mounted with Au/Sn eutectic
performs for good RF ground and thermal interface.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
AM42-0007-DIE
GaAs MMIC Power Amplifier, 2.0 W
14.0 - 14.5 GHz
Rev. V6
Electrical Specifications 5: TB = +25°C , VDD = +9 V, VGG = -1.2V, Z0 = 50 Ω
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
PIN < 0 dBm
dB
—
22
—
Input VSWR
—
Ratio
—
2.5:1
—
Output VSWR
—
Ratio
—
2.7:1
—
Saturated Output Power
PIN < +14 dBm
dBm
—
+33
—
Output Power @ 1 dB Compression
—
dBm
31
+32
—
Output IP3
—
dBm
—
41
—
Power Added Efficiency (PAE)
PIN < +14 dBm
%
—
22
—
Bias Current
IDSQ (No RF)
IGG (No RF)
mA
mA
—
850
0.1
—
Thermal Resistance
θ CB26
°C/W
—
7
—
Detector Output Voltage (VDET)
Pin = +3 dBm, Ids = 750 mA Typ.
V
—
+3.5
—
5. 100% on wafer tested (50 µs pulse width, 20% duty factor) without resistor network on gates.
6. Channel to die backside.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
AM42-0007-DIE
GaAs MMIC Power Amplifier, 2.0 W
14.0 - 14.5 GHz
Rev. V6
Typical Performance @ 25°C
Linear Gain vs. Frequency
Input & Output Return Loss vs. Frequency
0
30
S11
S22
20
-5
10
-10
0
-15
-10
-20
12
13
14
15
16
17
12
13
14
15
16
17
Frequency (GHz)
Frequency (GHz)
Power Added Efficiency vs. Input Power @ 14 GHz
Output Power vs. Input Power @ 14 GHz
35
50
33
40
31
30
29
20
27
10
0
25
4
6
8
10
12
4
14
6
50
34
40
33
30
32
20
31
10
14.1
14.3
Frequency (GHz)
12
14
PAE vs. Frequency @ PIN = +14 dBm
35
13.9
10
IN
Output Power vs. Frequency @ PIN = +14 dBm
30
13.7
8
P (dBm)
Input Power (dBm)
14.5
14.7
0
13.7
13.9
14.1
14.3
14.5
14.7
Frequency (GHz)
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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