BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Package is Available* 2 BASE MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25 Vdc Collector −Base Voltage VCBO 50 30 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD 625 5.0 1.5 12 Operating and Storage Junction Temperature Range MARKING DIAGRAM mW mW/°C BC33 xxxx YWW W mW/°C °C TJ, Tstg −55 to +150 Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 °C/W THERMAL CHARACTERISTICS Characteristic 3 EMITTER Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TO−92 (TO−226) CASE 29 xxxx Y WW = Specific Device Code = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 4 1 Publication Order Number: BC337/D BC337, BC337−16, BC337−25, BC337−40, BC338−25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 25 − − − − S 50 30 − − − − V(BR)EB 5.0 − − − − − − 100 100 − − − − 100 100 − − 100 100 100 160 250 60 − − − − − 630 250 400 630 − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) BC338 BC337 V(BR)CE Collector −Emitter Breakdown Voltage (IC = 100 A, IE = 0) BC338 BC337 O Vdc V(BR)CE Emitter −Base Breakdown Voltage (IE = 10 A, IC = 0) Vdc Vdc O Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 ICBO Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 nAdc ICES Emitter Cutoff Current (VEB = 4.0 V, IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337−16 BC337−25/BC338−25 BC337−40 (IC = 300 mA, VCE = 1.0 V) − Base−Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) VBE(on) − − 1.2 Vdc Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 Vdc Cob − 15 − pF fT − 210 − MHz SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.01 0.001 JC(t) = (t) JC JC = 100°C/W MAX JA(t) = r(t) JA JA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) JC(t) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 Figure 1. Thermal Response http://onsemi.com 2 2.0 5.0 10 20 50 100 BC337, BC337−16, BC337−25, BC337−40, BC338−25 1.0 s 1.0 ms 1000 TJ = 135°C 100 s hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 1000 dc TC = 25°C dc TA = 25°C 100 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR−EMITTER VOLTAGE VCE = 1 V TJ = 25°C 100 10 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (MA) Figure 3. DC Current Gain 1.0 1.0 TJ = 25°C TA = 25°C 0.8 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 2. Active Region − Safe Operating Area 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 100 1 Figure 4. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. “On” Voltages 100 +1 VC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) 1000 0 −1 VB for VBE −2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 6. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 3 100 BC337, BC337−16, BC337−25, BC337−40, BC338−25 ORDERING INFORMATION Package Marking Shipping† BC337 TO−92 7 5000 Units / Bulk BC337RL1 TO−92 7 2000 / Tape & Reel BC337ZL1 TO−92 7 2000 / Tape & Ammunition BC337−16 TO−92 7−16 5000 Units / Bulk BC337−16RL1 TO−92 7−16 2000 / Tape & Reel BC337−16ZL1 TO−92 7−16 2000 / Tape & Ammunition BC337−25 TO−92 7−25 5000 Units / Bulk BC337−25RL1 TO−92 7−25 2000 / Tape & Reel BC337−25ZL1 TO−92 7−25 2000 / Tape & Ammunition TO−92 (Pb−Free) 8−25 2000 / Tape & Ammunition BC337−40 TO−92 7−40 5000 Units / Bulk BC337−40RL1 TO−92 7−40 2000 / Tape & Reel BC337−40ZL1 TO−92 7−40 2000 / Tape & Ammunition BC338−25ZL1 TO−92 8−25 2000 / Tape & Ammunition Device BC337−25ZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BC337, BC337−16, BC337−25, BC337−40, BC338−25 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER N http://onsemi.com 5 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− BC337, BC337−16, BC337−25, BC337−40, BC338−25 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. BC337/D