DB101S THRU DB107S HD DB50 DBS Plastic-Encapsulate Bridge Rectifier Features ●Io 1A DBS ●VRRM 50V-1000V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● General purpose 1 phase Bridge rectifier applications Marking ● DB10XS X : From 1 To 7 Item Symbol Unit Conditions DB1 01S 02S 03S 04S 05S 06S 07S Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Maximum RMS Voltage V RMS V 35 Average Rectified Output Current IO A Surge(Nonrepetitive)Forward Current IFSM A Current Squared Time 70 140 280 420 560 700 Ta=25℃ On glass-epoxi substrate 60Hz sine wave, R-load ,Ta=25℃ 60HZ sine wave, 1 cycle, Tj=25℃ A2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode I2t 1 30 3.7 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55 ~+150 Electrical Characteristics（Ta =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage VFM V IFM=0.5A, Pulse measurement, Rating of per diode 1.05 Peak Reverse Current IRRM μA VRM=VRRM , Pulse measurement, Rating of per diode 10 Between junction and ambient, On glass-epoxi substrate 68 Between junction and lead 15 RθJ-A ℃/W Thermal Resistance RθJ-L High Diode Semiconductor 1 Typical Characteristics FIG2:Surge Forward Current Capadility 1.0 35 sine wave IFSM IFSM(A) Io(A) FIG1:Io-Ta Curve 1.2 0 30 8.3ms 8.3ms 1cycle 25 0.8 sine wave R-load free in air 0.6 non-repetitive Tj=25℃ 20 15 0.4 10 0.2 0 5 0 0 40 80 120 160 Ta(℃ ) IR(uA) IF(A) FIG3: Forward Voltage 1 6 4 5 2 10 20 50 100 Number of Cycles FIG4:Typical Reverse Characteristics 100 Tj=150℃ 2 10 1 0.5 1.0 Ta=25℃ 0.1 Tj=25℃ 0.1 0.05 0.02 0.01 0.01 0.4 0.6 0.8 1.0 1.2 1.4 VF(V) 0 20 40 High Diode Semiconductor 60 80 100 Voltage(%) 2 DBS .013(0.33) .0088(0.22) .060(1.53) .040(1.02) - + .013(0.33) .003(0.076) .255(6.5) .404(10.3) .245(6.2) .378(9.60) ~ ~ .083(2.10) .071(1.80) .205(5.2) .195(5.0) .335(8.51) .320(8.13) 45° .130(3.30) .110(2.80) .047(1.20) .040(1.02) Dimensions in inches and (millimeters) DBS 0.202 (5.12) 0.344 (8.73) 0.087 (2.22) 0.047 (1.20) JSHD JSHD High Diode Semiconductor 3