Kexin AO3423-HF P-channel mosfet Datasheet

MOSFET
SMD Type
P-Channel MOSFET
AO3423-HF (KO3423-HF)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
Features
1
0.55
● RDS(ON) ≤ [email protected] (VGS = -4.5V)
● RDS(ON) ≤ [email protected] (VGS = -2.5V)
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● VDS (V) = -20V
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
+0.05
0.1 -0.01
1. Gate
2. Source
+0.1
0.38 -0.1
0-0.1
+0.1
0.97 -0.1
Pb−Free Lead Finish
3. Drain
D
G
S
■ Absolute
Features Maximum Ratings Ta = 25 ℃
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current (TJ=150℃) *2 TA=25℃
TA=70℃
ID
Pulsed Drain Current *1
IDM
Continuous Source Current (diode conduction) *2
Power Dissipation *2
TA=25 ℃
TA=70 ℃
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
Maximum Junction-to-Ambient *3
-2.4
-1.9
-2.2
-1.8
-10
A
A
IS
-0.72
-0.6
A
PD
0.9
0.57
0.7
0.45
W
TJ,Tstg
RthJA
-55 to +150
145
175
℃
℃ /W
* 1. Pulse width limited by maximum junction temperature.
* 2. Surface Mounted on FR4 Board, t ≤ 5 sec.
* 3. Surface Mounted on FR4 Board.
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MOSFET
SMD
SMD Type
Type
P-Channel MOSFET
AO3423-HF (KO3423-HF)
■ Electrical
Features Characteristics Ta = 25 ℃
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-State Resistance *
rDS(on)
VDS = VGS, ID = -250 uA
Min
Typ
Max
-20
-0.45
-0.95
VDS = 0 V, VGS = ± 8 V
± 100
VDS = -20 V, VGS = 0 V
-1
VDS = -20 V, VGS = 0 V, TJ = 55
-10
VDS ≤ -5 V, VGS = -4.5 V
-6
VDS ≤ -5 V, VGS = -2.5 V
-3
VGS = -4.5 V, ID = -2.8 A
0.10
VGS = -2.5 V, ID = -2.0 A
0.15
gfs
VDS = -5 V, ID = -2.8 A
6.5
Diode Forward Voltage *
VSD
IS = -0.75 A, VGS = 0 V
-0.8
-1.2
4.5
10
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -6V ,VGS = -4.5 V , ID= -2.8 A
Ciss
Reverse Transfer Capacitance
Crss
65
td(on)
20
30
tr
40
60
30
45
20
30
tf
■ Marking
Marking
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N01* F
uA
Ω
V
1.1
Coss
* Pulse test: PW ≤ 300 u s du ty cycle ≤ 2%.
nA
nC
0.7
Output Capacitance
Turn-Off Time
V
S
Input Capacitance
td(off)
Unit
A
Forward Transconductance *
Turn-On Time
2
Test conditions
V(BR)DSS VGS = 0 V, ID = -250 uA
375
VDS = -6V ,VGS = 0 , f = 1 MHz
VDD = -6V , RL = 6 Ω ,
ID = -1A , VGEN =- 4.5V , RG = 6 Ω
pF
95
ns
IC
MOSFET
SMD
SMD Type
Type
P-Channel MOSFET
AO3423-HF (KO3423-HF)
■ Typical Characteristics
Ou t p u t Ch ar ac t er i s t i c s
10
V GS = 5 thru 2.5 V
TC = - 55 C
8
I D - Drain Current (A)
I D - Drain Current (A)
8
Tr an s f er Ch ar ac t er i s t i c s
10
2 V
6
4
1.5 V
2
25 C
125 C
6
4
2
1 V
0
0
1
2
3
4
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.5
2.0
2.5
3.0
Capacitance
800
0.4
C - Capacitance (pF)
r DS(on)- On-Resistance (
)
0.5
0.3
0.2
V GS = 2.5 V
600
C iss
400
200
C oss
0.1
V GS = 4.5 V
0.0
C rss
0
0
2
4
6
8
0
10
4
Gate Charge
5
8
12
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
1.6
V DS = 10 V
ID = 2.8 A
On-Resistance vs. Junction Temperature
V GS = 4.5 V
I D = 2.8 A
1.4
)
4
r DS(on)- On-Resistance (
(Normalized)
V GS - Gate-to-Source Voltage (V)
1.0
VGS - Gate-to-Source Voltage (V)
3
2
1
0
0
1
2
3
Qg - Total Gate Charge (nC)
4
5
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature ( C)
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SMD Type
MOSFET
P-Channel MOSFET
AO3423-HF (KO3423-HF)
■ Typical Characterisitics
Source-Drain Diode Forward V oltage
10
On-Resistance vs. Gate-to-Source
0.6
Voltage
T J = 150 C
r DS(on)- On-Resistance (
I S - Source Current (A)
)
0.5
1
T J = 25 C
0.4
I D = 2.8 A
0.3
0.2
0.1
0.0
0.1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
Threshold V oltage
4
5
Single Pulse Power
10
0.3
8
Power (W)
0.2
I D = 250 A
0.1
6
4
0.0
T A = 25 C
2
- 0.1
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
TJ - Temperature ( C )
Safe Operating Area
10 s
100 s
I D - Drain Current (A)
10
1 ms
1
10 ms
T A = 25 C
Single Pulse
100 ms
0.1
dc, 100 s, 10 s, 1 s
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
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1
10
Time (sec)
100
4
3
VGS - Gate-to-Source Voltage (V)
0.4
V GS(th) Variance (V)
2
100
100
1000
SMD Type
MOSFET
■ Typical Characterisitics
P-Channel MOSFET
AO3423-HF (KO3423-HF)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P DM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA= 62.5 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
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