Fairchild FDZ391P P-channel 1.5 v powertrenchâ® thin wl-csp mosfet Datasheet

FDZ391P
P-Channel 1.5 V PowerTrench® Thin WL-CSP MOSFET
-20 V, -3 A, 85 mΩ
Features
tm
General Description
„ Max rDS(on) = 85 mΩ at VGS = -4.5 V, ID = -1 A
Designed on Fairchild's advanced 1.5 V PowerTrench process
with state of the art "low pitch" Thin WLCSP packaging process,
the FDZ391P minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
„ Max rDS(on) = 123 mΩ at VGS = -2.5 V, ID = -1 A
„ Max rDS(on) = 200 mΩ at VGS = -1.5 V, ID = -1 A
„ Occupies only 1.5 mm2 of PCB area
„ Ultra-thin package: less than 0.4 mm height when mounted
to PCB
Applications
„ RoHS Compliant
„ Battery management
„ Load switch
„ Battery protection
Pin 1
S
S
S
D
G
G
S
D
D
TOP
BOTTOM
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-20
Units
V
±8
V
-3
-15
Power Dissipation
TA = 25 °C
(Note 1a)
1.9
Power Dissipation
TA = 25 °C
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
65
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
133
°C/W
Package Marking and Ordering Information
Device Marking
6
Device
FDZ391P
©2008 Fairchild Semiconductor Corporation
FDZ391P Rev.B
Package
WL-CSP Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
September 2008
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
-20
V
-12
mV/°C
-1
µA
±100
nA
-1.5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 µA, referenced to 25 °C
-0.4
-0.6
2
mV/°C
VGS = -4.5 V, ID = -1 A
74
85
VGS = -2.5 V, ID = -1 A
90
123
VGS = -1.5 V, ID = -1 A
140
200
100
123
rDS(on)
Drain to Source On Resistance
ID(on)
On to State Drain Current
VGS = -4.5 V, VDS = - 5 V
gFS
Forward Transconductance
VDS = -5 V, ID = -1 A
VGS = -4.5 V, ID = -1 A TJ = 125 °C
mΩ
-10
A
7
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
800
1065
pF
155
205
pF
90
135
pF
Ω
f = 1 MHz
9
11
20
ns
VDD = -10 V, ID = -1 A
VGS = -4.5 V, RGEN = 6 Ω
10
20
ns
50
80
ns
30
48
ns
9
13
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VGS = -4.5 V
VDD = -10 V
ID = -1 A
1
nC
2
nC
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -1.1 A
-1.1
(Note 2)
IF = -1 A, di/dt = 100 A/µs
-0.7
A
-1.2
V
21
ns
5
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 65 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 133 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDZ391P Rev.B
2
www.fairchildsemi.com
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
2.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
16
-ID, DRAIN CURRENT (A)
14
VGS = -2.0 V
12
VGS = -4.5 V
10
VGS = -3.5 V
8
VGS = -2.5 V
6
4
VGS = -1.5 V
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
2
0
0
0.5
VGS = -2.5 V
1.4
1.0
VGS = -4.5 V
0.8
0
2
4
6
8
10
-ID, DRAIN CURRENT(A)
12
14
16
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
240
1.5
ID = -1 A
VGS = -4.5 V
1.4
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -3.5 V
1.2
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
Figure 3. Normalized On Resistance
vs Junction Temperature
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
12
VDD = -5 V
9
6
TJ = 125 oC
TJ = 25 oC
3
TJ = -55 oC
0
0.5
ID = - 0.5 A
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
200
160
120
TJ = 125 oC
80
TJ = 25 oC
40
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance vs Gate to
Source Voltage
15
-ID, DRAIN CURRENT (A)
PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX
VGS = -2.0 V
1.6
Figure 1. On Region Characteristics
60
VGS = 0 V
10
1
TJ = 125 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0001
1.0
1.5
2.0
-VGS, GATE TO SOURCE VOLTAGE (V)
0
2.5
Figure 5. Transfer Characteristics
FDZ391P Rev.B
VGS = -1.5 V
1.8
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
5
2000
ID = -1 A
1000
4
3
CAPACITANCE (pF)
VDD = -5 V
VDD = -10 V
2
VDD = -15 V
1
2
4
6
8
10
Coss
100
f = 1 MHz
VGS = 0 V
50
0.1
0
0
Ciss
12
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
-IS, SOURCE1 TO SOURCE2 CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
2
VGS = - 2.5 V
1
o
RθJA = 65 C/W
0
25
50
75
100
125
20
Figure 8. Capacitance vs Drain
to Source Voltage
4
3
Crss
150
o
TA, CASE TEMPERATURE ( C)
30
10
100 us
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
0.1
10 s
DC
RθJA = 133 oC/W
o
TA = 25 C
0.01
0.1
1
60
10
-VS, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 9. Maximum Continuous Drain
Current vs Ambient Temperature
Figure 10. Forward Bias Safe
Operating Area
P(PK), PEAK TRANSIENT POWER (W)
50
10
VGS = -10 V
SINGLE PULSE
RθJA = 133 oC/W
o
TA = 25 C
1
0.5
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
FDZ391P Rev.B
4
www.fairchildsemi.com
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 133 C/W
0.01
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
1000
Figure 12. Transient Thermal Response Curve
FDZ391P Rev.B
5
www.fairchildsemi.com
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Dimensional Outline and Pad Layout
FDZ391P Rev.B
6
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Rev. I36
FDZ391P Rev.B
7
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FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
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