JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Diode DAN222M SWITCHING DIODE SOT-723 FEATURES z Ultra Small Surface Mounting Type z Ultra High Speed Switching Applications z High Reliability MARKING: N N MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VRRM Peak Reverse Voltage 80 V VRWM Working Peak Reverse Voltage 80 V RMS Reverse Voltage 56 V IO Continuous Forward Current 100 mA IFM Peak Forward Current 300 mA IFSM Non-Repetitive Peak Forward Surge Current (t=1µs) 4 A PD Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ VR(RMS) RθJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) Reverse current IR VR=70V 0.1 µA Forward voltage VF IF=100mA 1.2 V Total capacitance Ctot VR=6V,f=1MHz 3.5 pF 4 ns Reverse recovery time www.cj-elec.com trr IR=100uA 80 IF= IR=5mA, VR=6V,RL=50Ω 1 V B,Oct,2014 Typical Characteristics Reverse 100 Characteristics 1000 (nA) REVERSE CURRENT IR 25 C a a T= 10 0 C 10 T= FORWARD CURRENT IF (mA) 300 1 Ta=100C 100 30 10 Ta=25C 3 0.1 0.0 1 0.4 0.8 FORWARD VOLTAGE 1.2 VF 1.6 0 20 (V) 40 REVERSE VOLTAGE 60 VR 80 (V) Power Derating Curve Capacitance Characteristics 200 1.4 Ta=25C (mW) 150 PD 1.3 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 1.2 1.1 100 50 0 1.0 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 0 20 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (C) B,Oct,2014 SOT-723 Package Outline Dimensions Symbol A A1 b b1 c D E E1 e θ Dimensions In Millimeters Min. Max. 0.430 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Dimensions In Inches Min. Max. 0.017 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. SOT-723 Suggested Pad Layout www.cj-elec.com 2 B,Oct,2014 SOT-723 Tape and Reel www.cj-elec.com 3 B,Oct,2014