AG303-63 InGaP HBT Gain Block Product Features DC – 6000 MHz 20.5 dB Gain @ 900 MHz +14 dBm P1dB @ 900 MHz +26 dBm OIP3 @ 900 MHz Single Voltage Supply Internally matched to 50 Robust 1000V ESD, Class 1C Lead-free/green/RoHS-compliant SOT-363 package Applications Product Description The AG303-63 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG303-63 typically provides 20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 C and is housed in a lead free/green/RoHS-compliant SOT-363 industry standard SMT package. GND 1 6 RF OUT GND 2 5 GND RF IN 3 4 GND Function Input Output/Bias Ground The AG303-63 consists of a Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. Pin No. 3 6 1, 2, 4, 5 The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG303-63 will work for other various applications within the DC to 6 GHz frequency range such as CATV and WiMAX. Mobile Infrastructure CATV / FTTX WLAN / ISM RFID WiMAX / WiBro Specifications (1) Parameter Functional Diagram Typical Performance (1) Units Min MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA DC Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Output IP2 Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Device Voltage Device Current 17.3 Typ 900 20.5 21 24 +14 +25.8 +34 3.2 1900 18.3 +12.6 +25.3 4.23 35 Max Parameter 6000 Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Units MHz dB dB dB dBm dBm dB Typical 500 21.1 -20 -25 +14.0 +26.1 3.1 900 20.5 -21 -24 +14.0 +25.8 3.2 1900 18.3 -20 -19 +12.6 +25.3 3.4 2140 17.7 -20 -18 +12.2 +24.9 3.4 19.3 1. Test conditions:. T = 25 ºC, Supply Voltage = +5 V, Rbias = 22.1 , 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Storage Temperature DC Voltage RF Input Power (continuous) Thermal Resistance, Rth -55 to +125 C +4.5 V +10 dBm For 106 hours MTTF Junction Temperature 350 C/W +177 C Ordering Information Part No. Description AG303-63G InGaP HBT Gain Block AG303-63PCB 700 – 2400 MHz Fully Assembled Eval. Board (lead-free/green/RoHS-compliant SOT-363 Package) Standard tape / reel size = 3000 pieces on a 7” reel Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 1 of 5 August 2009 AG303-63 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 V, Rbias = 22.1 Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm DB 100 21.4 -23 -20 +14.0 +26.3 3.1 500 21.1 -20 -25 +14.0 +26.1 3.1 900 20.5 -21 -24 +14.0 +25.8 3.2 , Icc = 35 mA 1900 18.3 -20 -19 +12.6 +25.3 3.4 2140 17.7 -20 -18 +12.2 +24.9 3.4 2400 17.1 -20 17 +12.1 +24.2 3.5 3500 15.1 -21 -16 +9.8 5800 11.4 -20 -11 1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss 22 -20 -30 14 +25 C S11 +85 C 1 2 Frequency (GHz) 3 1 2 3 4 5 35 20 4 30 -40C +25C 2.5 200 -40 C 400 600 800 0.5 15 18 Gain (dB) 20 10 20 18 16 16 Gain 16 12 14 8 12 4 0.5 1 1.5 2 2.5 3 3.5 4 0 -20 -16 Frequency (GHz) -12 -8 -4 Input Power (dBm) 1.5 2 2.5 3 16 12 Gain 14 8 12 4 10 0 Output Power 10 0 1 frequency = 2000 MHz Output Power 0 +85 C Output Power / Gain vs. Input Power frequency = 900 MHz 5 +85 C +25 C Frequency (GHz) Output Power / Gain vs. Input Power 20 +25 C 0 1000 Frequency (MHz) Frequency (GHz) P1dB vs. Frequency -40 C 2 0 0 3 3 1 +85C Output Power (dBm) 2 4.5 Noise Figure vs. Frequency 20 1.5 4.0 5 +85 C 10 1 3.5 Device Voltage (V) 25 15 0.5 3.0 6 NF (dB) 25 OIP2 (dBm) OIP3 (dBm) 40 0 10 Output IP2 vs. Frequency 30 +25 C 20 Frequency (GHz) Output IP3 vs. Frequency -40 C 30 0 0 4 Optimal operating point 40 -40 12 0 S22 Gain (dB) -40 C 50 Output Power (dBm) 16 Device Current (mA) 18 60 -10 S11, S22 (dB) Gain (dB) 20 P1dB (dBm) I-V Curve 0 0 4 8 -4 -20 -16 -12 -8 -4 Input Power (dBm) 0 4 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 2 of 5 August 2009 AG303-63 InGaP HBT Gain Block Typical Device RF Performance (cont’d) Supply Bias = +6 V, Rbias = 51 OIP3 (dBm) 20 18 16 Output IP2 vs. Frequency 30 40 25 35 OIP2 (dBm) 22 Gain (dB) , Icc = 35 mA Output IP3 vs. Frequency Gain vs. Frequency 20 25 15 14 -40 C -40 C +25 C +85 C 0 1 2 Frequency (GHz) +25 C -40c +85 C 3 0 4 0.5 1 1.5 2 2.5 +85c 0 3 200 400 600 800 1000 Frequency (MHz) Frequency (GHz) Noise Figure vs. Frequency P1dB vs. Frequency 5 20 4 15 NF (dB) P1dB (dBm) +25c 20 10 12 30 10 5 -40 C +25 C 3 2 1 +85 C -40 C +25 C +85 C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0.5 1 Frequency (GHz) 1.5 2 2.5 3 Frequency (GHz) Typical Device RF Performance Supply Bias = +8 V, Rbias = 108 Gain vs. Frequency OIP3 (dBm) 20 18 16 Output IP2 vs. Frequency 30 40 25 35 OIP2 (dBm) 22 Gain (dB) , Icc = 35 mA Output IP3 vs. Frequency 20 15 14 -40 C +25 C 1 2 Frequency (GHz) +25 C +85 C 3 +25c +85c 20 0 4 0.5 1 1.5 2 2.5 3 0 200 Frequency (GHz) 400 600 800 1000 Frequency (MHz) Noise Figure vs. Frequency P1dB vs. Frequency 5 20 4 15 NF (dB) P1dB (dBm) -40c 10 12 0 25 -40 C +85 C 30 10 5 -40 C +25 C 3 2 1 +85 C -40 C +25 C +85 C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 Frequency (GHz) 1 1.5 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 3 of 5 August 2009 AG303-63 InGaP HBT Gain Block Application Circuit Vcc Icc = 35 mA R1 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke RF IN RF OUT AG303-63 C2 Blocking Capacitor C1 Blocking Capacitor Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 µF 1000 pF Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF 2500 18 nH 56 pF 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. L1 C1, C2 C3 C4 R1 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 F chip capacitor Do Not Place 22.1 1% tolerance Size 0603 0603 0603 Recommended Bias Resistor Values S upply R1 value S ize Voltage 5V 22.1 ohms 0603 6V 51 ohms 0805 7V 80 ohms 1206 8V 108 ohms 1210 9V 137 ohms 1210 10 V 166 ohms 1210 12 V 223 ohms 2010 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. 0805 Typical Device Data Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25 C, calibrated to device leads) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) -22.98 179.98 21.98 177.39 -24.44 3.54 -20.65 -22.69 159.13 21.87 167.91 -25.02 4.82 -20.97 -20.16 143.45 21.63 156.07 -24.85 3.57 -25.40 -20.26 125.22 21.26 144.84 -24.83 4.51 -25.00 -20.94 105.07 20.77 134.31 -24.96 3.28 -23.86 -20.59 89.33 20.29 124.27 -24.48 7.57 -22.22 -20.65 73.36 19.71 115.11 -24.24 5.92 -20.71 -20.44 58.55 19.14 106.54 -23.97 6.93 -19.65 -19.79 46.75 18.54 98.41 -23.30 9.91 -18.55 -16.65 30.04 17.95 91.26 -23.27 8.63 -16.11 -17.12 24.85 17.54 85.95 -23.55 5.06 -16.52 -17.94 23.45 17.04 78.85 -22.50 5.49 -16.78 -19.00 24.66 16.52 71.97 -22.27 7.44 -17.04 -20.08 31.09 16.06 65.74 -21.97 7.62 -16.83 -21.05 44.35 15.56 59.22 -21.88 5.59 -16.19 -20.77 62.21 15.09 52.71 -21.42 3.70 -14.57 -19.88 76.48 14.56 46.28 -21.00 1.61 -12.93 -18.40 88.30 14.12 40.49 -20.52 -0.58 -11.61 -17.26 96.65 13.65 34.69 -20.29 -4.52 -10.81 -16.54 101.15 13.23 28.72 -20.01 -4.49 -10.22 -16.75 103.13 12.85 23.29 -20.11 -4.65 -9.92 -17.21 108.11 12.49 18.36 -19.52 -7.40 -10.06 -18.69 112.12 12.14 13.87 -19.18 -10.39 -10.32 -20.02 123.21 11.90 8.93 -19.00 -12.21 -10.98 -22.38 131.64 11.68 4.17 -18.60 -14.81 -11.52 S22 (ang) -5.68 -15.75 -43.37 -70.94 -91.79 -112.20 -125.75 -135.37 -142.40 -127.79 -139.55 -152.45 -171.24 169.31 149.95 132.43 122.50 114.50 107.97 105.55 105.40 102.86 103.16 105.01 103.93 Device S-parameters are available for download from the website at: http://www.TriQuint.com Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 4 of 5 August 2009 AG303-63 InGaP HBT Gain Block Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is annealed matte tin over copper. Outline Drawing Product Marking The component will be marked with a “J” designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. JXX MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1C Passes 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Land Pattern Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: [email protected] Web site: www.TriQuint.com Page 5 of 5 August 2009