FDN352AP Single P-Channel, PowerTrench® MOSFET Features General Description ■ –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Applications ■ Notebook computer power management D D S G G S SuperSOT™-3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current –1.3 A – Continuous (Note 1a) – Pulsed PD –10 Power Dissipation for Single Operation TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 52AP FDN352AP 7’’ 8mm 3000 units ©2005 Fairchild Semiconductor Corporation FDN352AP Rev. C 1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET April 2005 Symbol Parameter Test Conditions Min Typ Max Units –17 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±25V, VDS = 0 V ±100 nA –30 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –1.3 A VGS = –4.5 V, ID = –1.1 A VGS = –4.5 V, ID = –1.1 A, TJ = 125°C 150 250 330 gFS Forward Transconductance VDS = –5 V, ID = –0.9 A 2.0 VDS = –15 V, VGS = 0 V, f = 1.0 MHz –0.8 –2.0 –2.5 V mV/°C 4 180 300 400 mΩ S Dynamic Characteristics Ciss Input Capacitance 150 pF Coss Output Capacitance 40 pF Crss Reverse Transfer Capacitance 20 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf 4 8 ns 15 28 ns Turn–Off Delay Time 10 18 ns Turn–Off Fall Time 1 2 ns 1.4 1.9 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –10 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω VDS = –10V, ID = –0.9 A, VGS = –4.5 V nC 0.5 nC 0.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.42 A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = –3.9 A, dIF/dt = 100 A/µs (Note 2) –0.8 –0.42 A –1.2 V 17 ns 7 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. (a) RθJA = 250°C/W when mounted on a 0.02 in2 pad of 2oz. copper. (b) RθJA = 270°C/W when mounted on a 0.001 in2 pad of 2oz. copper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 FDN352AP Rev. C www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 5 2.4 VGS=-4.0V VGS=-10V -ID, DRAIN CURRENT (A) 4 -4.5V 3 2.2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -6.0V -4.0V 2 -3.5V 1 -3.0V 2.0 -4.5V 1.8 -5.0V 1.6 -6.0V 1.4 -8.0V 0.8 0 0.5 1 1.5 -V DS , DRAIN TO SOURCE VOLTAGE (V) 2 0 2.5 Figure 1. On-Region Characteristics. 2 4 6 -ID, DRAIN CURRENT (A) 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 1.4 I D = -0.45A I D = -0.9A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -10V 1.0 0 1.2 1 0.8 0.6 0.6 0.5 0.4 T A = 125 oC 0.3 T A = 25 oC 0.2 0.1 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE ( oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 8 -I S , REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -7.0V 1.2 TA = -55 oC o 125 C 6 o 25 C 4 2 VGS = 0V 10 1 TA = 125 oC 0.1 25 oC 0.01 -55 oC 0.001 0.0001 0 1 2 3 4 5 6 -VGS , GATE TO SOURCE VOLTAGE (V) 7 0.0 8 Figure 5. Transfer Characteristics. 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDN352AP Rev. C 0.2 0.4 0.6 0.8 1.0 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET Typical Characteristics 10 200 f = 1 MHz VGS = 0 V 8 V DS = -10V 150 CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) I D = -0.9A -20V 6 -15V 4 Ciss 100 Coss 50 2 Crss 0 0 0 0.5 1 1.5 2 Q g, GATE CHARGE (nC) 2.5 0 3 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 10 P(pk), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 5 100µs RDS(ON) LIMIT 1ms 10ms 1 100ms 1s 10s DC VGS = -10V SINGLE PULSE R θJA = 270 o C/W 0.1 TA = 25 o C 1 10 -V DS , DRAIN-SOURCE VOLTAGE (V) 30 20 10 0 0.0001 0.01 0.1 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE SINGLE PULSE RθJA = 270°C/W T A = 25°C 40 0.001 0.01 0.1 1 t 1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) * R θ JA 0.2 0.1 R θJA = 270°C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J – TA = P * R θJA(t) Duty Cycle, D = t 1 / t 2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDN352AP Rev. C www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET Typical Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 FDN352AP Rev. C www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench® MOSFET TRADEMARKS