BILIN BAV17 Small signal switching diode Datasheet

BL
GALAXY ELECTRICAL
BAV17---BAV21
VOLTAGE RANGE: 20-200 V
CURRENT: 250 mA
SMALL SIGNAL SWITCHING DIODE
FEATURES
DO - 35(GLASS)
Silicon epitaxial planar diode
High speed switching diode
500 m W power dissipation
MECHANICAL DATA
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 gram s
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
Half w ave rectification w ith resist.load
@TA =25 and f 50Hz
Forw ard surge current @ t<1s and TJ =25
Pow er dissipation
@ TA =25
Thermal resistance junction to ambient
Junction temperature
Storage temperature range
VR
V RM
BAV17
20
25
BAV18
50
60
BAV19
100
120
BAV20
150
200
BAV21
200
250
UNITS
V
V
I(AV)
250 1)
mA
IFSM
P tot
RθJA
TJ
TSTG
1.0
A
mW
K/W
1)
500
350
175
-55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ IF=100mA
Leakage current
at reverse voltage
MIN
-
TYP
-
MAX
1.0
UNITS
V
-
-
100
nA
-
-
15
µA
CJ
-
1.5
-
t rr
-
-
50
VF
@Tj=25
IR
@Tj=100
Capacitance
@ V F=V R=0V
Reverse recovery time
from IF=30mA to IR=30mA
from IRR=3mA, RL=100Ω.
f=1MHZ
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
Document Number 0268008
BLGALAXY ELECTRICAL
pF
ns
www.galaxycn.com
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD CHARACTERISTICS
BAV17---BAV21
FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS
AMBIENT TEMPERATURE
A
.3
mA
1000
100
I O, I F
TJ=100
.2
DC CURRENT I F
10
TJ=25
IF
1
.1
CURRENT (RECTIF.) I F(AV)
.1
1
.01
0
.2
.4
.6
.8
30
0
60
90
1.0V
120
150℃
TA
VF
FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS
AMBIENT TEMPERATURE
FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
1000
mW
500
I R (T J )
I R (25
400
)
100
P tot
300
10
200
1
100
V R =50V
1
0
100
200℃
0.1
TA
100
0
200℃
TJ
FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS
FORWARD CURRENT
FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE
100
2
T J =25
1.8
r
50
1.6
F
1.4
20
CJ
1.2
1
10
.8
5
.6
.4
2
.2
0
1
1
2
5
10
20
50
IF
100
mA
.1 .2 .5
1
2
5
10 20 50 100V
VR
www.galaxycn.com
Document Number 0268008
BLGALAXY ELECTRICAL
2.
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