Rohm BC857B Pnp small signal transistor Datasheet

PNP small signal transistor
BC857B
Dimensions (Unit : mm)
Features
1) Ideal for switching and AF amplifier applications.
2) High current gain.
2.9
0.4
Packaging specifications
(3)
1.3
2.4
Package
Type
0.95
0.45
0.2Min.
BC857B
Taping
Code
T116
Basic ordering unit (pieces)
3000
(2)
(1)
0.95 0.95
0.15
1.9
BC857B
(1)Emitter
(2)Base
(3)Collector
Each lead has same dimensions
Abbreviated symbol : G3F
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−45
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−0.1
A
Collector power dissipation
PC
0.20
W
Junction temperature
Storage temperature
∗
0.35
W
Tj
150
°C
Tstg
−65 to 150
°C
∗
Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage BVCEO
−45
−
−
V
IC= −1mA
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC= −50μA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50μA
Parameter
Collector-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Conditions
ICBO
−
−
−0.015
μA
VCB= −30V
VCE(sat1)
−
−
−0.3
V
IC/IB= −10mA/ −0.5mA
VCE(sat2)
−
−
−0.65
V
IC/IB= −100mA/ −5mA
VBE(on)
−0.6
−
−0.75
V
VCE= −5V, IC= −10mA
hFE
210
−
480
−
VCE= 5V, IC= −2mA
VCE= −5V, IE= 20mA, f=100MHz
fT
−
250
−
MHz
Collector outpu capacitance
Cob
−
−
4.5
pF
VCB= −10V, f=1MHz
Collector-base cutoff current
ICBO
−
−
−4
μA
VCB= −30V
Transition frequency
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c 2011 ROHM Co., Ltd. All rights reserved.
○
1/2
2011.11 - Rev.B
BC857B
Data Sheet
Electrical characteristics curves
-120
Ta=125ºC
75ºC
25ºC
-55ºC
-1
-100
-80
IB=-250uA
-60
-0.2
-0.4
-0.6
-0.8
-1
IB=-200uA
IB=-150uA
-40
IB=-100uA
IB=-50uA
-20
-0.1
0
IB=0A
0
-1.2
0
BASE TO EMITTER VOLTAGE : VBE (V)
-2
-8
-1
-10
100
10
-0.1
-100
-1
-10
-100
COLLECTOR CURRENT : IC (mA)
IB=-5uA
IB=0A
0
-0.4
1000
TRANSITION FREQUENCY : fT (MHz)
IC/IB=20/1
Ta=125ºC
75ºC
25ºC
-55ºC
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c 2011 ROHM Co., Ltd. All rights reserved.
○
-1.6
-2
Ta=25ºC
IC/IB=50/1
20/1
10/1
-0.1
-0.01
-0.1
Ta=25°C
VCE= −12V
200
100
50
1
2
5
10
20
50
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
2/2
-1
-10
-100
Fig 6. Collector Saturation Voltage
vs. Collector Current (I)
COLLECTOR CURRENT : IC (mA)
Fig 7. Collector Saturation Voltage
vs. Collector Current (II)
-1.2
COLLECTOR CURRENT : IC (mA)
500
0.5
-100
-0.8
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig 5. DC Current Gain vs.
Collector Current (II)
-1
-10
IB=-10uA
Fig 3. Grounded Emitter Output
Characteristics (II)
Ta=125ºC
75ºC
25ºC
-55ºC
Fig 4. DC Current Gain vs.
Collector Current (I)
-1
IB=-15uA
-1
COLLECTOR CURRENT : IC (mA)
-0.01
-0.1
IB=-20uA
-5
0
COLLECTOR SATURATION VOLTAGE :
VCE(sat) (V)
VCE=-5V
-3V
-1V
10
-0.1
IB=-25uA
-10
VCE=-5V
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
-6
IB=-35uA
IB=-30uA
Ta=25ºC
1000
Ta=25ºC
100
IB=-40uA
-10
Fig 2. Grounded Emitter Output
Characteristics (I)
1000
COLLECTOR SATURATION VOLTAGE :
VCE(sat) (V)
-4
IB=-50uA
IB=-45uA
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig 1. Grounded Emitter Propagation
Characteristics
-0.1
Ta=25ºC
100
20
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
-10
-15
IB=-500uA
-450uA
-400uA
-350uA
-300uA
COLLECTOR CURRENT : IC (mA)
VCE=-5V
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
-100
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
2011.11 - Rev.B
Notice
Notes
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R1120A