DinTek DTP9530 N-channel 30-v (d-s) mosfet halogen-free Datasheet

DTP9530
www.din-tek.jp
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0048 at VGS = 10 V
26
VDS (V)
30
0.006 at V
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
Qg (Typ.)
26.5 nC
GS = 4.5 V
RoHS
COMPLIANT
23.3
APPLICATIONS
• DC/DC Conversion
- Low-Side Switch
• Notebook PC
• Gaming
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
D
7
D
6
D
S
5
Bottom View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Single Pulse Avalanche Current
Avalanche Energy
ID
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Unit
V
21.5b, c
17.1b, c
70
5.4
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
26
22.6
A
2.7b, c
40
mJ
80
6.0
3.3
PD
3.0b, c
1.9b, c
- 55 to 150
TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
33
16
Maximum
42
21
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
1
DTP9530
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 1 mA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
V
27
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
- 5.6
1.2
30
µA
A
VGS = 10 V, ID = 15 A
0.0036
0.0048
VGS = 4.5 V, ID = 10 A
0.0052
0.0060
VDS = 15 V, ID = 15 A
75
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Rg
Gate Resistance
3545
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
95
40
nC
7.3
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
0.2
1.1
2.2
35
60
16
30
48
85
16
30
td(on)
18
35
td(off)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
62
26.5
tf
tr
Rise Time
Turn-Off Delay Time
pF
8.5
VDS = 15 V, VGS = 4.5 V, ID = 10 A
td(on)
Turn-On Delay Time
650
240
8
16
41
75
8
18
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
5.4
70
IS = 3 A
0.72
1.1
A
V
Body Diode Reverse Recovery Time
trr
33
65
ns
Body Diode Reverse Recovery Charge
Qrr
27
54
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
17
16
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTP9530
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
70
VGS = 10 thru 4 V
8
VGS = 3 V
I D - Drain Current (A)
I D - Drain Current (A)
56
42
28
6
4
TC = 25 °C
2
14
TC = 125 °C
0.5
1.0
2.0
1.5
0
2.5
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4500
0.0040
3600
VGS = 4.5 V
0.0035
0.0030
VGS = 10 V
900
0.0020
0
28
42
56
Ciss
1800
0.0025
14
5
2700
Coss
Crss
0
70
6
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.8
10
ID = 15 A
ID = 10 A
1.6
VDS = 15 V
VDS = 10 V
6
VDS = 20 V
4
2
VGS = 10 V
1.4
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1
VDS - Drain-to-Source Voltage (V)
0.0045
0
TC = - 55 °C
0
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
1.2
VGS = 4.5 V
1.0
0.8
0
0
13
26
39
Qg - Total Gate Charge (nC)
Gate Charge
52
65
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTP9530
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.025
100
ID = 15 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.020
0.015
0.010
TJ = 125 °C
0.01
0.005
0.001
0.0
0.000
0.2
0.4
0.6
1.0
0.8
TJ = 25 °C
0
1.2
1
VSD - Source-to-Drain Voltage (V)
3
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
200
0.4
0.2
160
Power (W)
0.0
- 0.2
ID = 5 mA
120
80
- 0.4
ID = 250 µA
40
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
I D - Drain Current (A)
Limited by R DS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
DC
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
4
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
VGS(th) Variance (V)
2
100
1
10
DTP9530
www.din-tek.jp
35
7.5
28
6.0
21
4.5
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
14
7
3.0
1.5
0
0.0
0
25
50
75
100
125
0
150
25
TC - Case Temperature (°C)
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
Current Derating*
2.0
Power (W)
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTP9530
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10 -2
10-1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
Package Information
www.din-tek.jp
PowerPAK SO-8, (SINGLE/DUAL)
L
H
E2
K
E4
D
3
4
θ
4
b
3
2
D5
e
2
D1
D
2
1
D2
Z
0.150 ± 0.008
M
1
D4
θ
W
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
3
D2
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
b
D2
Detail Z
K1
2
E1
E
D3(2x) D4
c
A
θ
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0.00
-
0.05
0.000
-
0.002
b
0.33
0.41
0.51
0.013
0.016
0.020
c
0.23
0.28
0.33
0.009
0.011
0.013
D
5.05
5.15
5.26
0.199
0.203
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.56
3.76
3.91
0.140
0.148
0.154
D3
1.32
1.50
1.68
0.052
0.059
0.066
D4
0.57 TYP.
D5
3.98 TYP.
0.0225 TYP.
0.157 TYP.
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
5.79
5.89
5.99
0.228
0.232
0.236
E2
3.48
3.66
3.84
0.137
0.144
0.151
E3
3.68
3.78
3.91
0.145
0.149
0.154
0.75 TYP.
E4
0.030 TYP.
e
1.27 BSC
0.050 BSC
K
1.27 TYP.
0.050 TYP.
K1
0.56
-
-
0.022
-
-
H
0.51
0.61
0.71
0.020
0.024
0.028
L
0.51
0.61
0.71
0.020
0.024
0.028
L1
0.06
0.13
0.20
0.002
0.005
0.008
θ
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 TYP.
0.005 TYP.
ECN: T10-0055-Rev. J, 15-Feb-10
DWG: 5881
1
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