DTP9530 www.din-tek.jp N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 26 VDS (V) 30 0.006 at V • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 26.5 nC GS = 4.5 V RoHS COMPLIANT 23.3 APPLICATIONS • DC/DC Conversion - Low-Side Switch • Notebook PC • Gaming PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D D 7 D 6 D S 5 Bottom View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Avalanche Energy ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 21.5b, c 17.1b, c 70 5.4 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 26 22.6 A 2.7b, c 40 mJ 80 6.0 3.3 PD 3.0b, c 1.9b, c - 55 to 150 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 33 16 Maximum 42 21 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. 1 DTP9530 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V 27 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V - 5.6 1.2 30 µA A VGS = 10 V, ID = 15 A 0.0036 0.0048 VGS = 4.5 V, ID = 10 A 0.0052 0.0060 VDS = 15 V, ID = 15 A 75 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 3545 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 95 40 nC 7.3 f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 1.1 2.2 35 60 16 30 48 85 16 30 td(on) 18 35 td(off) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 62 26.5 tf tr Rise Time Turn-Off Delay Time pF 8.5 VDS = 15 V, VGS = 4.5 V, ID = 10 A td(on) Turn-On Delay Time 650 240 8 16 41 75 8 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 5.4 70 IS = 3 A 0.72 1.1 A V Body Diode Reverse Recovery Time trr 33 65 ns Body Diode Reverse Recovery Charge Qrr 27 54 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 17 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTP9530 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 70 VGS = 10 thru 4 V 8 VGS = 3 V I D - Drain Current (A) I D - Drain Current (A) 56 42 28 6 4 TC = 25 °C 2 14 TC = 125 °C 0.5 1.0 2.0 1.5 0 2.5 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4500 0.0040 3600 VGS = 4.5 V 0.0035 0.0030 VGS = 10 V 900 0.0020 0 28 42 56 Ciss 1800 0.0025 14 5 2700 Coss Crss 0 70 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.8 10 ID = 15 A ID = 10 A 1.6 VDS = 15 V VDS = 10 V 6 VDS = 20 V 4 2 VGS = 10 V 1.4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1 VDS - Drain-to-Source Voltage (V) 0.0045 0 TC = - 55 °C 0 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 1.2 VGS = 4.5 V 1.0 0.8 0 0 13 26 39 Qg - Total Gate Charge (nC) Gate Charge 52 65 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTP9530 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.025 100 ID = 15 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.020 0.015 0.010 TJ = 125 °C 0.01 0.005 0.001 0.0 0.000 0.2 0.4 0.6 1.0 0.8 TJ = 25 °C 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 200 0.4 0.2 160 Power (W) 0.0 - 0.2 ID = 5 mA 120 80 - 0.4 ID = 250 µA 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 I D - Drain Current (A) Limited by R DS(on)* 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 4 4 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage VGS(th) Variance (V) 2 100 1 10 DTP9530 www.din-tek.jp 35 7.5 28 6.0 21 4.5 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 14 7 3.0 1.5 0 0.0 0 25 50 75 100 125 0 150 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Foot Current Derating* 2.0 Power (W) 1.6 1.2 0.8 0.4 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTP9530 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10 -2 10-1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 Package Information www.din-tek.jp PowerPAK SO-8, (SINGLE/DUAL) L H E2 K E4 D 3 4 θ 4 b 3 2 D5 e 2 D1 D 2 1 D2 Z 0.150 ± 0.008 M 1 D4 θ W L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 3 D2 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. b D2 Detail Z K1 2 E1 E D3(2x) D4 c A θ E3 Backside View of Dual Pad MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0.00 - 0.05 0.000 - 0.002 b 0.33 0.41 0.51 0.013 0.016 0.020 c 0.23 0.28 0.33 0.009 0.011 0.013 D 5.05 5.15 5.26 0.199 0.203 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.56 3.76 3.91 0.140 0.148 0.154 D3 1.32 1.50 1.68 0.052 0.059 0.066 D4 0.57 TYP. D5 3.98 TYP. 0.0225 TYP. 0.157 TYP. E 6.05 6.15 6.25 0.238 0.242 0.246 E1 5.79 5.89 5.99 0.228 0.232 0.236 E2 3.48 3.66 3.84 0.137 0.144 0.151 E3 3.68 3.78 3.91 0.145 0.149 0.154 0.75 TYP. E4 0.030 TYP. e 1.27 BSC 0.050 BSC K 1.27 TYP. 0.050 TYP. K1 0.56 - - 0.022 - - H 0.51 0.61 0.71 0.020 0.024 0.028 L 0.51 0.61 0.71 0.020 0.024 0.028 L1 0.06 0.13 0.20 0.002 0.005 0.008 θ 0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. 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