D10SC6MR Pb Free Plating Product ® Pb D10SC6MR 10 Ampere,60 Volt Dual Common Anode Schottky Barrier Half Bridge Rectifier ITO-220AB Features Low forward voltage drop High current capability Low reverse leakage current High surge current capability Unit:mm Application Switching power supply DC/DC converter Home Appliances, Office Equipment Telecommunication Mechanical Data Case: Fully Isolated Molding TO-220F Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.1 gram approximately TO-220F FullPak Case Case Negative Positive Common Cathode Common Anode Suffix "MR" Suffix "M" Case Doubler Tandem Polarity Suffix "MD" Case Reverse Doubler Tandem Polarity Suffix "MS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=120℃ IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Peak Surge Forward Current Repetitive Peak Surge Reverse Power PRRSM Pulse width 10μs, Rating of per diode, Tj= 25℃ Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR (Recommended torque：0.3N･m) Ratings -40〜150 150 60 65 10 100 330 1.5 0.5 Unit ℃ ℃ V V A A W kV N･m ●Electrical Characteristics Tc=25℃ Item Symbol Forward Voltage VF IR Reverse Current Junction Capacitance Cj Thermal Resistance θjc θcf Ratings Max.0.58 Max.4.5 Typ.200 Max.3.3 Max.1.5 Unit V mA pF ℃/W Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Conditions IF=5A, Pulse measurement, Rating of per diode VR=V RM, Pulse measurement, Rating of per diode f=1MHz, V R=10V, Rating of per diode junction to case case to heatsink, Mounting torque=0.5N･m Page 1/1 http://www.thinkisemi.com/