Plastic-Encapsulate Transistors FEATURES C945 (NPN) Complementary to A733 MARKING: CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 150 mA Collector Power Dissipation PC 0.4 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE 2. EMITTER SOT-23 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=1mA , IE=0 60 V Collector-emitter breakdown voltage VCEO IC=100uA , IB=0 50 V Emitter-base breakdown voltage VEBO IE=100mA, IC=0 5 V Collector cut-off current ICB VCB=60V, IE=0 0.1 uA Collector cut-off current O ICE VCE=45V 0.1 uA Emitter cut-off current O IEB VEB=5V , 0.1 uA O hFE(1) VCE=6 V , IC=1mA 70 hFE(2) VCE=6 V , IC=0.1mA 40 DC current gain IC=0 700 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V fT Transition frequency Collector output capacitance Cob Noise figure NF VCE=6V,IC=10mA,f =30 MHz 200 VCB=10V,IE=0,f=1MHZ MHz 3.0 pF 10 dB VCE=6V,IC=0.1mA CLASSIFICATION OF RG=10kΩ,f=1kMHZ hFE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ Page:P2-P1 Plastic-Encapsulate Transistors C945 Typical Characteristics MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ Page:P2-P2