INCHANGE Semiconductor isc Triacs BTB41 FEATURES ·With TOP3 non insulated package ·Suitables for general purpose where high surge current capability is required. Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RMS) RMS on-state current (full sine wave)Tj=80℃ 41 A ITSM Non-repetitive peak on-state current tp=20ms 410 A Operating junction temperature 125 ℃ -40~150 ℃ 1 W Tj Tstg Storage temperature PG(AV) Average gate power dissipation(Tj=125℃) Rth(j-c) Thermal resistance, junction to case 0.9 ℃/W Rth(j-a) Thermal resistance, junction to ambient 50 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM, VR=VRRM, Tj=125℃ VD=VDRM, VD=VDRM, Tj=125℃ IH Gate trigger current Ⅱ 0.005 5.0 0.005 5.0 UNIT mA mA 50 Ⅰ IGT MAX VD=12V; RL= 100Ω 50 Ⅲ 50 Ⅳ 100 mA Holding current IGT= 0.5A, Gate Open 80 mA VGT Gate trigger voltage all quadrant VD=12V; RL= 100Ω 1.3 V VTM On-state voltage ITM= 60A; tp= 380μs 1.55 V isc website： www.iscsemi.com isc & iscsemi is registered trademark