Transistors SMD Type PNP Transistors CXT5401 (KXT5401) ■ Features 1.70 0.1 ● Switching and amplification in high voltage Applications such as telephony ● Low current(max. 500mA) ● High voltage(max.160v) 0.42 0.1 0.46 0.1 ● Comlementary to CXT5551 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.5 W RθJA 250 ℃/W Thermal Resistance Junction to Ambient TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -160 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -150 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -50 Emitter cut-off current IEBO VEB= -4V , IC=0 -50 IC=-10 mA, IB=- 1mA -0.2 IC=-50 mA, IB= -5mA -0.5 IC= -10 mA, IB= -1mA -1 IC= -50 mA, IB= -5mA -1 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) DC current gain Unit V -5 hfe（1） VCE= -5V, IC= -1mA 50 hfe（2） VCE= -5V, IC= -10mA 60 hfe（3） VCE= -5V, IC=-50mA 50 nA V 300 Noise Figure NF VCE= -5.0V, IC= -200μA, RS= 10Ω,f =10Hz to 15.7KHz 8 dB Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 6 pF Transition frequency fT 300 MHz VCE= -10V, IC= -10mA,f=100MHz 100 ■ Marking Marking 5401 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors CXT5401 (KXT5401) ■ Typical Characterisitics Static Characteristic - 30 hFE —— IC 500 COMMON EMITTER Ta=25℃ -200uA -180uA - 25 -160uA -140uA - 20 -120uA -100uA - 15 -80uA - 10 VCE= -5V o Ta=100 C DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) - 35 o Ta=25 C 100 -60uA -40uA - 5 10 IB=-20uA 0 0 - 2 - 10 - 8 -6 - 4 12 COLLECTOR-EMITTER VOLTAGE VBEsat —— - 1.0 - 14 VCE (V) IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) - 0.8 Ta=25℃ - 0.7 - 0.6 Ta=100℃ - 0.5 - 0.4 -1 -10 COLLECTOR CURRENT Cob / Cib —— 50 IC -100 (mA) Cib VCEsat —— o 10 Cob (mA) - 500 - 100 IC β=10 Ta=25℃ -0.01 -0.1 -1 COLLECTOR CURRENT fT 300 Ta=25 C IC Ta=100℃ VCB / VEB f=1MHz IE=0 / IC=0 - 10 COLLECTOR CURRENT -0.1 TRANSITION FREQUENCY fT (MHz) - 0.3 -0.1 -1 -1 β=10 - 0.9 CAPACITANCE C (pF) 4 - 0.3 - 18 - 16 —— -10 IC -100 (mA) IC 250 200 150 100 50 VCE=-10V o 1 - 0.5 -10 REVERSE VOLTAGE Pc COLLECTOR POWER DISSIPATION Pc (W) 0.6 Ta 0.4 0.3 0.2 0.1 0 25 50 75 AMBIENT TEMPERATURE www.kexin.com.cn 100 Ta (℃) Ta=25 C -0 -5 -10 -15 COLLECTOR CURRENT (V) 0.5 0.0 2 —— V 0 125 150 -20 - IC -25 (mA) -30