BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features http://onsemi.com 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS •Collector - Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc •Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C •High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc •Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage Vdc 5.0 Vdc IC 6 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 65 0.52 W W/°C TJ, Tstg -65 to +150 °C Symbol Max Unit RqJC 1.92 °C/W - Continuous - Peak Operating and Storage Junction Temperature Range 2 3 80 100 VEB Collector Current TO-220AB CASE 221A-09 STYLE 1 Vdc 80 100 MARKING DIAGRAM BD24xyG AY WW THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BD24xy = A Y WW G = = = = Device Code x = 3 or 4 y = B or C Assembly Location Year Work Week Pb-Free Package ORDERING INFORMATION *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 November, 2007 - Rev. 12 1 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BD243B/D BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 1. Power Derating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Min Max 80 100 - - 0.7 - 400 400 - 1.0 30 15 - VCEO(sus) BD243B, BD244B BD243C, BD244C ICEO Unit Vdc mAdc BD243B, BD243C, BD244B, BD244C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) mAdc ICES BD243B, BD244B BD243C, BD244C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 1.0 Adc) VCE(sat) - 1.5 Vdc Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) - 2.0 Vdc Current-Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 - MHz Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 - - DYNAMIC CHARACTERISTICS 1. Pulse Test: Pulsewidth v 300 ms, Duty Cycle v 2.0%. 2. fT = hfe • ftest http://onsemi.com 2 BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) 2.0 VCC - 30 V TJ = 25°C VCC = 30 V IC/IB = 10 1.0 25 ms 0.7 0.5 RC + 11 V t, TIME (s) μ SCOPE RB 0 - 9.0 V 51 tr, tf v 10 ns DUTY CYCLE = 1.0% D1 0.3 0.2 tr 0.1 0.07 0.05 -4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.03 0.02 0.06 D1 MUST BE FAST RECOVERY TYPE eg. 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA td @ VBE(off) = 5.0 V 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 4.0 6.0 Figure 3. Turn-On Time 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RqJC(max) = 1.92°C/W 0.02 t1 0.03 0.01 0.02 SINGLE PULSE t2 SINGLE PULSE D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.5 ms IC, COLLECTOR CURRENT (AMP) 5.0 3.0 1.0 ms 2.0 TJ = 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C 1.0 0.5 5.0 ms CURVES APPLY BELOW RATED VCEO 0.3 0.2 0.1 5.0 BD243B, BD244B BD243C, BD244C 10 20 40 60 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active Region Safe Operating Area http://onsemi.com 3 BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) 5.0 300 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 ts t, TIME (s) μ 1.0 TJ = 25°C 200 CAPACITANCE (pF) 3.0 2.0 0.7 0.5 0.3 0.2 tf 0.1 0.07 0.05 0.06 100 70 Cob 50 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) 0.1 Cib 30 0.5 4.0 6.0 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn‐Off Time 30 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN VCE = 2.0 V TJ = 150°C 100 70 50 25°C -55°C 10 7.0 5.0 0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 TJ = 25°C 1.6 IC = 1.0 A θV, TEMPERATURE COEFFICIENTS (mV/ °C) TJ = 25°C V, VOLTAGE (VOLTS) 1.6 0.4 0 0.06 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.4 0.6 1.0 2.5 A 5.0 A 1.2 0.8 0.4 0 10 20 30 50 100 200 300 IB, BASE CURRENT (mA) 500 1000 Figure 9. Collector Saturation Region 2.0 0.8 50 2.0 Figure 8. DC Current Gain 1.2 30 Figure 7. Capacitance 500 300 200 20 2.0 3.0 4.0 +2.5 +2.0 +1.5 +1.0 + 25°C to + 150°C +0.5 0 *qVC FOR VCE(sat) - 55°C to + 25°C -0.5 + 25°C to + 150°C -1.0 -1.5 qVB FOR VBE - 55°C to + 25°C -2.0 -2.5 0.06 6.0 *APPLIES FOR IC/IB ≤ 5.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.4 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 0.6 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHM BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) 103 IC, COLLECTOR CURRENT (A) μ VCE = 30 V 102 TJ = 150°C 101 100°C 25°C 100 10-1 IC = ICES 10-2 REVERSE 10-3 -0.3 -0.2 -0.1 FORWARD 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 10M VCE = 30 V 1.0M IC = 10 x ICES IC = 2 x ICES 100k IC ≈ ICES 10k 1.0k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 0.1k 20 40 60 80 100 120 140 160 VBE, BASE‐EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut‐Off Region Figure 13. Effects of Base-Emitter Resistance ORDERING INFORMATION Device BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package Shipping† TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE -TB SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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