BSB019N03LX G OptiMOSTM2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS(on),max 1.9 mΩ ID 174 A • Low profile (<0.7 mm) • Avalanche rated • Qualified for consumer level application MG-WDSON-2 • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Optimized for high switching frequency DC/DC converter • Low parasitic inductance • Compatible with DirectFET® package MX footprint and outline 1) Type Package Outline Marking BSB019N03LX G 2) MG-WDSON-2 MX 1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 174 V GS=10 V, T C=100 °C 110 V GS=10 V, T A=25 °C, R thJA=45 K/W 2) Unit A 31 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse 4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 290 mJ Gate source voltage V GS ±20 V 1) TM CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. Rev. 2.0 page 1 2009-05-11 BSB019N03LX G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 89 T A=25 °C, T j, T stg -40 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.8 R thJA=45 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - 1.0 top - - 1.4 6 cm2 cooling area2) - - 45 30 - - Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=25 A - 2.5 3.1 mΩ V GS=10 V, I D=30 A - 1.6 1.9 - 1.0 - Ω 60 120 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 2.0 See figure 3 for more detailed information page 2 2009-05-11 BSB019N03LX G Parameter Values Symbol Conditions Unit min. typ. max. - 6300 8400 - 2200 2900 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 280 - Turn-on delay time t d(on) - 10 - Rise time tr - 7.8 - Turn-off delay time t d(off) - 42 - Fall time tf - 6.4 - Gate to source charge Q gs - 18 - Gate charge at threshold Q g(th) - 10 - Gate to drain charge Q gd - 12 - Switching charge Q sw - 19 - Gate charge total Qg - 44 59 Gate plateau voltage V plateau - 2.8 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 92 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 38 - Output charge Q oss V DD=15 V, V GS=0 V - 50 - - - 89 - - 400 V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.78 1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 50 nC 4) 5) Rev. 2.0 T C=25 °C A See figure 13 for more detailed information See figure 16 for gate charge parameter definition page 3 2009-05-11 BSB019N03LX G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 200 90 80 160 70 120 I D [A] P tot [W] 60 50 40 80 30 20 40 10 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 160 T C [°C] 101 limited by on-state resistance 1 µs 10 µs 102 100 100 µs 0.5 1 ms Z thJC [K/W] I D [A] DC 101 10 ms 0.2 10-1 0.1 0.05 0.02 100 10-2 0.01 single pulse 10-1 10 10-3 -1 10 0 10 1 10 2 V DS [V] Rev. 2.0 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-05-11 BSB019N03LX G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 300 6 4.5 V 5V 3V 4V 250 5 10 V 3.2 V 4 150 R DS(on) [mΩ] I D [A] 200 3.5 V 100 3.5 V 3 4V 4.5 V 5V 2 10 V 3.2 V 50 1 3V 2.8 V 0 0 0 1 2 3 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 300 250 320 200 I D [A] g fs [S] 240 150 160 100 80 50 150 °C 25 °C 0 0 0 1 2 3 4 5 Rev. 2.0 0 40 80 120 160 I D [A] V GS [V] page 5 2009-05-11 BSB019N03LX G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 4 2.5 3.5 2 2.5 98 % 1.5 V GS(th) [V] R DS(on) [mΩ] 3 2 typ 1 1.5 1 0.5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 1000 104 25 °C 150 °C, 98% Ciss Coss 10 150 °C I F [A] C [pF] 100 3 25 °C, 98% 10 Crss 102 1 0 10 20 30 V DS [V] Rev. 2.0 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2009-05-11 BSB019N03LX G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 25 °C 6V 24 V 100 °C 125 °C V GS [V] I AV [A] 8 10 6 4 2 1 0 1 10 100 1000 0 40 80 120 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 37 V GS 35 Qg 33 V BR(DSS) [V] 31 28 V g s(th) 26 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.0 page 7 2009-05-11 BSB019N03LX G Package Outline Rev. 2.0 MG-WDSON-2 page 8 2009-05-11 BSB019N03LX G Package Outline MG-WDSON-2 PG-TDSON-8: Tape Dimensions in mm Rev. 2.0 page 9 2009-05-11 BSB019N03LX G MG-WDSON-2 Dimensions in mm Reccomended stencil thickness 150 µm Rev. 2.0 page 10 2009-05-11 BSB019N03LX G Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2009-05-11