AP83T03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
30V
RDS(ON)
6mΩ
ID
G
75A
S
Description
AP83T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
□
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP83T03GJ) are available for low-profile
applications.
G
G
D
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
75
A
ID@TC=100℃
Drain Current, VGS @ 10V
53
A
240
A
60
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
3
Value
Units
2.5
℃/W
62.5
℃/W
110
℃/W
1
201410163
AP83T03GH/J-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=40A
-
-
6
mΩ
VGS=4.5V, ID=30A
-
-
11
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=30A
-
55
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
21
34
nC
Qgs
Gate-Source Charge
VDS=24V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
15
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9.5
-
ns
tr
Rise Time
ID=30A
-
86
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
24
-
ns
tf
Fall Time
VGS=10V
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
1150 1840
pF
Coss
Output Capacitance
VDS=25V
Crss
Rg
-
340
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
250
-
pF
Gate Resistance
f=1.0MHz
-
0.9
-
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
22
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP83T03GH/J-HF
200
120
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
160
10V
7.0V
6.0V
5.0V
o
T C =175 C
100
ID , Drain Current (A)
T C =25 o C
120
V G = 4.0V
80
V G =4.0V
80
60
40
40
20
0
0
0
4
8
12
16
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
9
I D =30A
I D =40A
V G =10V
T C =25 o C
7
.
6
Normalized RDS(ON)
RDS(ON) (mΩ)
8
1.6
1.2
0.8
5
0.4
4
2
4
6
8
-50
10
0
150
200
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
30
1.2
Normalized VGS(th)
40
IS(A)
100
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
T j =175 o C
50
o
V GS , Gate-to-Source Voltage (V)
T j =25 o C
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP83T03GH/J-HF
f=1.0MHz
1600
I D =30A
8
V DS =15V
V DS =18V
V DS =24V
6
C iss
1200
C (pF)
VGS , Gate to Source Voltage (V)
10
800
4
C oss
C rss
400
2
0
0
0
10
20
30
40
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
ID (A)
100
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
.
Normalized Thermal Response (Rthjc)
1000
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP83T03GH/J-HF
MARKING INFORMATION
TO-251
83T03GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
83T03GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5