Transistors SMD Type NPN High-Voltage Transistors BSR19,BSR19A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage (max. 160 V). 1 0.55 Low current (max. 300 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit 160 V BSR19A 180 V BSR19 140 V 160 V BSR19 VCBO VCEO BSR19A VEBO 6 V Collector current IC 300 mA Peak collector current ICM 600 mA Emitter-base voltage IB 100 mA Peak base current IBM 100 mA Total power dissipation * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 Base current K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors SMD Type BSR19,BSR19A Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current BSR19 Collector cutoff current BSR19A Emitter cutoff current ICBO ICBO IEBO DC current gain * BSR19 hFE Testconditons Max Unit IE = 0; VCB = 100 V 100 nA IE = 0; VCB = 100 V; Tamb = 100 100 ìA IE = 0; VCB = 120 V 50 nA IE = 0; VCB = 120 V; Tamb = 100 50 ìA 50 nA IC = 0; VEB = 4 V IC = 10 mA; VCE = 5 V BSR19A DC current gain * BSR19 hFE IC = 50 mA; VCE = 5 V BSR19A collector-emitter saturation voltage collector-emitter saturation voltage 60 250 80 250 20 VCEsat IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA BSR19A Collector capacitance Cc IE = ie = 0; VCB = 10 V; f = 1 MHz Transition frequency fT IC = 10 mA; VCE = 10 V; f = 100 MHz hFE Classification 2 TYPE BSR19 BSR19A Marking U35 U36 www.kexin.com.cn Typ 30 VCEsat BSR19 Min 100 150 mV 250 mV 200 mV 6 pF 300 MHz