PHILIPS BZV49-C20 Voltage regulator diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BZV49 series
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 11
2005 Feb 03
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
FEATURES
PINNING
• Total power dissipation: max. 1 W
PIN
DESCRIPTION
• Tolerance series: approx. ±5%
1
anode
• Working voltage range: nom. 2.4 to 75 V (E24 range)
2
cathode
• Non-repetitive peak reverse power dissipation:
max. 40 W.
3
anode
APPLICATIONS
• General regulation functions.
1
3
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
2
3
The diodes are available in the normalized E24 approx.
±5% tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V (BZV49-C2V4
to BZV49-C75).
2
sym096
1
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
BZV49-C2V4 to
BZV49-C75
note 1
NAME
DESCRIPTION
VERSION
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
Note
1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
MARKING
TYPE
NUMBER
MARKING
CODE
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4
2Y4
BZV49-C6V2
6Y2
BZV49-C16
16Y
BZV49-C43
43Y
BZV49-C2V7
2Y7
BZV49-C6V8
6Y8
BZV49-C18
18Y
BZV49-C47
47Y
BZV49-C3V0
3Y0
BZV49-C3Y3
3Y3
BZV49-C7V5
7Y5
BZV49-C20
20Y
BZV49-C51
51Y
BZV49-C8V2
8Y2
BZV49-C22
22Y
BZV49-C56
56Y
BZV49-C3V6
3Y6
BZV49-C9V1
9Y1
BZV49-C24
24Y
BZV49-C62
62Y
BZV49-C3V9
3Y9
BZV49-C10
10Y
BZV49-C27
27Y
BZV49-C68
68Y
BZV49-C4V3
4Y3
BZV49-C11
11Y
BZV49-C30
30Y
BZV49-C75
75Y
BZV49-C4V7
4Y7
BZV49-C12
12Y
BZV49-C33
33Y
−
−
BZV49-C5V1
5Y1
BZV49-C13
13Y
BZV49-C36
36Y
−
−
BZV49-C5V6
5Y6
BZV49-C15
15Y
BZV49-C39
39Y
−
−
2005 Feb 03
TYPE
NUMBER
MARKING
CODE
2
TYPE
NUMBER
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
250
UNIT
IF
continuous forward current
mA
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
1
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.2
−
40
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
see Table
“Per type”
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
2005 Feb 03
PARAMETER
forward voltage
CONDITIONS
IF = 50 mA; see Fig.3
3
MAX.
UNIT
1
V
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (µA)
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
4
450
50
1.0
6.0
5
450
20
1.0
6.0
0
5
450
10
1.0
6.0
−2.4
0
5
450
5
1.0
6.0
−2.4
0
5
450
5
1.0
6.0
−3.5
−2.5
0
5
450
3
1.0
6.0
90
−3.5
−2.5
0
5
450
3
1.0
6.0
80
−3.5
−1.4
+0.2
5
300
3
2.0
6.0
40
60
−2.7
−0.8
+1.2
5
300
2
2.0
6.0
6.0
15
40
−2.0
+1.2
+2.5
5
300
1
2.0
6.0
6.6
6
10
0.4
2.3
3.7
5
200
3
4.0
6.0
6.4
7.2
6
15
1.2
3.0
4.5
5
200
2
4.0
6.0
7V5
7.0
7.9
6
15
2.5
4.0
5.3
5
150
1
5.0
4.0
8V2
7.7
8.7
6
15
3.2
4.6
6.2
5
150
0.7
5.0
4.0
9V1
8.5
9.6
6
15
3.8
5.5
7.0
5
150
0.5
6.0
3.0
10
9.4
10.6
8
20
4.5
6.4
8.0
5
90
0.2
7.0
3.0
11
10.4
11.6
10
20
5.4
7.4
9.0
5
85
0.1
8.0
2.5
12
11.4
12.7
10
25
6.0
8.4
10.0
5
85
0.1
8.0
2.5
13
12.4
14.1
10
30
7.0
9.4
11.0
5
80
0.1
8.0
2.5
15
13.8
15.6
10
30
9.2
11.4
13.0
5
75
0.05
10.5
2.0
16
15.3
17.1
10
40
10.4
12.4
14.0
5
75
0.05
11.2
1.5
18
16.8
19.1
10
45
12.4
14.4
16.0
5
70
0.05
12.6
1.5
20
18.8
21.2
15
55
14.4
16.4
18.0
5
60
0.05
14.0
1.5
22
20.8
23.3
20
55
16.4
18.4
20.0
5
60
0.05
15.4
1.25
24
22.8
25.6
25
70
18.4
20.4
22.0
5
55
0.05
16.8
1.25
TYP.
MAX.
MIN.
TYP. MAX.
MAX.
2V4
2.2
2.6
70
100
−3.5
−1.6
0
5
2V7
2.5
2.9
75
100
−3.5
−2.0
0
3V0
2.8
3.2
80
95
−3.5
−2.1
3V3
3.1
3.5
85
95
−3.5
3V6
3.4
3.8
85
90
−3.5
3V9
3.7
4.1
85
90
4V3
4.0
4.6
80
4V7
4.4
5.0
50
5V1
4.8
5.4
5V6
5.2
6V2
5.8
6V8
MAX.
Product specification
VR
(V)
MAX.
BZV49 series
MAX.
MIN.
Philips Semiconductors
BZV49CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
Voltage regulator diodes
2005 Feb 03
Per type
Tj = 25 °C unless otherwise specified.
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (µA)
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
MAX.
MAX.
VR
(V)
2
50
0.05
18.9
1.0
29.4
2
50
0.05
21.0
1.0
33.4
2
45
0.05
23.1
0.9
37.4
2
45
0.05
25.2
0.8
5
MIN.
MAX.
TYP.
MAX.
MIN.
TYP. MAX.
MAX.
27
25.1
28.9
25
80
21.4
23.4
25.3
30
28.0
32.0
30
80
24.4
26.6
33
31.0
35.0
35
80
27.4
29.7
36
34.0
38.0
35
90
30.4
33.0
39
37.0
41.0
40
130
33.4
36.4
41.2
2
45
0.05
27.3
0.7
43
40.0
46.0
45
150
37.6
41.2
46.6
2
40
0.05
30.1
0.6
47
44.0
50.0
50
170
42.0
46.1
51.8
2
40
0.05
32.9
0.5
51
48.0
54.0
60
180
46.6
51.0
57.2
2
40
0.05
35.7
0.4
56
52.0
60.0
70
200
52.2
57.0
63.8
2
40
0.05
39.2
0.3
62
58.0
66.0
80
215
58.8
64.4
71.6
2
35
0.05
43.4
0.3
68
64.0
72.0
90
240
65.6
71.7
79.8
2
35
0.05
47.6
0.25
75
70.0
79.0
95
255
73.4
80.2
88.6
2
35
0.05
52.5
0.2
Philips Semiconductors
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
Voltage regulator diodes
2005 Feb 03
BZV49CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
Product specification
BZV49 series
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-tp)
thermal resistance from junction to tie-point
Rth(j-a)
thermal resistance from junction to ambient
note 1
VALUE
UNIT
15
K/W
125
K/W
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
GRAPHICAL DATA
MBG781
MBG801
103
handbook, halfpage
300
handbook, halfpage
PZSM
(W)
IF
(mA)
102
200
(1)
10
100
(2)
1
10−1
1
duration (ms)
0
0.6
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2
Fig.3
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
2005 Feb 03
6
0.8
VF (V)
1
Forward current as a function of forward
voltage; typical values.
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
MBG927
1
handbook, full pagewidth
4V3
SZ
(mV/K)
3V9
3V6
0
3V3
−1
3V0
−2
2V7
2V4
−3
10-3
10-2
10-1
IZ (A)
BZV49-C2V4 to C4V3.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of working current; typical values.
MBG924
10
handbook, halfpage
SZ
(mV/K)
10
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
0
4V7
−5
0
4
8
12
16
IZ (mA)
20
BZV49-C4V7 to C10.
Tj = 25 to 150 °C.
Fig.5
Temperature coefficient as a function of
working current; typical values.
2005 Feb 03
7
1
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2005 Feb 03
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
8
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
04-08-03
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2005 Feb 03
9
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Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.add[email protected]
SCA76
© Koninklijke Philips Electronics N.V. 2005
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R76/04/pp10
Date of release: 2005
Feb 03
Document order number:
9397 750 13926
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