TM UniFET FDA18N50 500V N-Channel MOSFET Features Description • 19A, 500V, RDS(on) = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45 nC) • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G TO-3P FDA Series G DS S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR FDA18N50 Unit 500 V 19 11.4 A A 76 A ±30 V (Note 2) 945 mJ Avalanche Current (Note 1) 19 A EAR Repetitive Avalanche Energy (Note 1) 23 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 239 1.92 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C (Note 1) (TC = 25°C) - Derate above 25°C Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 0.52 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2006 Fairchild Semiconductor Corporation FDA18N50 Rev. A 1 www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET October 2006 Device Marking Device Package Reel Size Tape Width Quantity FDA18N50 FDA18N50 TO-3PN - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.220 0.265 Ω -- 25 -- S -- 2200 2860 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 9.5A gFS Forward Transconductance VDS = 40V, ID = 9.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 330 430 pF -- 25 40 pF -- 55 120 ns -- 165 340 ns -- 95 200 ns -- 90 190 ns -- 45 60 nC -- 12.5 -- nC -- 19 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 19A RG = 25Ω (Note 4, 5) VDS = 400V, ID = 19A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 19 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 76 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 19A -- -- 1.4 V trr Reverse Recovery Time -- 500 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 19A dIF/dt =100A/µs -- 5.4 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.7mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 19A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Package Marking and Ordering Information FDA18N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 0 10 o 150 C 1 10 o 25 C o -55 C * Notes : 1. 250µs Pulse Test -1 * Notes : 1. VDS = 40V 2. 250µs Pulse Test o 10 2. TC = 25 C 0 -1 0 10 10 1 10 10 2 4 6 10 12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 10 0.6 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.5 VGS = 10V 0.4 0.3 VGS = 20V 0.2 o 1 10 150oC o * Notes : 1. VGS = 0V 2. 250µs Pulse Test 25 C * Note : TJ = 25 C 0 0.1 0 5 10 15 20 25 30 35 40 45 50 55 60 65 10 70 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics Coss Ciss 2000 1000 1.4 1.6 1.8 2.0 2.2 2.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 3000 1.2 Figure 6. Gate Charge Characteristics 5000 4000 1.0 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitances [pF] 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 10 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 * Note : ID = 18A 0 -1 10 0 10 0 1 10 0 VDS, Drain-Source Voltage [V] 20 30 40 50 QG, Total Gate Charge [nC] 3 FDA18N50 Rev. A 10 www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 9.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 2 10 10 µs Operation in This Area is Limited by R DS(on) 0 10 15 1 ms 10 ms 100 ms DC 1 10 -1 ID, Drain Current [A] ID, Drain Current [A] 100 µs * Notes : 10 10 5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 0 25 2 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D = 0 .5 10 0 .2 -1 PDM 0 .1 t1 t2 0 .0 5 0 .0 2 * N o te s : o 1 . Z θ J C ( t) = 0 .5 2 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 1 10 -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDA18N50 Rev. A www.fairchildsemi.com FDA18N50 500V N-Channel MOSFET Mechanical Dimensions 7 FDA18N50 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21