AP2613GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Fast Switching Characteristic
▼ Lower Gate Charge
▼ Small Footprint & Low Profile Package
▼ RoHS Compliant & Halogen-Free
G
BVDSS
-20V
RDS(ON)
37mΩ
ID
- 6.2A
S
S
Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D
G
SOT-26
D
D
The SOT-26 package is widely used for all commercial-industrial
applications.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 20
V
+8
V
3
-6.2
A
3
-4.9
A
-24
A
2
W
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient3
62.5
℃/W
Data and specifications subject to change without notice
1
201111081
AP2613GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V, ID=-4A
-
31
37
mΩ
VGS=-2.5V, ID=-3A
-
42
50
mΩ
VGS=-1.8V, ID=-1A
-
60
75
mΩ
-0.3
-0.7
-1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-4A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS= + 8V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-4A
-
13
21
nC
Qgs
Gate-Source Charge
VDS=-10V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=-10V
-
10
-
ns
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
45
-
ns
tf
Fall Time
VGS=-5V
-
33
-
ns
Ciss
Input Capacitance
VGS=0V
-
1050 1680
pF
Coss
Output Capacitance
VDS=-10V
-
180
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Rg
Gate Resistance
f=1.0MHz
-
7.3
14.6
Ω
Min.
Typ.
Max. Units
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2613GY-HF
25
25
-5.0V
-4.5V
-3.5V
-2.5V
-ID , Drain Current (A)
20
20
15
V G = -1.8V
10
65mΩ
15
V G = -1.8V
10
5
5
0
0
0
2
4
6
8
0
10
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
95
1.8
I D =-1A
I D =-4.2A
T A =25 o C o
T A =25 C
I D = -4A
V GS = -4.5V
1.6
Normalized RDS(ON)
85
75
RDS(ON) (mΩ )
-5.0V
-4.5V
-3.5V
-2.5V
TA=150oC
-ID , Drain Current (A)
T A =25 o C
65
55
1.4
1.2
1
45
0.8
35
25
0.6
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
5
I D = -250uA
1.6
Normalized -VGS(th) (V)
-IS(A)
4
3
T j =150 o C
2
T j =25 o C
1.2
0.8
0.4
1
2.01E+08
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2613GY-HF
f=1.0MHz
1300
I D = -4A
V DS = -10V
1100
6
C iss
65mΩ
900
C (pF)
-VGS , Gate to Source Voltage (V)
8
4
700
500
2
300
0
C oss
C rss
100
0
4
8
12
16
20
1
24
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
-ID (A)
100us
Operation in this area
limited by RDS(ON)
10
Normalized Thermal Response (R thja)
Duty factor=0.5
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃
℃ /W
0.001
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
7
20
V DS =-5V
6
-ID , Drain Current (A)
-ID , Drain Current (A)
16
12
8
5
4
3
2
T j =150 o C
4
T j =25 o C
1
o
T j =-40 C
0
0
0
1
2
3
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4