2 1 3 4 2 1 Anti-Parallel APT2X60D60J 3 4 2 1 3 4 SO Parallel APT2X61D60J 2 T- 27 "UL Recognized" ISOTOP ® file # E145592 APT2X61D60J APT2X60D60J 600V 600V 60A 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers • Low Leakage Current MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2X61_60D60J UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 106°C, Duty Cycle = 0.5) 60 RMS Forward Current (Square wave, 50% duty) 90 IF(RMS) IFSM TJ,TSTG Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Amps 600 -55 to 175 Operating and StorageTemperature Range °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 60A 1.6 1.8 IF = 120A 1.9 IF = 60A, TJ = 125°C 1.4 Volts VR = 600V 250 VR = 600V, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 90 UNIT µA pF 6-2006 VF Characteristic / Test Conditions 053-6005 Rev G Symbol DYNAMIC CHARACTERISTICS Symbol APT2X61_60D60J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 60A, diF/dt = -200A/µs IF = 60A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 40 - 130 - 220 - 4 - 170 ns - 920 nC - 10 - 80 ns - 1900 nC - 38 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT .60 °C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.60 D =0.9 0.50 0.7 0.40 0.5 0.3 0.20 0.10 0 Note: PDM 0.30 t2 t 0.1 SINGLE PULSE 0.05 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 6-2006 TJ (°C) 053-6005 Rev G t1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC TC (°C) 0.159 0.255 0.186 Dissipated Power (Watts) 0.0056 0.0849 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.70 0.489 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 200 180 180 160 140 120 100 TJ = 125°C 80 TJ = 25°C 60 TJ = 150°C 40 TJ = -55°C 20 0 0 0.5 1 1.5 2 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 2500 T = 125°C J V = 400V R 2000 120A 60A 1500 1000 30A 500 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 T = 125°C J V = 400V R 120A 160 60A 140 30A 120 100 80 60 40 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 40 35 T = 125°C J V = 400V 120A R 30 25 20 60A 15 30A 10 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 120 Qrr Duty cycle = 0.5 T = 175°C J 1.0 100 trr 0.8 80 IRRM 0.6 0.4 Qrr 0.2 0.0 APT2X61_60D60J 20 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) trr trr, REVERSE RECOVERY TIME (ns) 200 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) TYPICAL PERFORMANCE CURVES 60 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 600 500 400 6-2006 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-6005 Rev G CJ, JUNCTION CAPACITANCE (pF) 700 APT2X61_60D60J Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 053-6005 Rev G 6-2006 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Anode 2 APT2X60D60J Parallel APT2X61D60J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.