VS-FCSP1H40LTR www.vishay.com Vishay Semiconductors FlipKY®, 1 A Chip Scale Package Schottky Barrier Rectifier FEATURES • • • • • • • Super low profile (0.6 mm) One-fifth footprint of SMA Ultralow VF per footprint area Low leakage Low thermal resistance Available tested on tape and reel Compliant to RoHS Directive 2002/95/EC APPLICATIONS • • • • • FlipKY® Reverse polarity protection Current steering Freewheeling Flyback Oring DESCRIPTION Vishay’s FlipKY® product family utilizes wafer level chip scale packaging to deliver Schottky diodes with the lowest VF to PCB footprint area in industry. The four bump 1.5 mm x 1.5 mm devices can deliver up to 1 A and occupy only 2.3 mm2 of board space. The anode and cathode connections are made through solder bump pads on one side of the silicon enabling designers to strategically place the diodes on the PCB. This design not only minimizes board space but also reduces thermal resistance and inductance, which can improve overall circuit efficiency. PRODUCT SUMMARY IF(AV) 1A VR 40 V VF at IF 0.42 V IRM max. at 25 °C 15 μA IRM max. at 125 °C 4 mA TJ max. 150 °C EAS 10 mJ Typical applications include hand-held, portable equipment such as cell phones, MP3 players, bluetooth, GPS, PDAs, and portable hard disk drives where space savings and performance are crucial. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) Rectangular waveform IFSM VF MAX. UNITS 40 V 1 A 250 1 Apk, TJ = 125 °C TJ 0.42 V - 55 to 150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage Revision: 04-Jul-11 SYMBOL VR VRWM VS-FCSP1H40LTR UNITS 40 V Document Number: 94493 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FCSP1H40LTR www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES IF(AV) 50 % duty cycle at TPCB = 117 °C, rectangular waveform 1.0 Maximum peak one cycle non-repetitive surge current at 25 °C 250 IFSM Following any rated load condition and with rated VRRM applied Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 10 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2.0 A Maximum average forward current 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse UNITS A 21 ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 2A 1A TJ = 125 °C 2A VR = Rated VR TJ = 25 °C Maximum reverse leakage current See fig. 2 IRM (1) TJ = 125 °C Maximum junction capacitance CT Maximum voltage rate of charge dV/dt TYP. MAX. 0.48 0.52 0.54 0.59 0.38 0.42 0.48 0.52 3 15 VR = 20 V 0.5 1 VR = 10 V 0.2 0.5 VR = 5 V 0.15 0.3 VR = Rated VR 2.5 4 VR = 20 V 0.9 2 VR = 10 V 0.6 1.5 VR = 5 V 0.5 1 UNITS V μA mA VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C - 160 pF Rated VR - 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Typical thermal resistance, junction to PCB Maximum thermal resistance, junction to ambient RthJL (2) TEST CONDITIONS DC operation VALUES UNITS - 55 to 150 °C 40 °C/W RthJA 62 Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 04-Jul-11 Document Number: 94493 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FCSP1H40LTR www.vishay.com Vishay Semiconductors 160 Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) 10 TJ = 150 °C 1.0 TJ = 125 °C TJ = 25 °C D = 3/4 D = 1/2 D = 1/3 D = 1/4 D = 1/5 DC 140 120 Square wave (D = 0.50) 80 % VR applied 100 See note (1) 80 0.1 0.2 0.3 0.5 0.4 0.7 0.6 0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 100 0.7 10 0.6 Average Power Loss (W) IR - Reverse Current (mA) VFM - Forward Voltage Drop (V) TJ = 150 °C 1.0 TJ = 125 °C 0.1 TJ = 100 °C TJ = 75 °C 0.01 TJ = 50 °C 0.001 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.5 RMS limit 0.4 0.3 DC 0.2 0.1 TJ = 25 °C 0.0001 0 5 10 15 20 25 30 35 0 40 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Fig. 5 - Forward Power Loss Characteristics (Per Leg) 160 1000 At any rated load condition and with rated VRRM applied following surge TJ = 25 °C 140 IFSM - Non-Repetitive Surge Current (A) CT - Junction Capacitance (pF) 0.2 120 100 80 100 60 40 10 0 5 10 15 20 25 30 35 40 45 10 100 1000 10 000 VR - Reverse Voltage (V) tp - Square Wave Pulse Duration (µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Fig. 6 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at 80 % VR applied Revision: 04-Jul-11 Document Number: 94493 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FCSP1H40LTR www.vishay.com Vishay Semiconductors L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 7 - Unclamped Inductive Test Circuit LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95282 Part marking information www.vishay.com/doc?95281 Packaging information www.vishay.com/doc?95062 SPICE model www.vishay.com/doc?95421 Revision: 04-Jul-11 Document Number: 94493 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products FlipKY® 1 A/1.5 A (Large Bump Pad Design) DIMENSIONS in millimeters Ball assignments 0.10 (0.004) C 2x 1.524 B 4 A 1 = Cathode 2 = Cathode 3 = Anode 4 = Anode 0.600 0.520 0.205 0.175 0.10 (0.004) C 2x 3 2 x 0.400 1.524 1.524 0.300 1 2 0.800 4x 0.395 0.355 Recommended footprint 0.800 Cathode ball 1 Cathode ball 2 0.800 Anode ball 4 Anode ball 3 4 x Ø 0.35 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Controlling dimension: millimeter Document Number: 95282 Revision: 02-Apr-08 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1