CHA2093 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 2 Vg 1 Gain ( dB ) It is supplied in chip form. Main Features ¦ Broad band performance 20-30GHz ¦ 2.2dB noise figure, 20-30GHz ¦ 15dB gain, ± 0.5dB gain flatness ¦ Low DC power consumption, 50mA ¦ 20dBm 3rd order intercept point ¦ Chip size : 1.67 x 1.03 x 0.1mm 20 10 18 9 16 8 14 7 12 6 10 5 8 4 6 3 4 2 2 1 0 0 10 15 20 25 30 35 40 Frequency ( GHz ) On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol Parameter NF Noise figure, 20-30GHz G Gain ∆G Gain flatness Min 13 Typ Max Unit 2.2 3.0 dB 15 ± 0.5 dB ± 1.0 dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20933279 - 06 Oct 03 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Noise Figure ( dB ) The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. 25 50 20-30GHz Low Noise Amplifier CHA2093 Electrical Characteristics Tamb = +25°C, Vd = +4V Id=45mA Symbol Parameter Min Operating frequency range 20 G Gain (1) 13 ∆G Gain flatness (1) ± 0.5 ± 1.0 dB NF Noise figure (1) 2.2 3.0 dB VSWRin Input VSWR (1) 3.0:1 VSWRout Ouput VSWR (1) 3.0:1 Fop IP3 3rd order intercept point P1dB Id Output power at 1dB gain compression Drain bias current Typ Max Unit 30 Ghz 15 dB 20 dBm 13 dBm 50 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires , the indicated parameter values should be improved. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage 5.0 V Pin Maximum peak input power overdrive (2) +10 dBm Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA20933279 - 06 Oct 03 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2093 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Bias Conditions : Vd = +4V Id=45mA Freq MS11 PS11 MS12 PS12 MS21 PS21 MS22 PS22 GHz dB ° dB ° dB ° dB ° 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 -1.36 -1.98 -2.93 -4.5 -6.8 -10.02 -13.47 -14.68 -13.76 -12.83 -13.51 -14.3 -14.74 -14.63 -14.15 -13.71 -13.42 -13.54 -14.43 -14.48 -12.87 -8.84 -5.55 -3.72 -2.5 -1.88 -1.52 -1.32 -1.07 -0.93 -0.82 -0.68 -0.52 -0.5 -0.41 -0.37 140 121.9 101.1 77.7 50.1 16.4 -30 -86 -131 -159.2 177.8 170.9 167.2 168 163.4 155.8 145.5 124.4 100.2 56.9 5.6 -37.4 -73.3 -101.3 -123.2 -141.2 -155.7 -167.5 -177.6 172.6 164.7 157.2 149.5 142 135.3 128.4 -62.29 -58.39 -53.05 -49.08 -46.97 -44.52 -42.23 -40.43 -39.41 -38 -36.01 -34.99 -34.53 -34.46 -33.67 -33.27 -32.65 -32.6 -32.49 -31.69 -31.87 -31.22 -31.23 -32.96 -34.73 -35.69 -35.69 -37.95 -38.15 -43.41 -43.1 -43.1 -43.23 -44.08 -45.8 -45.05 -138.5 -130.1 -130.3 -146.8 -163.9 173.2 160.2 138.2 126.2 104.7 92.4 63.7 46.8 24.6 6.3 -7.6 -29.3 -51.5 -68.3 -88.8 -115.7 -140.4 -171 159.7 134.8 121.6 98 72.2 56.8 86.9 76.9 44.4 39.6 24 21 18.1 4.35 7.36 9.77 11.61 12.9 13.86 14.55 15 15.36 15.69 15.79 15.96 15.98 15.84 15.75 15.6 15.55 15.46 15.48 15.48 15.24 14.69 13.43 11.43 9.01 6.2 3.35 0.36 -2.78 -6.02 -9.59 -13.6 -18.24 -24.6 -35.19 -37.14 51.6 27.2 0.8 -26.2 -53.2 -78.7 -103.5 -127 -149.8 -171.8 165.6 144.3 122.3 102.1 80.9 60.2 40.3 18.6 -2.8 -27.3 -53 -82.2 -112.8 -141.9 -168.7 167.5 145.9 125.7 107.4 89 71.9 55.3 40.2 27.2 30.1 126.8 -16.6 -16.75 -16.67 -16.77 -17.47 -17.67 -18.06 -18.55 -18.7 -17.9 -15.62 -14.48 -13.4 -12.6 -11.67 -11.4 -11.3 -10.33 -9.98 -8.88 -7.99 -6.86 -6.35 -6.69 -7.51 -8.65 -9.92 -11.17 -12.15 -12.5 -12.27 -11.82 -10.89 -9.87 -8.91 -8.04 151.6 145.1 137.9 129.8 122.7 122.2 118.4 118.4 125.4 131.3 131.1 127 120.5 116.3 107.1 100.6 96.1 91.6 85.7 80.2 70.5 58.1 40.1 20.4 1.5 -17 -36.6 -56.5 -78.9 -103.1 -127.3 -148.5 -166.3 -179.6 167.4 156.2 Ref. : DSCHA20933279 - 06 Oct 03 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2093 Typical Results Chip Typical Response ( On wafer Sij ) : Tamb = +25°C Vd = 4V ; Id = 45mA 20 15 Gain, RLoss ( dB ) 10 5 DBS11 DBS22 Gain 0 -5 -10 -15 -20 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency ( GHz ) Gain, NF ( dB ) Typical Gain and Matching measurements on wafer. 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Gain NF Gab 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Frequency ( GHz ) Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA20933279 - 06 Oct 03 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2093 Typical Results Tamb = +25°C Vd = 4V ; Id = 45mA 16 16 14 14 12 12 10 10 8 8 6 6 4 4 Pout Gain 2 Gass (dB) Output power (dBm) F=20GHz 2 0 0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Input power (dBm) 16 16 14 14 12 12 10 10 8 8 6 6 Pout Gain 4 2 Gass (dB) Output power (dBm) F=30GHz 4 2 0 0 -3 -2 -1 0 1 2 3 4 5 6 7 Input power (dBm) Typical Output Power and Gain measurements in test jig (included losses of the jig) Ref. : DSCHA20933279 - 06 Oct 03 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2093 Typical Chip Assembly To Vd DC Drain supply feed 100pF 7034 25 50 IN OUT 100pF 100pF To Vg1 DC Gate supply feed To Vg2 DC Gate supply feed Mechanical data Ref. : DSCHA20933279 - 06 Oct 03 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2093 Chip Biasing This chip is a two stage amplifier, and flexibility is provided by the access to number of pads. The internal DC electrical schematic is given in order to use these pads in a safe way. Vd 50 25 IN OUT Vds1 Vg 1 Vds2 Vg 2 The two requirements are : N°1 : Not exceed Vds = 3.5V ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 3.5V and Id = 30mA ( Vg1=Vg2) Low Noise and high output power : Vd = 4.0V and Id = 45mA. A separate access to the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a typical current of 30mA for the output stage and 15 mA for the first stage. The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain 45 mA of current through the amplifier. Ref. : DSCHA20933279 - 06 Oct 03 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz Low Noise Amplifier CHA2093 Ordering Information Chip form : CHA2093-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20933279 - 06 Oct 03 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice