BPV22NF, BPV22NFL www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 4.5 x 5 x 6 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fast response times 94 8633 • Angle of half sensitivity: ϕ = ± 60° • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 DESCRIPTION BPV22NF is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. The lens achieves 80 % of sensitivity improvement in comparison with flat package. BPV22NFL has long leads, other specifications like BPV22NF. APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY Ira (μA) ϕ (deg) λ0.5 (nm) BPV22NF 85 ± 60 790 to 1050 BPV22NFL 85 ± 60 790 to 1050 PACKAGE FORM COMPONENT Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION PACKAGING REMARKS BPV22NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV22NFL Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view, long leads ORDERING CODE Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Thermal resistance junction/ambient Rev. 1.9, 21-Feb-12 VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Storage temperature range Soldering temperature SYMBOL Document Number: 81509 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV22NF, BPV22NFL www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION PARAMETER IF = 50 mA VF IR = 100 μA, E = 0 V(BR) Forward voltage Breakdown voltage MIN. TYP. MAX. UNIT 1 1.3 V 60 V VR = 10 V, E = 0 Iro 2 VR= 0 V, f = 1 MHz, E = 0 CD 70 pF VR= 12 V, f = 1 MHz RS 400 Ω Reverse dark current Diode capacitance SYMBOL Serial resistance mW/cm2, λ = 950 nm 30 nA Open circuit voltage Ee = 1 Vo 370 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 80 μA Reverse light current Ee = 1 mW/cm2, λ = 870 nm, 85 μA Temperature coefficient of Ira Ee = 1 mW/cm2, λ = 950 nm, VR = 10 V TKIra 0.1 %/K VR = 5 V, λ = 870 nm s(λ) 0.57 A/W VR = 5 V, λ = 950 nm s(λ) 0.6 A/W Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 940 nm λ0.5 790 to 1050 nm η 90 % VR = 5 V Absolute spectral sensitivity Range of spectral bandwidth λ = 950 nm Quantum efficiency 55 Ira Noise equivalent power VR = 10 V, λ = 950 nm NEP Detectivity VR = 10 V, λ = 950 nm D* 6 x 1012 cm√Hz/W Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns VR = 12 V, RL = 1 kΩ, λ = 870 nm fc 4 MHz VR = 12 V, RL = 1 kΩ, λ = 950 nm fc 1 MHz Cut-off frequency 4x 10-14 W/√ Hz BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.9, 21-Feb-12 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81509 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV22NF, BPV22NFL www.vishay.com Vishay Semiconductors 1.2 S(λ)rel - Relative Spectral Sensivity I ra - Reverse Light Current (µA) 1000 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 0.8 0.6 0.4 0.2 0.0 750 10 1 850 Fig. 3 - Reverse Light Current vs. Irradiance 950 1050 1150 λ - Wavelength (nm) 94 8426 E e - Irradiance (mW/cm2) 94 8411 1.0 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10 ° 20 ° 30° 0.5 mW/cm2 λ = 950 nm 2 0.2 mW/cm 10 0.1 mW/cm2 0.05 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.02 mW/cm2 1 0.1 1 10 100 VR - Reverse Voltage (V) 94 8412 ϕ - Angular Displacement Srel - Relative Sensitivity I ra - Reverse Light Current (µA) 1 mW/cm2 0.6 0.4 0.2 0 94 8413 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.9, 21-Feb-12 Document Number: 81509 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV22NF, BPV22NFL www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: BPV22NF 5 ± 0.15 3.2 ± 0.2 (2.4) ± 0.2 ± 0.3 6 R 2.25 (sphere) 18.8 ± 0.5 8.6 ± 0.3 < 0.7 2.5 4.5 + 0.1 - 0.3 0.65 + 0.1 - 0.2 0.1 3.4 +- 0.3 Area not plane A C 0.45 + 0.2 - 0.1 0.4 + 0.15 2.54 nom. 1.1 technical drawings according to DIN specifications ± 0.2 Drawing-No.: 6.544-5199.01-4 Issue: 2; 19.06.01 95 11475 PACKAGE DIMENSIONS in millimeters: BPV22NFL 5 3.2 ± 0.2 (2.4) 4.5 ± 0.2 ± 0.3 R 2.2 here ) 10.8 6 5 (sp 32.5 ± 0.5 ± 0.3 < 0.7 2.5 ± 0.15 + 0.1 - 0.3 0.75 - 0.12 0.1 3.4 +- 0.3 Area not plane A C 0.63 ± 0.1 2.54 nom. 0.4 ± 0.1 1.1 ± 0.2 technical drawings according to DIN specifications Drawing-No.: 6.544-5236.01-4 Issue: 2; 07.07.97 96 12205 Rev. 1.9, 21-Feb-12 Document Number: 81509 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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