AP6928GMT-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE D1 ▼ Simple Drive Requirement ▼ Easy for Synchronous Buck CH-1 G1 Converter Application ▼ RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description S2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. BVDSS 30V RDS(ON) 8.5mΩ ID BVDSS RDS(ON) ID 48A 30V 2.6mΩ 105A G2 S2 S2 S2 G2 S2 S2 S2 S1/D2 The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. G1 D1 D1 D1 D1 G1 D1 D1 D1 PMPAK® 5x6 Absolute Maximum Ratings Symbol Parameter Units Rating CH-1 CH-2 VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage +20 +12 V ID@TC=25℃ Continuous Drain Current (Chip Limited) ID@TA=25℃ ID@TA=70℃ 48 105 A 3 15 31 A 3 12 24.8 A 40 60 A 3.13 3.9 W Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rating Parameter CH-1 CH-2 Units Rthj-c Maximum Thermal Resistance, Junction-case 4 2.8 ℃/W Rthj-a 3 Maximum Thermal Resistance, Junction-ambient 40 32 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient4 70 60 ℃/W Data & specifications subject to change without notice 1 201112121 AP6928GMT-HF o CH-1 Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=12A - 7 8.5 mΩ VGS=4.5V, ID=8A - 10 12.5 mΩ 1.1 1.5 3 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=12A - 36 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=12A - 6.5 10.4 nC Qgs Gate-Source Charge VDS=15V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC td(on) Turn-on Delay Time VDS=15V - 7.5 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 18 - ns tf Fall Time VGS=10V - 7 - ns Ciss Input Capacitance VGS=0V - 600 960 pF VDS=15V - 220 - pF Coss Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Rg Gate Resistance f=1.0MHz - 2.7 5.4 Ω Min. Typ. IS=12A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=12A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC 2 AP6928GMT-HF o CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=20A - 2.1 2.6 mΩ VGS=4.5V, ID=12A - 2.9 3.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.6 3 V gfs Forward Transconductance VDS=10V, ID=20A - 50 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 500 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA Qg Total Gate Charge ID=20A - 67 107 nC Qgs Gate-Source Charge VDS=15V - 18 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 31 - nC td(on) Turn-on Delay Time VDS=15V - 21 - ns tr Rise Time ID=1A - 12.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 100 - ns tf Fall Time VGS=10V - 42 - ns Ciss Input Capacitance VGS=0V - 9300 14880 pF Coss Output Capacitance VDS=15V - 1170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 880 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω Min. Typ. Max. Units - 0.5 0.64 V Source-Drain Diode Symbol Parameter Test Conditions 2 VSD Diode+Schottky Forward On Voltage IS=1A, VGS=0V trr Body Diode+Schottky Reverse Recovery Time IS=10A, VGS=0V, - 40 - ns Qrr Body Diode+Schottky Reverse Recovery Charge dI/dt=100A/µs - 40 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec. 2 4.Surface mounted on 1 in copper pad of FR4 board, on steady-state THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP6928GMT-HF Channel-1 50 40 10V 7.0V 6.0V 5.0V V G = 4.0V ID , Drain Current (A) 40 10V 7.0V 6.0V 5.0V V G =4.0V o T A =150 C ID , Drain Current (A) T A =25 o C 30 20 30 20 10 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 11 I D =12A V G =10V I D =8A Normalized RDS(ON) T A =25 o C RDS(ON) (mΩ) 9 1.6 1.2 7 0.8 0.4 5 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 20 I D =1mA Normalized VGS(th) (V) 1.6 IS(A) 15 T j =150 o C T j =25 o C 10 1.2 0.8 5 0.4 0 0.0 0 0 0 1 1 1 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP6928GMT-HF Channel-1 10 1000 8 800 6 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 1200 I D =12A V DS =15V 600 C iss 4 400 2 C oss C rss 200 0 0 0 2 4 6 8 10 12 1 14 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 100us 10 ID (A) 1ms 10ms 1 100ms 1s 0.1 DC T A =25 o C Single Pulse Normalized Thermal Response (Rthja) Duty factor = 0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x R thja + T a Rthja=70 oC/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 70 50 V DS =5V 60 ID , Drain Current (A) ID , Drain Current (A) 40 50 40 30 30 20 20 T j =150 o C 10 o T j =25 C 10 T j =-40 o C 0 0 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 12. Maximum Continuous Drain Current v.s. Case Temperature 5 AP6928GMT-HF Channel-2 160 120 10V 7.0V 6.0V 5.0V V G =4.0V 120 10V 7.0V 6.0V 5.0V V G =4.0V o T A =150 C 100 ID , Drain Current (A) ID , Drain Current (A) T A =25 o C 80 80 60 40 40 20 0 0 0 2 4 6 8 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 4 I D =20A V G =10V I D =12A T A =25 o C Normalized RDS(ON) RDS(ON) (mΩ) 4 3 3 1.6 1.2 0.8 2 0.4 2 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 20 I D =10mA 1.6 Normalized VGS(th) (V) IS(A) 16 12 T j =25 o C T j =150 o C 8 4 1.2 0.8 0.4 0 0.0 0 0 0 1 1 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP6928GMT-HF Channel-2 10 10000 8 C iss 8000 6 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 12000 I D =20A V DS =15V 6000 4 4000 2 2000 C oss C rss 0 0 0 40 80 120 1 160 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 100us Operation in this area limited by RDS(ON) ID (A) 10 10ms 100ms 1 1s 0.1 DC T A =25 o C Single Pulse Normalized Thermal Response (Rthja) Duty factor = 0.5 1ms 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x R thja + T a Rthja=60 oC/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 V DS ,Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 160 120 V DS =5V ID , Drain Current (A) ID , Drain Current (A) 100 120 80 80 60 40 40 T j =150 o C 20 o T j =25 C T j =-40 o C 0 0 1 2 3 4 0 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 12. Maximum Continuous Drain Current v.s. Case Temperature 7