CHA2293 RoHS COMPLIANT 24-30GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Typical on wafer measurements :Gain & NF It is available in chip form. Main Features Frequency range : 24-30GHz 3dB Noise Figure. 24dB gain Gain control range: 15dB Low DC power consumption, 160mA @ 5V Chip size : 2.32 X 1.23 X 0.10 mm 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Gain (dB) NF (dB) 24 25 26 27 28 29 30 Frequency (GHz) Main Characteristics Tamb. = 25°C Parameter Fop Min Operating frequency range Typ 24 Max Unit 30 GHz G Small signal gain 24 NF Noise figure 3 Gain control range with Vc variation 15 dB Bias current 160 mA Gctrl Id dB 3.5 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22937150 - 30 May 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24-30GHz LNA VGA CHA2293 Electrical Characteristics for Broadband Operation Tamb = +25°C, V5=Vd= 5V Symbol Fop G ∆G Parameter Min Operating frequency range 24 Small signal gain (1) 22 Small signal gain flatness (1) Typ dB dB NF Noise figure with Vc=1.2V 3 P1dB Output power at 1dB compression with Vc=1.2V VSWRin VSWRout Vd GHz ±1.5 50 12 30 dB Reverse isolation (1) Gain control range versus Vc Unit 24 Is Gctrl Max 3.5 15 dB 12 dBm Input VSWR (1) 4.0:1 Output VSWR (1) 2.0:1 DC voltage V5= Vd Vc -1.5 dB 5 [-0.7,+1.2] V V +1.3 Id1 Bias current (2) with Vc=1.2V 35 mA Id Bias current total (3) with Vc=1.2V 160 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjust to 35mA with Vg1. (3) With Id1=35mA, adjust Vg voltage for a total drain current around 160mA. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 5.5 V Vc Control bias voltage 1.5 V Id Drain bias current 250 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. DSCHA22937150 - 30 May 07 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz LNA VGA CHA2293 Typical on wafer Measurements Bias Conditions : V5=Vd=5V, Vg1 pour Id1=35mA, Vg=-0.3V, Vc=+1.2V Typical on-wafer Gain and Return Loss Bias Conditions : V5=Vd=5V, Vg1 pour Id1=35mA, Vg=-0.3V Control gain range versus Frequency Ref. DSCHA22937150 - 30 May 07 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz LNA VGA CHA2293 Bias Conditions : V5=Vd=5V, Vg1=Vg=-0.3V Gain versus control voltage Gain and Noise Figure versus Frequency (Vc=+1.2V) Ref. DSCHA22937150 - 30 May 07 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz LNA VGA CHA2293 In jig Measurements Bias Conditions : V5=Vd=5V, Vg1=Vg=-0.3V, Vc=+1.2V All these measurements include the losses from the jig ( about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power) Gain & Output power @ 24-30GHz Gain & Noise figure versus Vc Ref. DSCHA22937150 - 30 May 07 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz LNA VGA CHA2293 Mechanical Data and Chip Assembly Bonding pad positions Note: Supply feeds should be capacitively bypassed. 25µm diameter gold wire is recommended Bond Pad: 100 x 100 µm Ordering Information Chip form : CHA2293-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA22937150 - 30 May 07 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice