DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD37 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 1999 Nov 16 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed • High maximum operating temperature and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability k handbook, 4 columns a • Smallest surface mount rectifier outline • Shipped in 8 mm embossed tape. MAM061 Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT BYD37D − 200 V BYD37G − 400 V BYD37J − 600 V BYD37K − 800 V BYD37M − 1000 V BYD37D − 200 V BYD37G − 400 V BYD37J − 600 V BYD37K − 800 V BYD37M − 1000 V repetitive peak reverse voltage continuous reverse voltage IF(AV) average forward current Ttp = 105 °C; see Fig.2; averaged over any 20 ms period; see also Fig.6 − 1.5 A IF(AV) average forward current Tamb = 60 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 0.6 A IFRM repetitive peak forward current Ttp = 105 °C; see Fig.4 − 13 A Tamb = 60 °C; see Fig.5 − 5.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 20 A 1999 Nov 16 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL ERSM BYD37 series PARAMETER non-repetitive peak reverse avalanche energy CONDITIONS MIN. MAX. UNIT L = 120 mH; Tj = Tj max prior to surge; inductive load switched off BYD37D to J − 10 mJ BYD37K and M − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. IF = 1 A; Tj = Tj max; see Fig.8 − − 1.1 V IF = 1 A; see Fig.8 − − 1.3 V 300 − − V see Fig.7 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage CONDITIONS IR = 0.1 mA BYD37D BYD37G 500 − − V BYD37J 700 − − V BYD37K 900 − − V − 1100 − VR = VRRMmax; see Fig.9 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.9 − − 100 µA − − 250 ns − − 300 ns − 20 − pF − − 6 A/µs − − 5 A/µs BYD37M IR trr reverse current reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25A; see Fig.12 BYD37D to J BYD37K and M Cd dI R -------dt UNIT diode capacitance f = 1 MHz; VR = 0; see Fig.10 maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 BYD37D to J BYD37K and M V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 VALUE UNIT 30 K/W 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. 1999 Nov 16 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series GRAPHICAL DATA MGA854 3 MGA855 0.8 handbook, halfpage handbook, halfpage I F(AV) (A) I F(AV) (A) 0.6 2 0.4 1 0.2 0 0 0 100 0 200 Ttp (o C) 100 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). T amb ( o C) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MLB268 16 handbook, full pagewidth I FRM (A) δ = 0.05 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 Ttp = 105 °C; Rth j-tp = 30 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1999 Nov 16 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series MLB267 6 handbook, full pagewidth I FRM δ = 0.05 (A) 4 0.1 0.2 2 0.5 1 0 10 2 10 1 1 10 2 10 10 3 10 4 t p (ms) Tamb = 60 °C; Rth j-a = 150 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGA869 2.4 a=3 P (W) MGA861 200 handbook, halfpage handbook, halfpage 2.5 2 1.57 Tj ( oC) 1.42 1.6 100 0.8 D 0 0 0.8 0 1.6 0 G 400 I F(AV) (A) J K 800 M VR (V) 1200 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.6 Solid line = VR. Dotted line = VRRM; δ = 0.5. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1999 Nov 16 Fig.7 5 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series MGA850 6 MGA853 3 10halfpage handbook, handbook, halfpage IR (µA) IF (A) 4 102 2 10 0 1 0 1 2 3 V F (V) 100 0 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Fig.9 Forward current as a function of forward voltage; maximum values. 200 T j ( o C) Reverse current as a function of junction temperature; maximum values. MGA862 102 handbook, halfpage 50 Cd (pF) 4.5 10 50 D, G, J K, M 1 1 10 2.5 102 V R (V) 1.25 103 MSB213 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 1999 Nov 16 Fig.11 Printed-circuit board for surface mounting. 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers handbook, full pagewidth BYD37 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. IF halfpage ndbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1999 Nov 16 7 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k a (2) D1 L L H DIMENSIONS (mm are the original dimensions) UNIT D D1 H L mm 2.1 2.0 2.0 1.8 3.7 3.3 0.3 D 0 1 2 mm scale Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD87 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Nov 16 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series NOTES 1999 Nov 16 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series NOTES 1999 Nov 16 10 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series NOTES 1999 Nov 16 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135002/03/pp12 Date of release: 1999 Nov 16 Document order number: 9397 750 06274