Diodes DMN2300UFB4-7B 20v n-channel enhancement mode mosfet Datasheet

A Product Line of
Diodes Incorporated
DMN2300UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V(BR)DSS
RDS(on)
20V
175mΩ @ VGS = 4.5V
240mΩ @ VGS = 2.5V
360mΩ @ VGS = 1.8V
•
•
•
•
•
•
•
•
ID max
TA = 25°C
(Notes 4)
1.30A
1.11A
0.91A
2
Footprint of just 0.6mm – thirteen times smaller than SOT23
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2KV
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
Case: DFN1006H4-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
•
•
Load switch
•
Drain
DFN1006H4-3
Body
Diode
Gate
S
D
G
Bottom View
ESD PROTECTED TO 2kV
Top View
Internal Schematic
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMN2300UFB4-7B
Notes:
Marking
NL
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2300UFB4-7B
NL
NL = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMN2300UFB4
Document number: DS35269 Rev. 2 - 2
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May 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB4
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4)
Steady
State
Unit
V
V
IDM
Value
20
±8
1.3
0.96
6
Symbol
PD
RθJA
TJ, TSTG
Value
0.47
258
-55 to +150
Unit
W
°C/W
°C
TA = 25°C
TA = 85°C
ID
Pulsed Drain Current (Note 5)
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1
10
V
μA
μA
VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
0.7
0.95
175
240
360
1.2
V
Static Drain-Source On-Resistance
0.45
40
-
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 300mA
VGS = 2.5V, ID = 250mA
VGS = 1.8V, ID = 100mA
VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V,
ID = 1A
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
6. Short duration pulse test used to minimize self-heating effect.
DMN2300UFB4
Document number: DS35269 Rev. 2 - 2
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A Product Line of
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DMN2300UFB4
2.0
2.0
VGS = 4.5V
VDS = 5V
VGS = 2.5V
VGS = 1.8V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 2.0V
1.5
VGS = 1.5V
1.0
0.5
1.5
1.0
TA = 150°C
0.5
TA = 125°C
VGS = 1.2V
TA = 85°C
TA = 25°C
TA = -55°C
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.4
0.3
0.2
VGS = 2.5V
VGS = 4.5V
0.1
0
0
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
VGS = 2.5V
ID = 500mA
1.2
1.0
0.8
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN2300UFB4
Document number: DS35269 Rev. 2 - 2
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0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
0.8
VGS = 4.5V
0.6
0.4
TA = 125°C
TA = 150°C
0.2
TA = 85°C
TA = 25°C
TA = -55°C
0
0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
ID = 1.0A
0.6
-50
0
2
1.6
1.4
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
0.25
0.5 0.75 1
1.25 1.5 1.75
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2
0.8
0.6
0.4
VGS = 2.5V
ID = 500mA
0.2
VGS = 4.5V
ID = 1.0A
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
May 2011
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A Product Line of
Diodes Incorporated
DMN2300UFB4
2.0
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.2
IS, SOURCE CURRENT (A)
1.0
ID = 1mA
0.8
0.6
ID = 250µA
0.4
1.6
1.2
TA = 25°C
0.8
0.4
0.2
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
100,000
1,000
IGSS, LEAKAGE CURRENT (nA)
IDSS, LEAKAGE CURRENT (nA)
T A = 125°C
100
T A = 85°C
10
TA = 25°C
TA = -55°C
1
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Leakage Current
vs. Drain-Source Voltage
10,000
20
TA = 150°C
T A = 125°C
1,000
T A = 85°C
TA = 25°C
100
TA = -55°C
10
1
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Fig.10 Leakage Current vs. Gate-Source Voltage
VGS, GATE-SOURCE VOLTAGE (V)
8
VDS = 15V
ID = 1A
6
4
2
0
0
0.5
1
1.5
2
2.5
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMN2300UFB4
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r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA (t) = r(t) * R θJA
RθJA = 253°C/W
D = 0.02
0.01 D = 0.01
P(pk)
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
t1
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
A
DFN1006H4-3
Dim Min
Max
Typ
A
0.40
⎯
⎯
A1
0
0.05 0.03
b1
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
0.95 1.05 1.00
E
0.55 0.65 0.60
e
0.35
⎯
⎯
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
A1
D
b1
E
e
b2
L2
L3
L1
Suggested Pad Layout
C
X1
X
G2
G1
Y
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
Z
DMN2300UFB4
Document number: DS35269 Rev. 2 - 2
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A Product Line of
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DMN2300UFB4
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Copyright © 2011, Diodes Incorporated
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DMN2300UFB4
Document number: DS35269 Rev. 2 - 2
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