A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C (Notes 4) 1.30A 1.11A 0.91A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23 0.4mm profile – ideal for low profile applications Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2KV Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) • • Load switch • Drain DFN1006H4-3 Body Diode Gate S D G Bottom View ESD PROTECTED TO 2kV Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 3) Part Number DMN2300UFB4-7B Notes: Marking NL Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DMN2300UFB4-7B NL NL = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMN2300UFB4 Document number: DS35269 Rev. 2 - 2 1 of 6 www.diodes.com May 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Steady State Unit V V IDM Value 20 ±8 1.3 0.96 6 Symbol PD RθJA TJ, TSTG Value 0.47 258 -55 to +150 Unit W °C/W °C TA = 25°C TA = 85°C ID Pulsed Drain Current (Note 5) A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1 10 V μA μA VGS = 0V, ID = 10μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 0.7 0.95 175 240 360 1.2 V Static Drain-Source On-Resistance 0.45 40 - VDS = VGS, ID = 250μA VGS = 4.5V, ID = 300mA VGS = 2.5V, ID = 250mA VGS = 1.8V, ID = 100mA VDS = 3V, ID = 30mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 64.3 6.1 4.5 70 1.6 0.2 0.2 3.5 2.8 38 13 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ mS V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 6. Short duration pulse test used to minimize self-heating effect. DMN2300UFB4 Document number: DS35269 Rev. 2 - 2 2 of 6 www.diodes.com May 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 2.0 2.0 VGS = 4.5V VDS = 5V VGS = 2.5V VGS = 1.8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V 1.5 VGS = 1.5V 1.0 0.5 1.5 1.0 TA = 150°C 0.5 TA = 125°C VGS = 1.2V TA = 85°C TA = 25°C TA = -55°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.4 0.3 0.2 VGS = 2.5V VGS = 4.5V 0.1 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA 1.2 1.0 0.8 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2300UFB4 Document number: DS35269 Rev. 2 - 2 3 of 6 www.diodes.com 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 0.8 VGS = 4.5V 0.6 0.4 TA = 125°C TA = 150°C 0.2 TA = 85°C TA = 25°C TA = -55°C 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 1.0A 0.6 -50 0 2 1.6 1.4 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.25 0.5 0.75 1 1.25 1.5 1.75 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 2 0.8 0.6 0.4 VGS = 2.5V ID = 500mA 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature May 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 2.0 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 0.6 ID = 250µA 0.4 1.6 1.2 TA = 25°C 0.8 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 100,000 1,000 IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) T A = 125°C 100 T A = 85°C 10 TA = 25°C TA = -55°C 1 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Leakage Current vs. Drain-Source Voltage 10,000 20 TA = 150°C T A = 125°C 1,000 T A = 85°C TA = 25°C 100 TA = -55°C 10 1 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig.10 Leakage Current vs. Gate-Source Voltage VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2300UFB4 Document number: DS35269 Rev. 2 - 2 3 4 of 6 www.diodes.com May 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 253°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions A DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN2300UFB4 Document number: DS35269 Rev. 2 - 2 5 of 6 www.diodes.com May 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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