Spec. No. : C328S3 Issued Date : 2009.09.25 Revised Date : 2010.10.21 Page No. : 1/6 CYStech Electronics Corp. High –speed double diode BAV99S3 Description The BAV99S3 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-323 plastic SMD package. Equivalent Circuit Outline BAV99S3 2 SOT-323 1 Common connection 3 1：Anode 2：Cathode 3：Common connection Anode Cathode Features • Small plastic SMD package • High switching speed: max. 4ns • Continuous reverse voltage: max. 100V • Repetitive peak reverse voltage: max. 110V • Repetitive peak forward current: max. 450mA. • Pb-free package Applications • High-speed switching in thick and thin-film circuits. BAV99S3 CYStek Product Specification Spec. No. : C328S3 Issued Date : 2009.09.25 Revised Date : 2010.10.21 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃, each diode, unless otherwise noted Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current(single diode loaded) Continuous forward current(double diode loaded) Repetitive peak forward current Average rectified forward current (Note 1) (averaged over any 20ms period) Non-repetitive peak forward current @square wave, Tj=125℃ prior to surge t=1μs t=1ms t=1s Total power dissipation(Note 1) Operating Junction Temperature Range Storage Temperature Range Symbol VRRM VR Max 110 100 215 125 450 Unit V V IFRM Min - IF(AV) - 715 mA - 2 1 0.5 200 +150 +150 A A A mW °C °C IF IFSM Ptot Tj Tstg -65 -65 mA mA Note 1: Device mounted on an FR-5 PCB with area measuring 1.0 × 0.75 × 0.062 in. Electrical Characteristics @ TA=25℃, each diode, unless otherwise specified Parameters Symbol Conditions Min Typ. - - - - - IF=1mA IF=10mA IF=50mA IF=150mA VR=100V VR=25V,Tj=150℃ VR=100V,Tj=150℃ Forward voltage VF Reverse current IR Diode capacitance Cd Reverse recovery time trr Forward recovery voltage Vfr VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100Ω, measured at IR=1mA when switched from IF=10mA tr=20ns Max 715 855 1 1.25 2.5 30 50 Unit mV mV V V - 1.5 pF - - 4 ns - - 1.75 V μA Thermal Characteristics Symbol Parameter Conditions Value Rth, j-a thermal resistance from junction to ambient Note 1 625 Unit ℃/W Note 1: Device mounted on an FR-5 PCB with area measuring 1.0 × 0.75 × 0.062 in. BAV99S3 CYStek Product Specification Spec. No. : C328S3 Issued Date : 2009.09.25 Revised Date : 2010.10.21 Page No. : 3/6 CYStech Electronics Corp. Ordering Information Device Package SOT-323 (Pb-free) BAV99S3 Shipping Marking 3000 pcs / Tape & Reel A7 Characteristic Curves Forward Current vs Forward Voltage Forward Current vs Ambient Temperature 225 250 225 single diode loaded 200 Forward Current---IF(mA) Forward Current---IF(mA) 250 275 175 double diode loaded 150 125 100 75 50 200 175 150 125 100 75 50 25 25 0 0 0 50 100 150 0 200 0.2 0.4 0.6 0.8 1 Forward Voltage---VF(V) Ambient Temperature---Ta(℃) Non-repetitive peak forward current vs pulse duration 0.7 Diode Capacitance---CD(pF) Non-repetitive peak forward current---IFSM(A) 1.4 Diode Capacitance vs Reverse Voltage 100 10 1 0.1 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 1000 Pulse Duration---tp(μs) BAV99S3 1.2 10000 0 2 4 6 8 10 12 14 16 Reverse Voltage---VR(V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C328S3 Issued Date : 2009.09.25 Revised Date : 2010.10.21 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BAV99S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C328S3 Issued Date : 2009.09.25 Revised Date : 2010.10.21 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BAV99S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C328S3 Issued Date : 2009.09.25 Revised Date : 2010.10.21 Page No. : 6/6 SOT-323 Dimension 3 Marking: A Q A1 1 C L4_ A7 Lp 2 detail Z bp e1 W B e E D A Z Style:Pin.1. Anode 2. Cathode 3.Common Connection θ He 0 v A 3-Lead SOT-323 Plastic Surface Mounted Package. CYStek Package Code: S3 2 mm 1 scale Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BAV99S3 CYStek Product Specification