Low Noise Transistors BC549B,C BC550B,C NPN Silicon MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector–Emitter Voltage VCEO 30 45 Vdc Collector–Base Voltage VCBO 30 50 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 30 45 — — — — 30 50 — — — — 5.0 — — Vdc — — — — 15 5.0 nAdc µAdc — — 15 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CEO BC549B,C BC550B,C V(BR)CBO BC549B,C BC550B,C Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125°C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 February, 2001 – Rev. 1 Vdc 1 Vdc Publication Order Number: BC549B/D BC549B,C BC550B,C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 100 100 200 420 150 270 290 500 — — 450 800 — — — 0.075 0.3 0.25 0.25 0.6 0.6 — 1.1 — — — 0.55 0.52 0.55 0.62 — — 0.7 fT — 250 — MHz Ccbo — 2.5 — pF 240 450 330 600 500 900 — — 0.6 — 2.5 10 ON CHARACTERISTICS DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) VCE(sat) Base–Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = 10 µAdc, VCE = 5.0 Vdc) (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) — Vdc Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe BC549B/BC550B BC549C/BC550C Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) dB NF1 NF2 NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 µs – Duty cycle = 2%. RS — in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC549B,C BC550B,C 1.0 VCE = 10 V TA = 25°C 1.5 0.9 1.0 0.8 0.6 0.4 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 VCE(sat) @ IC/IB = 10 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 0 0.1 100 200 Figure 2. Normalized DC Current Gain 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 Figure 3. “Saturation” and “On” Voltages 10 400 300 7.0 100 80 60 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25°C 40 30 TA = 25°C Cib 5.0 3.0 Cob 2.0 20 0.5 0.7 1.0 2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 1.0 0.4 50 0.6 1.0 Figure 4. Current–Gain — Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 0.7 0.2 0.3 0.2 0.2 f T, CURRENT-GAIN TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25°C 140 130 120 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 10 20 40 BC549B,C BC550B,C PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 17: PIN 1. 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